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公开(公告)号：US20060127093A1
公开(公告)日：2006-06-15
申请号：US11252401
申请日：2005-10-17
申请人： Sahng Park , Su Oh , Kwang Choi , Moon Park , Yong Baek , Kwang Oh
发明人： Sahng Park , Su Oh , Kwang Choi , Moon Park , Yong Baek , Kwang Oh
IPC分类号： H04J14/00
CPC分类号： H04J14/0282 , H04J14/0226 , H04J14/0246 , H04J14/0247 , H04J14/025 , H04J14/0252 , H04J2014/0253
摘要： A channel switching function is added to a wavelength division multiplexing passive optical network (WDM-PON) system, which is an access optical network system, and the potential transmission rate is increased by combining wide wavelength tunable lasers and a time division multiplexing (TDM) data structure and properly using the necessary optical components. In addition, when the wavelength of a light source or an arrayed waveguide grating (AWG) changes, the wavelength is traced and the magnitude of a transmitted signal is maximized without an additional detour line using a loop-back network structure. Furthermore, fewer thermo-electric controllers (TECs) are required for stabilizing the temperature of an optical line terminal (OLT) using wavelength tunable lasers, each laser electrically changing its wavelength.
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2.发明申请Monolithic integrated semiconductor modulator-SOA-LED broad band light source and method of fabricating the same 审中-公开单片集成半导体调制器 - SOA-LED宽带光源及其制造方法公开(公告)号：US20060126157A1
公开(公告)日：2006-06-15
申请号：US11298387
申请日：2005-12-08
IPC分类号： H01S3/00
摘要： Provided is a monolithic integrated semiconductor broad band light source. In the monolithic integrated semiconductor broad band light source, an electro absorption modulator, a semiconductor optical amplifier, and a light emitting diode are integrated on an InP substrate. Ions are implanted among the electro absorption modulator, the semiconductor optical amplifier, and the light emitting diode to electrically insulate the electro absorption modulator, the semiconductor optical amplifier, and the light emitting diode from one another. Electrodes independently implant currents into the electro absorption modulator, the semiconductor optical amplifier, and the light emitting diode. In particular, it is important to form a current intercepting layer and electrically insulate electrodes from one another but optically connect the electrodes in terms of performance of the monolithic integrated semiconductor broad band light source. The semiconductor optical amplifier and the light emitting diode are integrated into an active layer. As a result, broad band light generated from the light emitting diode is amplified by the semiconductor optical amplifier and modulated by a modulator so as to fabricate a monolithic broad band light source.
摘要翻译： 提供了一种单片集成半导体宽带光源。 在单片集成半导体宽带光源中，在InP衬底上集成有电吸收调制器，半导体光放大器和发光二极管。 将离子植入在电吸收调制器，半导体光放大器和发光二极管之间，以将电吸收调制器，半导体光放大器和发光二极管彼此电绝缘。 电极独立地将电流注入到电吸收调制器，半导体光放大器和发光二极管中。 特别地，重要的是形成电流截取层并且将电极彼此电绝缘，但是在单片集成半导体宽带光源的性能方面将电极光学连接。 半导体光放大器和发光二极管集成到有源层中。 结果，由发光二极管产生的宽带光被半导体光放大器放大并被调制器调制，以制造单片宽带光源。
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公开(公告)号：US20070223551A1
公开(公告)日：2007-09-27
申请号：US11635195
申请日：2006-12-07
IPC分类号： H01S5/00
CPC分类号： H01S5/0265 , B82Y20/00 , H01S5/026 , H01S5/0425 , H01S5/101 , H01S5/2063 , H01S5/2201 , H01S5/2224 , H01S5/2275 , H01S5/3406 , H01S5/34306 , H01S5/4006
摘要： A 1.55 μm SLD having a laser diode (LD) region and a semiconductor optical amplifier (SOA) region, and a method of fabricating the same, are disclosed. The SLD includes: an InP substrate having a LD region and a SOA region for amplifying light emitted from the LD region; an optical waveguide having a BRS (buried ridge strip) structure having an active layer of resonant strip pattern formed on the InP substrate and extending from the SOA region to the LD region; a first electrode formed on the active layer in the SOA region, a second electrode formed on the active layer in the LD region and electrically isolated from the first electrode; and a current blocking region interposed between the first electrode and the second electrode in order to electrically isolate the first electrode and the second electrode from each other.
摘要翻译： 公开了具有激光二极管（LD）区域和半导体光放大器（SOA）区域的1.55μmSLD及其制造方法。 SLD包括：具有LD区域的InP衬底和用于放大从LD区域发射的光的SOA区域; 具有BRS（埋脊条）结构的光波导，其具有形成在InP衬底上并从SOA区延伸到LD区的谐振带图案的有源层; 形成在SOA区域中的有源层上的第一电极，形成在LD区域中的有源层上并与第一电极电隔离的第二电极; 以及插入在第一电极和第二电极之间的电流阻挡区域，以将第一电极和第二电极彼此电隔离。
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公开(公告)号：US20070133649A1
公开(公告)日：2007-06-14
申请号：US11634277
申请日：2006-12-05
申请人： Oh Kwon , Kang Kim , Jonghoi Kim , Eundeok Sim , Kwang Oh
发明人： Oh Kwon , Kang Kim , Jonghoi Kim , Eundeok Sim , Kwang Oh
IPC分类号： H01S3/08
CPC分类号： H01S5/141 , G02B6/29326 , G02B6/29328 , G02B6/29395 , H01S3/1075 , H01S5/02248 , H01S5/026 , H01S5/06255
摘要： Provided is a wavelength tunable light source including a semiconductor optical amplifier, a beam steering unit or a beam deflector, and a concave diffraction grating integrated therein. The wavelength tunable light source can be easily implemented since locations to which a beam is diffracted by the concave diffraction grating and at which portions of the beam with different wavelengths have constructive interference form a straight line, not a Rowland circle. Furthermore, wavelength tuning and optical coupling characteristics of the wavelength tunable light source are excellent. Since both single integration and hybrid integration are possible for the wavelength tunable light source, the wavelength tunable light source exhibits superior operating characteristics and high reliability.
摘要翻译： 提供了包括半导体光放大器，光束转向单元或光束偏转器的波长可调光源以及集成在其中的凹衍射光栅。 波长可调谐光源可以容易地实现，因为光束被凹衍射光栅衍射的位置和具有不同波长的光束的部分具有相长的干涉形成直线而不是罗兰圆。 此外，波长可调光源的波长调谐和光耦合特性优异。 由于单一集成和混合集成对于波长可调谐光源是可能的，所以波长可调光源表现出优异的操作特性和高可靠性。
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5.发明申请Method of fabricating ridge type waveguide integrated semiconductor optical device 审中-公开脊型波导集成半导体光器件的制造方法公开(公告)号：US20060104583A1
公开(公告)日：2006-05-18
申请号：US11122998
申请日：2005-05-06
IPC分类号： G02B6/10
CPC分类号： G02B6/136 , G02B6/122 , G02B2006/12097
摘要： Provided is a method of fabricating a ridge type waveguide integrated semiconductor optical device. The method includes: separating a substrate into an active waveguide region and a passive waveguide region and selectively epitaxial-growing an active layer and a passive layer in the active waveguide region and the passive waveguide region, respectively, such that the active layer and the passive layer are vertically aligned with each other; sequentially forming a capping layer and an electrode connection layer on the active layer and the passive layer; forming a first insulating layer pattern on a predetermined region of the electrode connection layer disposed in the active waveguide region and simultaneously, forming a second insulating layer pattern on a predetermined region of the electrode connection layer disposed in the passive waveguide region; forming a shallow ridge type active waveguide and a shallow ridge type passive waveguide by performing an etching process using the first and second insulating layer patterns as etch masks until the capping layer is etched to a predetermined depth; and forming a passivation pattern on the entire surface of the shallow ridge type active waveguide and forming a deep ridge type passive waveguide by performing an etching process using the second insulating layer pattern as an etch mask until the substrate is etched to a predetermined depth.
摘要翻译： 提供了一种制造脊型波导集成半导体光学器件的方法。 该方法包括：将衬底分离成有源波导区域和无源波导区域，并分别在有源波导区域和无源波导区域中选择性地外延生长有源层和无源层，使得有源层和被动 层彼此垂直对准; 在有源层和被动层上依次形成覆盖层和电极连接层; 在设置在有源波导区域中的电极连接层的预定区域上形成第一绝缘层图案，并同时在布置在无源波导区域中的电极连接层的预定区域上形成第二绝缘层图案; 通过使用第一和第二绝缘层图案作为蚀刻掩模进行蚀刻处理，直到将覆盖层蚀刻到预定深度来形成浅脊型有源波导和浅脊型无源波导; 并且在浅脊型有源波导的整个表面上形成钝化图案，并通过使用第二绝缘层图案作为蚀刻掩模进行蚀刻处理形成深脊型无源波导，直到基板被蚀刻到预定深度。
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公开(公告)号：US20050219433A1
公开(公告)日：2005-10-06
申请号：US11091477
申请日：2005-03-29
IPC分类号： G02F1/136 , G02F1/133 , G02F1/1362 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786
CPC分类号： G02F1/13458 , G02F1/136227 , H01L27/124 , H01L27/1288
摘要： An LCD device and a method for manufacturing the same is disclosed in which the manufacturing process is simplified by etching an overcoat layer and a lower insulating layer at the same time. Disclosed is a method for manufacturing the LCD device that includes forming a thin film transistor (TFT) on an active region of a substrate, forming a gate pad region and data pad region, and forming a passivation layer on the entire surface of the substrate. The manufacturing method further includes forming an overcoat layer and selectively etching the overcoat layer. Contact holes for the pixel electrode, the gate pad, and the data pad are formed by selectively etching the overcoat layer, the passivation layer, and the gate insulating layer though one process.
摘要翻译： 公开了一种LCD装置及其制造方法，其中通过同时蚀刻外涂层和下绝缘层来简化制造工艺。 公开了一种用于制造LCD器件的方法，其包括在衬底的有源区上形成薄膜晶体管（TFT），形成栅极焊盘区域和数据焊盘区域，并在衬底的整个表面上形成钝化层。 制造方法还包括形成外涂层并选择性地蚀刻外涂层。 通过一个工艺，通过选择性地蚀刻外涂层，钝化层和栅极绝缘层来形成像素电极，栅极焊盘和数据焊盘的接触孔。
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公开(公告)号：US08979038B1
公开(公告)日：2015-03-17
申请号：US13692953
申请日：2012-12-03
申请人： Kwang Oh
发明人： Kwang Oh
摘要： A method for applying a clamp for a construction strut that allows a pipe to be clamped to the construction strut in which the clamp has a fastener that is not exposed above the clamp curvature and in which the fastener head is easily accessible. Also the clamp has a retaining tab and a neck portion such that it can be installed by straight-in insertion at the top of a construction strut. Also, the method has an embodiment in that the clamp can be installed either on the open side of the construction strut or on the closed side using slots in the closed side by straight-in passing the retaining tab past the inturned flanges on the top of the construction strut and by a rotation at the bottom of the construction strut.
摘要翻译： 一种用于施加用于构造支柱的夹具的方法，其允许管被夹紧到构造支柱上，其中夹具具有不暴露在夹具曲率之上的紧固件，并且紧固件头部容易接近。 此外，夹具具有保持片和颈部，使得其可以通过直接插入在构造支柱的顶部而被安装。 此外，该方法具有一个实施例，其中夹具可以安装在施工支柱的开放侧或封闭侧，使用在封闭侧的槽，通过直线穿过保持片穿过位于 施工支柱和施工支柱底部的旋转。
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公开(公告)号：US20100096510A1
公开(公告)日：2010-04-22
申请号：US12256407
申请日：2008-10-22
申请人： Kwang Oh
发明人： Kwang Oh
摘要： A clamp for a construction strut that allows a pipe to be clamped to the construction strut in which the clamp has a fastener that is not exposed above the clamp curvature and in which the fastener head is easily accessible. Also the clamp has a retaining tab and a neck portion such that it can be installed either on the open side of the construction strut or on the closed side using slots in the closed side by straight-in passing the retaining tab past the inturned flanges on the top of the construction strut.
摘要翻译： 用于构造支柱的夹具，其允许管道夹紧到构造支柱上，其中夹具具有不暴露在夹具曲率之上并且紧固件头部容易接近的紧固件。 此外，夹具具有保持突片和颈部部分，使得其可以安装在施工支柱的开放侧或封闭侧，使用在封闭侧的狭槽，通过将保持突片直接穿过所述折回的凸缘上 顶部的施工支柱。
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公开(公告)号：US20060126693A1
公开(公告)日：2006-06-15
申请号：US11176743
申请日：2005-07-07
申请人： Oh Kee Kwon , Kwang Oh , Kang Kim , Jong Kim , Hyun Kim
发明人： Oh Kee Kwon , Kwang Oh , Kang Kim , Jong Kim , Hyun Kim
IPC分类号： H01S5/00
CPC分类号： H01S5/06255 , H01S5/026 , H01S5/065 , H01S5/0654 , H01S5/0656 , H01S5/1021 , H01S5/1025 , H01S5/1039
摘要： Provided is an integrated semiconductor light source using locking characteristic by an external light injection, including: an active region controlling an optical gain and an optical output by current injection; and a passive region having a structure integrated with the active region and moving a cavity mode by current injection or voltage application to lock injection light.
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公开(公告)号：US20060082894A1
公开(公告)日：2006-04-20
申请号：US11237043
申请日：2005-09-28
IPC分类号： G02B3/00
CPC分类号： G02B27/095 , G02B19/0009 , G02B19/0052 , G02B26/0875 , G02B27/0977 , G02B2006/12078 , G02B2006/12104 , G02B2006/12145 , G02F1/295
摘要： Provided is an optical deflector for deflecting radiation beams. The optical deflector includes: a peripheral region having a first effective refractive index; and a deflection pattern region having a predetermined shape and a second effective refractive index, wherein the second effective refractive index differs from the first effective refractive index. Here, due to the deflection pattern region having the predetermined shape, the radiation beams are deflected in a direction starting from a certain point. By using the optical deflector, the locus of a light source can be designed in one of various forms, such as a straight line, a circle, an ellipse, or a parabola.
摘要翻译： 提供了用于偏转辐射束的光学偏转器。 光学偏转器包括：具有第一有效折射率的周边区域; 以及具有预定形状和第二有效折射率的偏转图案区域，其中所述第二有效折射率与所述第一有效折射率不同。 这里，由于具有预定形状的偏转图案区域，辐射束在从某一点开始的方向上偏转。 通过使用光学偏转器，光源的轨迹可以被设计成各种形式之一，例如直线，圆形，椭圆形或抛物线。
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