摘要:
A semiconductor laser array device comprising a substrate with a plurality of grooves and an active layer disposed over the substrate, resulting in optical waveguides within the active layer corresponding to the grooves, wherein the grooves are disposed over the entire area of the substrate and a means for preventing the injection of current into some of the grooves that are positioned outside of the central area of the substrate is disposed whereby the other grooves positioned in the central area of the substrate consitute a laser array portion of the semiconductor laser array device.
摘要:
A semiconductor laser array device with a waveguide structure comprising waveguides designed such that the widths thereof gradually increase from the center waveguide to the waveguides positioned at both sides of the array portions.
摘要:
A semiconductor laser array device comprising a substrate; an index-waveguiding area positioned on said substrate; a Fourier-converting area, which is adjacent to said waveguiding area and in which laser lights emitted with synchronized phases from said waveguiding area undergo the Fourier-conversion, positioned on said substrate; and a reflecting mirror, which is adjacent to said Fourier-converting area and by which said converted laser lights with a 0.degree.-phase shift mode are selectively reflected so as to be incident upon said waveguiding areas.
摘要:
A semiconductor laser array device comprising an optical waveguide which is in a single mode or a multiple mode in the center portion thereof and is in a branching mode at each of both end portions thereof to form a plurality of branching waveguides which are positioned symmetrically with respect to the waveguiding direction of the laser beams and which are parallel to each other near the facets, thereby oscillating laser beams with a 0.degree.-phase shift therebetween.
摘要:
A process for the production of semiconductor devices includes: (1) forming a thin semiconductor film containing no aluminum on a first semiconductor layer containing aluminum that is disposed on a substrate one or more (2) forming channels on said thin semiconductor film in such a manner that the channel or channels reach or go through said first semiconductor layer to expose a portion of said substrate, resulting in a channelled substrate for succeeding crystal growth thereon, and (3) producing by epitaxial growth crystalline layers on said channelled substrate by the use of a crystal growth solution having a supersaturation which is high enough to prevent said first semiconductor layer from undergoing meltback.
摘要:
A semiconductor laser array apparatus comprising a single substrate and a plurality of semiconductor laser devices that are disposed with a given pitch on the substrate, some of the semiconductor laser devices constituting laser devices of a laser oscillation-operating area of the semiconductor laser array apparatus and the other semiconductor laser devices constituting laser devices of the non-laser oscillation-operating areas that are positioned outside of the laser oscillation-operating area, wherein the oscillation threshold current level of at least one of the semiconductor laser devices of each of the non-laser oscillation-operating areas that is the closest to the laser oscillation-operating area is higher than those of the semiconductor laser devices of the laser oscillation-operating area.
摘要:
A semiconductor laser array device comprising an oscillation operating area provided with a plurality of first index-waveguides in a parallel manner and a non-oscillation operating area provided with a plurality of second index-waveguides in a parallel manner through which laser light produced in said oscillation operating area are guided through the waveguide from said oscillation operating area to the end facets of the second index-waveguides of said non-oscillation operating area, wherein the second index-waveguides are different in length between the adjacent waveguides and the end facet of each of the second index-waveguides does not function as a cavity facet of the laser but it functions as the light-emitting facet of the device.
摘要:
A semiconductor laser array device comprising a substrate with a plurality of grooves and an active layer disposed over the substrate, resulting in optical waveguides within the active layer corresponding to the grooves, wherein the grooves are disposed over the entire area of the substrate and a means for preventing the injection of current into some of the grooves that are positioned outside of the central area of the substrate is disposed whereby the other grooves positioned in the central area of the substrate constitute a laser array portion of the semiconductor laser array device.
摘要:
A semiconductor laser device comprises a laminated crystal structure which includes a Ga.sub.1-y Al.sub.y As optical guiding layer and a Ga.sub.1-z Al.sub.z As (z>y) cladding layer in this sequence, the cladding layer is formed on both a Ga.sub.1-x Al.sub.2 As (0.ltoreq.x.ltoreq.0.1 and x
摘要翻译:半导体激光器件包括依次包括Ga1-yAlyAs光导层和Ga1-zAlzAs(z> y)包覆层的层压晶体结构,在Ga 1-x Al 2 As(z) x <= 0.1和x
摘要:
A semiconductor laser array includes a plurality of first wave guides extending from one end of the semiconductor laser array device, a plurality of second wave guides extending from the other end of the semiconductor laser array device, and coupling wave guides for coupling the second wave guide so that the two first wave guides are confronted. The coupling wave guides have asymmetrically divided connecting points so that the laser beam is prevented from centralizing towards the wave guides located close to the center of the semiconductor laser array.