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    Method of production of image pickup device
    1.
    发明授权
    Method of production of image pickup device 失效
    图像拾取装置的制造方法

    公开(公告)号：US4380557A

    公开(公告)日：1983-04-19

    申请号：US287554

    申请日：1981-07-28

    申请人： Sachio Ishioka ,  Yasuharu Shimomoto ,  Yoshinori Imamura ,  Saburo Ataka ,  Yasuo Tanaka ,  Hirokazu Matsubara ,  Yukio Takasaki ,  Eiichi Maruyama

    发明人： Sachio Ishioka ,  Yasuharu Shimomoto ,  Yoshinori Imamura ,  Saburo Ataka ,  Yasuo Tanaka ,  Hirokazu Matsubara ,  Yukio Takasaki ,  Eiichi Maruyama

    IPC分类号： G03G5/08 ,  B05D3/02 ,  B05D3/04 ,  H01J9/233 ,  H01L21/205 ,  H01L31/04 ,  H01L31/08 ,  H01L31/10

    CPC分类号： H01J9/233

    摘要： In preparing an image pickup device by using hydrogen-containing amorphous silicon for a photoconductive layer, a hydrogen-containing amorphous silicon layer is first formed and is then heat-treated at 100.degree. to 300.degree. C. The image pickup characteristics of the amorphous silicon layer are highly improved by this heat treatment. For example, the lag and dark current are reduced and the signal current-target voltage characteristic is improved. Especially excellent improving effects can be obtained when amorphous silicon characterized in that (1) the hydrogen content is 5 to 30 atomic %, (2) the optical forbidden band gap is 1.30 to 1.95 eV and (3) in the infrared absorption spectrum, the component of a wave number of 2000 cm.sup.-1 is observed larger than the component of a wave number of 2100 cm.sup.-1 is subjected to the above-mentioned heat treatment. The adhesion to the substrate is enhanced, and good image pickup characteristics can be obtained.

    摘要翻译： 在通过使用含氢非晶硅作为光电导层制备图像拾取装置时，首先形成含氢非晶硅层，然后在100℃至300℃下进行热处理。非晶硅的图像拾取特性 通过这种热处理高度改善了层。 例如，滞后和暗电流降低，信号电流 - 目标电压特性提高。 当非晶硅的特征在于：（1）氢含量为5〜30原子％，（2）光学禁带宽为1.30〜1.95eV，（3）在红外吸收光谱中，特别优异的改善效果为 观察到比2100cm -1的波数的分量更大的波数为2000cm -1的分量进行上述热处理。 增强了与基板的粘附性，并且可以获得良好的图像拾取特性。

    Light sensitive screen
    2.
    发明授权
    Light sensitive screen 失效
    光敏屏

    公开(公告)号：US4419604A

    公开(公告)日：1983-12-06

    申请号：US257611

    申请日：1981-04-24

    申请人： Sachio Ishioka ,  Yoshinori Imamura ,  Yasuharu Shimomoto ,  Saburo Ataka ,  Yasuo Tanaka ,  Eiichi Maruyama

    发明人： Sachio Ishioka ,  Yoshinori Imamura ,  Yasuharu Shimomoto ,  Saburo Ataka ,  Yasuo Tanaka ,  Eiichi Maruyama

    IPC分类号： H01J29/45 ,  H01L21/205 ,  H01L27/146 ,  H01L31/0248 ,  H01L31/09 ,  H04N5/30 ,  H04N5/335 ,  H04N5/361 ,  H04N5/369 ,  H04N5/374

    CPC分类号： H01L31/095 ,  H01J29/456 ,  H01J9/233 ,  H01L27/14665

    摘要： Disclosed is a light sensitive screen including at least a light-transmitting conductive film and a photoconductive layer, the light-transmitting conductive film being arranged on a side of incidence of light, characterized in that the photoconductive layer is constructed of a single layer or a plurality of layers of one or more photoconductive substances, at least one of such photoconductive substance layers being formed of an amorphous silicon material which contains at least 5 atomic-% to 30 atomic-% of hydrogen, whose optical forbidden band gap is 1.65 eV to 2.25 eV and whose peak component in an infrared absorption spectrum at a wave number of 2,100 cm.sup.-1 is greater than that at a wave number of 2,000 cm.sup.-1. Various characteristics of an imaging device provided with the light sensitive screen, such as dark current, lag and after image characteristics, are improved.

    摘要翻译： 公开了一种至少包括透光导电膜和光电导层的感光屏，所述透光导电膜布置在光入射侧，其特征在于，所述光电导层由单层或 多层一层或多层感光物质，至少一层这样的光电导物质层由含有至少5原子％至30原子％氢的非晶硅材料形成，其光学禁带宽为1.65eV至 2.25eV，其波数为2100cm -1的红外吸收光谱中的峰分量大于2000cm -1的波数时的峰分量。 提供了诸如暗电流，滞后和后图像特性的光敏屏幕的成像装置的各种特性得到改善。

    Electrophotographic member with .alpha.-Si layers
    3.
    发明授权
    Electrophotographic member with .alpha.-Si layers 失效
    具有α-Si层的电子照相元件

    公开(公告)号：US4378417A

    公开(公告)日：1983-03-29

    申请号：US254294

    申请日：1981-04-15

    申请人： Eiichi Maruyama ,  Sachio Ishioka ,  Yoshinori Imamura ,  Hirokazu Matsubara ,  Yasuharu Shimomoto ,  Shinkichi Horigome ,  Yoshio Taniguchi

    发明人： Eiichi Maruyama ,  Sachio Ishioka ,  Yoshinori Imamura ,  Hirokazu Matsubara ,  Yasuharu Shimomoto ,  Shinkichi Horigome ,  Yoshio Taniguchi

    IPC分类号： G03G5/08 ,  G03G5/082 ,  H01L21/205 ,  H01L31/08

    CPC分类号： G03G5/08235 ,  G03G5/08221

    摘要： In an electrophotographic member employing an amorphous silicon photoconductive layer, a part which is at least 10 nm thick inwardly of the amorphous silicon layer from the surface (or interface) of the amorphous silicon layer is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..cm. The electrophotographic member exhibits a satisfactory resolution and good dark-decay characteristics. Further, a region which has an optical forbidden band gap narrower than that of the amorphous silicon forming the surface (or interface) region is disposed within the amorphous silicon layer to a thickness of at least 10 nm, whereby the sensitivity of the electrophotographic member to longer wavelengths of light can be enhanced.

    摘要翻译： 在采用非晶硅光电导层的电子照相构件中，从非晶硅层的表面（或界面）向内至少10nm厚的非晶硅层的部分由非晶硅制成，该非晶硅具有光学禁带隙 至少1.6eV，电阻率至少为1010欧米加。 电子照相成像显示出令人满意的分辨率和良好的暗衰变特性。 此外，具有窄于形成表面（或界面）区域的非晶硅的光学禁止带隙的区域设置在至少10nm的厚度的非晶硅层内，由此将电子照相构件的灵敏度设置为 可以增加更长波长的光。

    Photoelectric conversion device and method of producing the same
    5.
    发明授权
    Photoelectric conversion device and method of producing the same 失效
    光电转换装置及其制造方法

    公开(公告)号：US4405879A

    公开(公告)日：1983-09-20

    申请号：US246588

    申请日：1981-03-23

    申请人： Saburo Ataka ,  Yoshinori Imamura ,  Yasuo Tanaka ,  Hirokazu Matsubara ,  Eiichi Maruyama

    发明人： Saburo Ataka ,  Yoshinori Imamura ,  Yasuo Tanaka ,  Hirokazu Matsubara ,  Eiichi Maruyama

    IPC分类号： H01J9/233 ,  H01J29/45 ,  B05D1/36 ,  H01J31/38

    CPC分类号： H01J29/456 ,  H01J9/233

    摘要： There is disclosed a photoelectric conversion device comprising a transparent substrate; a transparent conductive film formed on said substrate; a photoconductive layer formed of hydrogenated amorphous silicon as an indispensable component and deposited on said transparent conductive film; and a chalcogen glass film formed on said photoconductive layer, wherein said chalcogen glass film includes at least a chalcogen glass layer formed in an atmosphere of inert gas kept at 1.5.times.10.sup.-2 to 1.5.times.10.sup.-1 Torr. As chalcogen glass is preferably used Sb.sub.2 S.sub.3, As.sub.2 S.sub.3, As.sub.2 Se.sub.3 or Sb.sub.2 Se.sub.3. The chalcogen glass film may be a composite film consisting of plural component layers. This invention is very useful to reduce dark current in an image pickup tube and to prevent image inversion in the image pickup tube.

    摘要翻译： 公开了一种包括透明基板的光电转换装置; 形成在所述基板上的透明导电膜; 由氢化非晶硅作为不可缺少的成分形成并沉积在所述透明导电膜上的光电导层; 以及形成在所述光电导层上的硫属玻璃膜，其中所述硫属玻璃膜至少包含在保持在1.5×10 -2至1.5×10 -1乇的惰性气体气氛中形成的至少一种硫族化合物玻璃层。 作为硫属玻璃，优选使用Sb2S3，As2S3，As2Se3或Sb2Se3。 硫属玻璃膜可以是由多个成分层构成的复合膜。 本发明对于降低图像拾取管中的暗电流并且防止图像拾取管中的图像反转非常有用。

    Photoelectric device
    6.
    发明授权
    Photoelectric device 失效
    光电器件

    公开(公告)号：US4556816A

    公开(公告)日：1985-12-03

    申请号：US510910

    申请日：1983-07-05

    申请人： Yoshinori Imamura ,  Saburo Ataka ,  Yukio Takasaki ,  Yasuo Tanaka ,  Tadaaki Hirai ,  Eiichi Maruyama

    发明人： Yoshinori Imamura ,  Saburo Ataka ,  Yukio Takasaki ,  Yasuo Tanaka ,  Tadaaki Hirai ,  Eiichi Maruyama

    IPC分类号： H01J29/45 ,  H01L31/0248 ,  H01L31/09 ,  H04N5/30 ,  H04N5/335 ,  H04N5/361 ,  H04N5/369 ,  H01J31/00 ,  H01J31/26

    CPC分类号： H01L31/095 ,  H01J29/456 ,  H01J9/233

    摘要： Disclosed is a photoelectric device having at least a signal electrode, and an amorphous photoconductor layer whose principal constituent is silicon and which contains hydrogen as an indispensable constituent element, the amorphous photoconductor layer being disposed in adjacency to the signal electrode, characterized by comprising a thin layer interposed between the signal electrode and the amorphous photoconductor layer, the thin layer being made of an inorganic material whose principal constituent is at least one compound selected from the group consisting of oxides of at least one element selected from the group that consists of Si, Ti, Al, Mg, Ba, Ta, Bi, V, Ni, Th, Fe, La, Be, Sc and Co, nitrides of at least one element selected from the group that consists of Ga, Si, Mg, Te, Hf, Zr, Nb and B, and halides of at least one element selected from the group that consists of Na, Mg, Li, Ba, Ca and K.

    摘要翻译： 公开了至少具有信号电极的光电器件和主要成分为硅并且含有氢作为不可或缺的构成元件的非晶质感光体层，非晶体感光体层与信号电极相邻设置，其特征在于，包括薄的 层，其被设置在信号电极和非晶体感光体层之间，薄层由主要成分为选自由Si组成的组中的至少一种元素的氧化物组成的组中的至少一种化合物的无机材料制成， Ti，Al，Mg，Ba，Ta，Bi，V，Ni，Th，Fe，La，Be，Sc和Co，选自由Ga，Si，Mg，Te，Hf组成的组中的至少一种元素的氮化物 ，Zr，Nb和B以及选自由Na，Mg，Li，Ba，Ca和K组成的组中的至少一种元素的卤化物。

    Solid-state imaging device
    7.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：US4360821A

    公开(公告)日：1982-11-23

    申请号：US66230

    申请日：1979-08-13

    申请人： Toshihisa Tsukada ,  Eiichi Maruyama ,  Toru Baji ,  Saburo Ataka ,  Yoshinori Imamura ,  Akira Sasano ,  Masaharu Kubo ,  Norio Koike ,  Shusaku Nagahara

    发明人： Toshihisa Tsukada ,  Eiichi Maruyama ,  Toru Baji ,  Saburo Ataka ,  Yoshinori Imamura ,  Akira Sasano ,  Masaharu Kubo ,  Norio Koike ,  Shusaku Nagahara

    IPC分类号： H01L27/146 ,  H01L27/14

    CPC分类号： H01L27/14665

    摘要： In a solid-state imaging device having a plurality of photosensitive portions and a semiconductor substrate which includes at least scanning means for scanning the photosensitive portions, the photosensitive portions including a layer of a photosensitive material overlying the semiconductor substrate and a transparent electrically conductive film overlying the photosensitive material layer; a solid-state imaging device characterized in that the photosensitive material is an amorphous material whose indispensable constituent is silicon and which contains hydrogen. The hydrogen content of the photosensitive material is preferably 5 atomic-% to 30 atomic-%, especially 10 atomic-% to 25 atomic-%.

    摘要翻译： 在具有多个感光部分的固态成像装置和至少包括用于扫描感光部分的扫描装置的半导体衬底上，感光部分包括覆盖在半导体衬底上的感光材料层和覆盖着透明导电膜的透明导电膜 感光材料层; 一种固态成像装置，其特征在于感光材料是不可缺少的成分是硅并且含有氢的无定形材料。 感光材料的氢含量优选为5原子％至30原子％，特别是10原子％至25原子％。

    Storage type photosensor containing silicon and hydrogen
    8.
    发明授权
    Storage type photosensor containing silicon and hydrogen 失效
    含硅和氢的存储型光电传感器

    公开(公告)号：US4255686A

    公开(公告)日：1981-03-10

    申请号：US39580

    申请日：1979-05-16

    申请人： Eiichi Maruyama ,  Yoshinori Imamura ,  Saburo Ataka ,  Kiyohisa Inao ,  Yukio Takasaki ,  Toshihisa Tsukada ,  Tadaaki Hirai

    发明人： Eiichi Maruyama ,  Yoshinori Imamura ,  Saburo Ataka ,  Kiyohisa Inao ,  Yukio Takasaki ,  Toshihisa Tsukada ,  Tadaaki Hirai

    IPC分类号： H01J29/45 ,  H01L31/0248 ,  H01J31/38

    CPC分类号： H01J29/45

    摘要： In a photosensor having at least a light-transmitting conductive layer which is arranged on the side of light incidence, and a photoconductive layer in which charges are stored in correspondence with the light incidence; a photosensor characterized in that at least a region of said photoconductive layer for storing the charges is made of an amorphous material which contains hydrogen and silicon as indispensable constituent elements thereof, in which the silicon amounts to at least 50 atomic % and the hydrogen amounts to at least 10 atomic % and at most 50 atomic %, and whose resistivity is not lower than 10.sup.10 .OMEGA..multidot.cm.

    摘要翻译： 在具有布置在光入射侧的至少一个透光导电层的光电传感器中，以及与光入射相对应地存储电荷的光电导层; 一种光电传感器，其特征在于，用于存储电荷的所述光电导层的至少一个区域由含有氢和硅作为其不可缺少的构成元素的非晶材料制成，其中硅占至少50原子％，氢相当于 至少10原子％且至多50原子％，并且其电阻率不低于1010欧米加×厘米2。

    Electrophotographic member with .alpha.-Si and H
    10.
    发明授权
    Electrophotographic member with .alpha.-Si and H 失效
    具有α-Si和H的电子照相元件

    公开(公告)号：US4377628A

    公开(公告)日：1983-03-22

    申请号：US257346

    申请日：1981-04-24

    申请人： Sachio Ishioka ,  Eiichi Maruyama ,  Yoshinori Imamura ,  Hirokazu Matsubara ,  Shinkichi Horigome

    发明人： Sachio Ishioka ,  Eiichi Maruyama ,  Yoshinori Imamura ,  Hirokazu Matsubara ,  Shinkichi Horigome

    IPC分类号： G03G5/08 ,  G03F7/20 ,  G03G5/082 ,  H01L31/08 ,  G03G5/14

    CPC分类号： G03F7/70216 ,  G03F7/707 ,  G03G5/08221 ,  G03G5/08235

    摘要： Disclosed is an electrophotographic member having an amorphous-silicon photoconductive layer, wherein the distance between a portion in which light illuminating the photoconductor is absorbed therein until its intensity decreases to 1% of that at incidence and the interface of the photoconductor opposite to the light incidence side thereof is at most 5 .mu.m, whereby the residual potential of the photoconductive layer can be reduced.That part of the photoconductive layer constituting the electrophotographic member which is at least 10 nm thick inwardly of the photoconductive layer from the surface thereof to store charges is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..multidot.cm. Further, within such photoconductive layer, a region of amorphous silicon which has an optical forbidden band gap smaller than that of the amorphous silicon forming the surface part is disposed at a thickness of at least 10 nm. By forming the region of the narrower optical forbidden band gap within the photoconductive layer in this manner, the sensitivity of the photoconductive layer to light of longer wavelengths can be enhanced.

    摘要翻译： 公开了具有非晶硅光电导层的电子照相构件，其中照射光电导体的光被吸收到其中的部分之间的距离，直到其强度降低到其入射时的1％，并且光电导体的与光入射相反的界面 一侧为5μm以下，能够降低光电导层的残留电位。 构成电子照相构件的光电导元件的从其表面向内存储电荷的至少10nm厚的电子照相构件的部分由非晶硅制成，其具有至少1.6eV的光学禁带宽和电阻率 至少1010 OMEGA xcm。 此外，在这种光导电层内，具有比形成表面部分的非晶硅的光学禁带宽小的非晶硅区域设置在至少10nm的厚度。 通过以这种方式在光导电层内形成较窄的光学禁带区域，可以提高光电导层对较长波长的光的灵敏度。