公开(公告)号：US08853098B2

公开(公告)日：2014-10-07

申请号：US13401755

申请日：2012-02-21

申请人： Sam H. Kim ,  John M. White ,  Soo Young Choi ,  Carl A. Sorensen ,  Robin L. Tiner ,  Beom Soo Park

发明人： Sam H. Kim ,  John M. White ,  Soo Young Choi ,  Carl A. Sorensen ,  Robin L. Tiner ,  Beom Soo Park

IPC分类号： H01L21/00 ,  H01L21/44 ,  H01L21/31 ,  H01L21/469 ,  H01L21/687 ,  H01L21/683

CPC分类号： H01L21/68742 ,  H01L21/6831

摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.

摘要翻译： 本文公开的实施例通常涉及用于将衬底基本上与衬底支撑件齐平地放置在处理室中的装置和方法。 当将大面积基板放置在基板支撑件上时，由于可能存在于基板和基板支撑件之间的气体袋，基板可能不能完全与基板支撑件齐平。 气袋可导致基板上的不均匀沉积。 因此，从衬底和支撑件之间拉动气体可以将衬底基本上与支撑件齐平。 在沉积期间，静电电荷可能积聚并使衬底粘附到衬底支撑件上。 通过在衬底和衬底支撑件之间引入气体，可以克服静电力，使得衬底可以用较少或不需要额外时间和气体的等离子体支架与基座分离。

公开(公告)号：US20100184290A1

公开(公告)日：2010-07-22

申请号：US12686483

申请日：2010-01-13

申请人： Sam H. Kim ,  John M. White ,  Soo Young Choi ,  Carl A. Sorensen ,  Robin L. Tiner ,  Beom Soo Park

发明人： Sam H. Kim ,  John M. White ,  Soo Young Choi ,  Carl A. Sorensen ,  Robin L. Tiner ,  Beom Soo Park

IPC分类号： H01L21/28

CPC分类号： H01L21/68742 ,  H01L21/6831

摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.

摘要翻译： 本文公开的实施例通常涉及用于将衬底基本上与衬底支撑件齐平地放置在处理室中的装置和方法。 当将大面积基板放置在基板支撑件上时，由于可能存在于基板和基板支撑件之间的气体袋，基板可能不能完全与基板支撑件齐平。 气袋可导致基板上的不均匀沉积。 因此，从衬底和支撑件之间拉动气体可以将衬底基本上与支撑件齐平。 在沉积期间，静电电荷可能积聚并使衬底粘附到衬底支撑件上。 通过在衬底和衬底支撑件之间引入气体，可以克服静电力，使得衬底可以用较少或不需要额外时间和气体的等离子体支架与基座分离。

公开(公告)号：US20120149194A1

公开(公告)日：2012-06-14

申请号：US13401755

申请日：2012-02-21

申请人： SAM H. KIM ,  John M. White ,  Soo Young Choi ,  Carl A. Sorensen ,  Robin L. Tiner ,  Beom Soo Park

发明人： SAM H. KIM ,  John M. White ,  Soo Young Choi ,  Carl A. Sorensen ,  Robin L. Tiner ,  Beom Soo Park

IPC分类号： H01L21/28

CPC分类号： H01L21/68742 ,  H01L21/6831

摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.

摘要翻译： 本文公开的实施例通常涉及用于将衬底基本上与衬底支撑件齐平地放置在处理室中的装置和方法。 当将大面积基板放置在基板支撑件上时，由于可能存在于基板和基板支撑件之间的气体袋，基板可能不能完全与基板支撑件齐平。 气袋可导致基板上的不均匀沉积。 因此，从衬底和支撑件之间拉动气体可以将衬底基本上与支撑件齐平。 在沉积期间，静电电荷可能积聚并使衬底粘附到衬底支撑件上。 通过在衬底和衬底支撑件之间引入气体，可以克服静电力，使得衬底可以用较少或不需要额外时间和气体的等离子体支架与基座分离。

公开(公告)号：US20090064934A1

公开(公告)日：2009-03-12

申请号：US12205363

申请日：2008-09-05

申请人： BEOM SOO PARK ,  Young Jin Choi ,  Robin L. Tiner ,  Sam H. Kim ,  Soo Young Choi ,  John M. White ,  Dong-Kil Yim

发明人： BEOM SOO PARK ,  Young Jin Choi ,  Robin L. Tiner ,  Sam H. Kim ,  Soo Young Choi ,  John M. White ,  Dong-Kil Yim

IPC分类号： C23C16/513

CPC分类号： C23C16/45502 ,  C23C16/4401

摘要： The present invention generally comprises a method and an apparatus for guiding the flow of processing gases away from chamber walls and slit valve opening. By controlling the flow path of the process gases within a processing chamber, undesirable deposition upon chamber walls and within slit valve openings may be reduced. By reducing deposition in slit valve openings, flaking may be reduced. By reducing deposition on chamber walls, the time between chamber cleaning may be increased. Thus, guiding the flow of processing gases within the processing chamber may increase substrate throughput.

摘要翻译： 本发明通常包括一种用于将处理气体的流动引导离开室壁和狭缝阀开口的方法和装置。 通过控制处理室内的处理气体的流动路径，可以减少在室壁上和狭缝阀开口内的不期望的沉积。 通过减少狭缝阀开口中的沉积，可能会降低剥落。 通过减少室壁上的沉积，可以增加室清洁之间的时间。 因此，引导处理室内的处理气体的流动可以增加衬底生产量。

公开(公告)号：US08430961B2

公开(公告)日：2013-04-30

申请号：US12205363

申请日：2008-09-05

申请人： Beom Soo Park ,  Young Jin Choi ,  Robin L. Tiner ,  Sam H. Kim ,  Soo Young Choi ,  John M. White ,  Dong-Kil Yim

发明人： Beom Soo Park ,  Young Jin Choi ,  Robin L. Tiner ,  Sam H. Kim ,  Soo Young Choi ,  John M. White ,  Dong-Kil Yim

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： C23C16/45502 ,  C23C16/4401

摘要： The present invention generally comprises a method and an apparatus for guiding the flow of processing gases away from chamber walls and slit valve opening. By controlling the flow path of the process gases within a processing chamber, undesirable deposition upon chamber walls and within slit valve openings may be reduced. By reducing deposition in slit valve openings, flaking may be reduced. By reducing deposition on chamber walls, the time between chamber cleaning may be increased. Thus, guiding the flow of processing gases within the processing chamber may increase substrate throughput.

摘要翻译： 本发明通常包括一种用于将处理气体的流动引导离开室壁和狭缝阀开口的方法和装置。 通过控制处理室内的处理气体的流动路径，可以减少在室壁上和狭缝阀开口内的不期望的沉积。 通过减少狭缝阀开口中的沉积，可能会降低剥落。 通过减少室壁上的沉积，可以增加室清洁之间的时间。 因此，引导处理室内的处理气体的流动可以增加衬底生产量。

公开(公告)号：US20090283039A1

公开(公告)日：2009-11-19

申请号：US12467477

申请日：2009-05-18

申请人： JOHN M. WHITE ,  Soo Young Choi ,  Beom Soo Park ,  Gaku Furuta ,  Young Jin Choi ,  Robin L. Tiner

发明人： JOHN M. WHITE ,  Soo Young Choi ,  Beom Soo Park ,  Gaku Furuta ,  Young Jin Choi ,  Robin L. Tiner

IPC分类号： C23C16/54 ,  F28D7/00

CPC分类号： F28D7/00 ,  C23C16/4405 ,  F28D2021/0078 ,  F28F9/26

摘要： The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component.

摘要翻译： 本发明通常包括组件之间的联接。 当点燃离开处理室的等离子体时，反应气体离子可通过许多部件行进到处理室。 反应气体离子可能相当热，并导致各种部件变得非常热，因此，装置部件之间的密封可能失效。 因此，冷却反应气体离子可以通过其移动的任何金属组分可能是有益的。 然而，在冷却的金属组分和陶瓷组分之间的界面处，由于反应气体离子的热量和金属组分的冷却，陶瓷组分可能经历足以破坏陶瓷材料的温度梯度。 因此，将金属部件的凸缘延伸到陶瓷部件中可以减小界面处的温度梯度并减少陶瓷部件的开裂。

公开(公告)号：US20090007846A1

公开(公告)日：2009-01-08

申请号：US12234359

申请日：2008-09-19

申请人： ERNST KELLER ,  John M. White ,  Robin L. Tiner ,  Jiri Kucera ,  Soo Young Choi ,  Beom Soo Park ,  Michael Starr

发明人： ERNST KELLER ,  John M. White ,  Robin L. Tiner ,  Jiri Kucera ,  Soo Young Choi ,  Beom Soo Park ,  Michael Starr

IPC分类号： C23C16/00

CPC分类号： H01J37/3244 ,  C23C16/45565

摘要： An apparatus and method for supporting a substantial center portion of a gas distribution plate is disclosed. At least one support member is capable of engaging and disengaging the diffuser with a mating connection without prohibiting flow of a gas or gases through the diffuser and is designed to provide vertical suspension to a diffuser that is supported at its perimeter, or capable of supporting the diffuser without a perimeter support. In one aspect, the at least one support member is a portion of a gas delivery conduit and in another embodiment is a plurality of support members separated from the gas delivery conduit. The at least one support member is capable of translating vertical lift, or vertical compression to a center area of the diffuser. A method and apparatus for controlling gas flow from the gas delivery conduit to the gas distribution plate is also disclosed.

摘要翻译： 公开了一种用于支撑气体分布板的大部分中心部分的装置和方法。 至少一个支撑构件能够通过配合连接件接合和分离扩散器，而不阻止气体或气体流过扩散器，并且被设计成向在其周边支撑的扩散器提供垂直悬架，或者能够支撑 扩散器没有周界支撑。 在一个方面，所述至少一个支撑构件是气体输送导管的一部分，并且在另一个实施例中是与气体输送导管分离的多个支撑构件。 至少一个支撑构件能够将垂直升降或垂直压缩平移到扩散器的中心区域。 还公开了一种用于控制从气体输送管道到气体分配板的气流的方法和装置。

公开(公告)号：US20080187682A1

公开(公告)日：2008-08-07

申请号：US11955575

申请日：2007-12-13

申请人： Beom Soo Park ,  Robin L. Tiner ,  Soo Young Choi ,  John M. White

发明人： Beom Soo Park ,  Robin L. Tiner ,  Soo Young Choi ,  John M. White

IPC分类号： C23C16/513 ,  C23C16/00

CPC分类号： C23C16/4401 ,  C23C16/5096 ,  H01J37/32623 ,  H01J37/32697

摘要： A method and apparatus for processing a substrate are provided. The chamber body comprises a chamber bottom and a sidewall having a slit valve. A substrate support comprising a support body is disposed in the chamber body. A first end of at least one wide RF ground strap is coupled with the support body and a second end of at least one RF ground strap is coupled with the chamber bottom. At least one extension bar is positioned along a peripheral edge of the support body. The method comprises providing a processing chamber having a slit valve and a substrate support, providing RF power to a distribution plate disposed over the substrate support, flowing gas through the distribution plate, plasma processing a substrate disposed on the substrate support, and reducing the generation of plasma adjacent to the slit valve.

摘要翻译： 提供了一种用于处理衬底的方法和设备。 腔室主体包括腔室底部和具有狭缝阀的侧壁。 包括支撑体的基板支撑件设置在室主体中。 至少一个宽RF接地带的第一端与支撑体耦合，并且至少一个RF接地带的第二端与腔室底部联接。 至少一个延伸杆沿着支撑体的外围边缘定位。 该方法包括提供具有狭缝阀和衬底支撑件的处理室，向布置在衬底支撑件上方的分配板提供RF功率，使气体流过分布板，等离子体处理设置在衬底支架上的衬底，并减少发电 的等离子体。

公开(公告)号：US20130263782A1

公开(公告)日：2013-10-10

申请号：US13569064

申请日：2012-08-07

申请人： QUNHUA WANG ,  Soo Young Choi ,  Robin L. Tiner ,  John M. White ,  Gaku Furuta ,  Beom Soo Park

发明人： QUNHUA WANG ,  Soo Young Choi ,  Robin L. Tiner ,  John M. White ,  Gaku Furuta ,  Beom Soo Park

IPC分类号： C23C16/04

摘要： Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.

摘要翻译： 本文描述了用于处理衬底的装置。 用于控制基板上的沉积的装置可以包括：腔室，其包括阴影框架支撑件，包括基板支撑表面的基板支撑件，具有包括第一支撑表面的阴影框架主体的阴影框架，与第一表面相对的第二支撑表面， 以及与阴影框体连接的可拆卸唇缘。 可拆卸唇缘可以包括支撑连接，面向基底的第一唇缘表面，与第一唇缘表面相对的第二唇缘表面，位于第一支撑表面上方的第一边缘以及与第一边缘相对的第二边缘以接触基底。

公开(公告)号：US08381677B2

公开(公告)日：2013-02-26

申请号：US11955575

申请日：2007-12-13

申请人： Beom Soo Park ,  Robin L. Tiner ,  Soo Young Choi ,  John M. White

发明人： Beom Soo Park ,  Robin L. Tiner ,  Soo Young Choi ,  John M. White

IPC分类号： C23C16/00 ,  C23C16/50 ,  C23F1/00 ,  H01L21/306

CPC分类号： C23C16/4401 ,  C23C16/5096 ,  H01J37/32623 ,  H01J37/32697

摘要： A method and apparatus for processing a substrate are provided. The chamber body comprises a chamber bottom and a sidewall having a slit valve. A substrate support comprising a support body is disposed in the chamber body. A first end of at least one wide RF ground strap is coupled with the support body and a second end of at least one RF ground strap is coupled with the chamber bottom. At least one extension bar is positioned along a peripheral edge of the support body. The method comprises providing a processing chamber having a slit valve and a substrate support, providing RF power to a distribution plate disposed over the substrate support, flowing gas through the distribution plate, plasma processing a substrate disposed on the substrate support, and reducing the generation of plasma adjacent to the slit valve.

摘要翻译： 提供了一种用于处理衬底的方法和设备。 腔室主体包括腔室底部和具有狭缝阀的侧壁。 包括支撑体的基板支撑件设置在室主体中。 至少一个宽RF接地带的第一端与支撑体耦合，并且至少一个RF接地带的第二端与腔室底部联接。 至少一个延伸杆沿着支撑体的外围边缘定位。 该方法包括提供具有狭缝阀和衬底支撑件的处理室，向布置在衬底支撑件上方的分配板提供RF功率，使气体流过分布板，等离子体处理设置在衬底支架上的衬底，并减少发电 的等离子体。