DOUBLE GATE THIN-FILM TRANSISTOR AND OLED DISPLAY APPARATUS INCLUDING THE SAME
    2.
    发明申请
    DOUBLE GATE THIN-FILM TRANSISTOR AND OLED DISPLAY APPARATUS INCLUDING THE SAME 有权
    双栅型薄膜晶体管和OLED显示装置,包括它们

    公开(公告)号:US20130157399A1

    公开(公告)日:2013-06-20

    申请号:US13758869

    申请日:2013-02-04

    Abstract: A double gate thin-film transistor (TFT), and an organic light-emitting diode (OLED) display apparatus including the double gate TFT, includes a double gate thin-film transistor (TFT) including: a first gate electrode on a substrate; an active layer on the first gate electrode; source and drain electrodes on the active layer; a planarization layer on the substrate and the source and drain electrodes, and having an opening corresponding to the active layer; and a second gate electrode in the opening.

    Abstract translation: 包括双栅极TFT的双栅极薄膜晶体管(TFT)和有机发光二极管(OLED)显示装置包括双栅极薄膜晶体管(TFT),其包括:在基板上的第一栅电极; 在第一栅电极上的有源层; 有源层上的源极和漏极; 所述基板上的平坦化层和所述源极和漏极,并且具有对应于所述有源层的开口; 和第二栅电极。

    Display device
    3.
    发明授权

    公开(公告)号:US10418431B2

    公开(公告)日:2019-09-17

    申请号:US15416653

    申请日:2017-01-26

    Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

    Organic light emitting display apparatus
    6.
    发明授权
    Organic light emitting display apparatus 有权
    有机发光显示装置

    公开(公告)号:US09209423B2

    公开(公告)日:2015-12-08

    申请号:US14726991

    申请日:2015-06-01

    Abstract: An organic light emitting display apparatus includes a substrate, a light conversion layer on the substrate, the light conversion layer including an oxide semiconductor, a passivation layer covering the light conversion layer, a first electrode on the passivation layer, an intermediate layer on the first electrode, the intermediate layer including an organic emission layer, and a second electrode on the intermediate layer.

    Abstract translation: 一种有机发光显示装置,包括基板,基板上的光转换层,包含氧化物半导体的光转换层,覆盖光转换层的钝化层,钝化层上的第一电极,第一 电极,中间层包括有机发射层,第二电极在中间层上。

    Display device
    8.
    发明授权

    公开(公告)号:US11626461B2

    公开(公告)日:2023-04-11

    申请号:US17338577

    申请日:2021-06-03

    Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

    Display device
    9.
    发明授权

    公开(公告)号:US11056551B2

    公开(公告)日:2021-07-06

    申请号:US16556166

    申请日:2019-08-29

    Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

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