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公开(公告)号：US09029921B2
公开(公告)日：2015-05-12
申请号：US14158599
申请日：2014-01-17
Applicant: STMicroelectronics International N.V.
Inventor： Alexei Ankoudinov , Vladimir Rodov
IPC: H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L29/74 , H01L27/08 , H01L29/861
CPC classification number: H01L29/7412 , H01L27/0811 , H01L27/0814 , H01L29/861
Abstract: A two terminal device which can be used for the rectification of the current. Internally it has a regenerative coupling between MOS gates of opposite type and probe regions. This regenerative coupling allows to achieve performance better than that of ideal diode.
Abstract translation: 可用于整流电流的二端装置。 在内部，它具有相反类型的MOS栅极和探针区域之间的再生耦合。 这种再生耦合可以实现比理想二极管更好的性能。
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公开(公告)号：US20130328113A1
公开(公告)日：2013-12-12
申请号：US13803881
申请日：2013-03-14
Applicant: STMicroelectronics International N.V.
Inventor： Alexei Ankoudinov , Vladimir Rodov
CPC classification number: H01L29/78 , H01L27/0817 , H01L29/0646 , H01L29/66075 , H01L29/66477 , H01L29/7802 , H01L29/861
Abstract: A rectifier building block has four electrodes: source, drain, gate and probe. The main current flows between the source and drain electrodes. The gate voltage controls the conductivity of a narrow channel under a MOS gate and can switch the RBB between OFF and ON states. Used in pairs, the RBB can be configured as a three terminal half-bridge rectifier which exhibits better than ideal diode performance, similar to synchronous rectifiers but without the need for control circuits. N-type and P-type pairs can be configured as a full bridge rectifier. Other combinations are possible to create a variety of devices.
Abstract translation: 整流器结构单元有四个电极：源极，漏极，栅极和探针。 主电流在源极和漏极之间流动。 栅极电压控制MOS栅极下窄通道的电导率，并可将RBB切换到ON状态和ON状态。 成对使用，RBB可以配置为三端半桥整流器，其表现优于理想的二极管性能，类似于同步整流器，但不需要控制电路。 N型和P型对可以配置为全桥整流器。 其他组合也可以创建各种设备。
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公开(公告)号：US09048308B2
公开(公告)日：2015-06-02
申请号：US13803881
申请日：2013-03-14
Applicant: STMicroelectronics International N.V.
Inventor： Alexei Ankoudinov , Vladimir Rodov
CPC classification number: H01L29/78 , H01L27/0817 , H01L29/0646 , H01L29/66075 , H01L29/66477 , H01L29/7802 , H01L29/861
Abstract: A rectifier building block has four electrodes: source, drain, gate and probe. The main current flows between the source and drain electrodes. The gate voltage controls the conductivity of a narrow channel under a MOS gate and can switch the RBB between OFF and ON states. Used in pairs, the RBB can be configured as a three terminal half-bridge rectifier which exhibits better than ideal diode performance, similar to synchronous rectifiers but without the need for control circuits. N-type and P-type pairs can be configured as a full bridge rectifier. Other combinations are possible to create a variety of devices.
Abstract translation: 整流器结构单元有四个电极：源极，漏极，栅极和探针。 主电流在源极和漏极之间流动。 栅极电压控制MOS栅极下窄通道的电导率，并可将RBB切换到ON状态和ON状态。 成对使用，RBB可以配置为三端半桥整流器，其表现优于理想的二极管性能，类似于同步整流器，但不需要控制电路。 N型和P型对可以配置为全桥整流器。 其他组合也可以创建各种设备。
