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    Connecting structure of a conductive layer
    3.
    发明授权
    Connecting structure of a conductive layer 有权

    公开(公告)号：US11276580B2

    公开(公告)日：2022-03-15

    申请号：US16296646

    申请日：2019-03-08

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Su Bin Bae ,  Yu-Gwang Jeong ,  Shin Il Choi ,  Sang Gab Kim ,  Joon Geol Lee

    IPC: H01L29/41 ,  H01L21/311 ,  H01L21/027 ,  H01L21/768 ,  H01L21/763

    Abstract: A connecting structure of a conductive layer includes a first conductive layer, a first insulating layer disposed on the first conductive layer and including a first opening overlapping the first conductive layer, a connecting conductor disposed on the first insulating layer and connected to the first conductive layer through the first opening, an insulator island disposed on the connecting conductor, a second insulating layer disposed on the first insulating layer and including a second opening overlapping the connecting conductor and the insulator island, and a second conductive layer disposed on the second insulating layer and connected to a connecting electrode through the second opening. A sum of a thickness of the first insulating layer and a thickness of the second insulating layer is greater than or equal to 1 μm, and each of the thicknesses of the first and second insulating layers is less than 1 μm.

    Organic light-emitting diode display device and method of fabricating the same
    4.
    发明授权
    Organic light-emitting diode display device and method of fabricating the same 有权

    公开(公告)号：US10811478B2

    公开(公告)日：2020-10-20

    申请号：US16374706

    申请日：2019-04-03

    Applicant: Samsung Display Co., Ltd.

    Inventor： Dae Won Choi ,  Tae Wook Kang ,  Kyeong Su Ko ,  Sang Gab Kim ,  Tae Sung Kim ,  Joon Geol Lee ,  Hyun Min Cho

    IPC: H01L27/00 ,  H01L51/52 ,  H01L27/32 ,  H01L51/50

    Abstract: An organic light-emitting diode display device includes a pixel electrode, a pixel-defining layer, an organic emission layer, and a counter electrode. The pixel-defining layer includes an opening partially exposing the pixel electrode. The organic emission layer is disposed on the pixel electrode. The organic emission layer is disposed in the opening. The counter electrode is disposed on the organic emission layer. The counter electrode opposes the pixel electrode. The pixel-defining layer includes a first pixel-defining layer and a second pixel-defining layer. The first pixel-defining layer is disposed on the pixel electrode and includes an inorganic material. The second pixel-defining layer is disposed on the first pixel-defining layer and includes an organic material. A sidewall of the first pixel-defining layer that is closest to the opening is aligned with a sidewall of the second pixel-defining layer that is closest to the opening.

    Display device, manufacturing method thereof, and electrode forming method
    5.
    发明授权
    Display device, manufacturing method thereof, and electrode forming method 有权

    公开(公告)号：US10748943B2

    公开(公告)日：2020-08-18

    申请号：US16124356

    申请日：2018-09-07

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Hyun Min Cho ,  Shin Il Choi ,  Kyeong Su Ko ,  Sang Gab Kim ,  Joon Geol Lee

    IPC: H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  H01L21/3213 ,  H01L51/50

    Abstract: A display device includes: a substrate; first and second transistors provided on the substrate to be spaced apart from each other, the first and second transistors being electrically connected to each other; and a display unit electrically connected to the first transistor, wherein the first transistor includes a first semiconductor layer including crystalline silicon, a first gate electrode, a first source electrode, and a first drain electrode, wherein the second transistor includes a second semiconductor layer including an oxide semiconductor, a second gate electrode, a second source electrode, and a second drain electrode, wherein each of the second source electrode and the second drain electrode includes a first layer that includes molybdenum and is provided on the second semiconductor layer, a second layer that includes aluminum and is provided on the first layer, and a third layer that includes titanium and is provided on the second layer.

    Thin film transistor array panel
    6.
    发明授权
    Thin film transistor array panel 有权
    薄膜晶体管阵列面板

    公开(公告)号：US08853703B2

    公开(公告)日：2014-10-07

    申请号：US13830269

    申请日：2013-03-14

    Applicant: Samsung Display Co., Ltd.

    Inventor： Ji-Young Park ,  Yu-Gwang Jeong ,  Sang Gab Kim ,  Joon Geol Lee

    IPC: H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L29/10 ,  H01L31/0376 ,  H01L31/20 ,  H01L31/062 ,  H01L31/113 ,  H01L29/786 ,  H01L29/66

    CPC classification number: H01L27/1259 ,  G02F1/134363 ,  G02F1/136227 ,  H01L27/124 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78678

    Abstract: A thin film transistor array panel includes a substrate, gate lines, each including a gate pad, a gate insulating layer, data lines, each including a data pad connected to a source and drain electrode, a first passivation layer disposed on the data lines and the drain electrode, a first electric field generating electrode, a second passivation layer disposed on the first electric field generating electrode, and a second electric field generating electrode. The gate insulating layer and the first and second passivation layers include a first contact hole exposing a part of the gate pad, the first and second passivation layers include a second contact hole exposing a part of the data pad, and at least one of the first and second contact holes have a positive taper structure having a wider area at an upper side than at a lower side.

    Abstract translation: 薄膜晶体管阵列面板包括基板，栅极线，每个栅极线包括栅极焊盘，栅极绝缘层，数据线，每条数据线包括连接到源极和漏极的数据焊盘，设置在数据线上的第一钝化层和 漏电极，第一电场产生电极，设置在第一电场产生电极上的第二钝化层和第二电场产生电极。 栅极绝缘层和第一和第二钝化层包括暴露栅极焊盘的一部分的第一接触孔，第一和第二钝化层包括暴露数据焊盘的一部分的第二接触孔，以及第一和第二钝化层中的至少一个 并且第二接触孔具有在上侧具有比在下侧更宽的面积的正锥形结构。

    Display device
    7.
    发明授权
    Display device 有权

    公开(公告)号：US11380753B2

    公开(公告)日：2022-07-05

    申请号：US16899782

    申请日：2020-06-12

    Applicant: Samsung Display Co., LTD.

    Inventor： Sang Gab Kim ,  Tae Sung Kim ,  Joon Geol Lee ,  Hyun Min Cho ,  Dae Won Choi ,  Yun Jong Yeo

    IPC: H01L27/32 ,  H01L51/00

    Abstract: A display device includes a base substrate; an organic layer disposed on the base substrate; and a first conductive layer disposed on the organic layer, wherein the first conductive layer includes a plurality of stacked films, the plurality of stacked films include a first conductive film disposed directly on the organic layer and a second conductive film disposed on the first conductive film, and the first conductive film has an oxygen concentration higher than an oxygen concentration of the second conductive film.

    Display device and manufacturing method thereof
    9.
    发明授权
    Display device and manufacturing method thereof 有权

    公开(公告)号：US11101336B2

    公开(公告)日：2021-08-24

    申请号：US16260293

    申请日：2019-01-29

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Yu-Gwang Jeong ,  Su Bin Bae ,  Joon Geol Lee ,  Sang Gab Kim ,  Shin Il Choi

    IPC: H01L29/08 ,  H01L27/32 ,  H01L29/786 ,  H01L29/45 ,  H01L29/417 ,  H01L27/12

    Abstract: A display device and a method for manufacturing a display device, the device including a semiconductor layer on a substrate; a gate insulation layer and an interlayer insulation layer that overlap the semiconductor layer; contact holes that penetrate the gate insulation layer and the interlayer insulation layer; a source electrode and a drain electrode that are electrically connected with the semiconductor layer through the contact holes; a light emitting diode that is connected with the drain electrode; and first spacers and second spacers between the source electrode and the interlayer insulation layer and between the drain electrode and the interlayer insulation layer in the contact holes.

    THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
    10.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF 有权
    薄膜晶体管阵列及其制造方法

    公开(公告)号：US20140117361A1

    公开(公告)日：2014-05-01

    申请号：US13830269

    申请日：2013-03-14

    Applicant: Samsung Display Co., Ltd.

    Inventor： Ji-Young Park ,  Yu-Gwang Jeong ,  Sang Gab Kim ,  Joon Geol Lee

    IPC: H01L29/786 ,  H01L29/66

    CPC classification number: H01L27/1259 ,  G02F1/134363 ,  G02F1/136227 ,  H01L27/124 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78678

    Abstract: A thin film transistor array panel includes a substrate, gate lines, each including a gate pad, a gate insulating layer, data lines, each including a data pad connected to a source and drain electrode, a first passivation layer disposed on the data lines and the drain electrode, a first electric field generating electrode, a second passivation layer disposed on the first electric field generating electrode, and a second electric field generating electrode. The gate insulating layer and the first and second passivation layers include a first contact hole exposing a part of the gate pad, the first and second passivation layers include a second contact hole exposing a part of the data pad, and at least one of the first and second contact holes have a positive taper structure having a wider area at an upper side than at a lower side.

    Abstract translation: 薄膜晶体管阵列面板包括基板，栅极线，每个栅极线包括栅极焊盘，栅极绝缘层，数据线，每条数据线包括连接到源极和漏极的数据焊盘，设置在数据线上的第一钝化层和 漏电极，第一电场产生电极，设置在第一电场产生电极上的第二钝化层和第二电场产生电极。 栅极绝缘层和第一和第二钝化层包括暴露栅极焊盘的一部分的第一接触孔，第一和第二钝化层包括暴露数据焊盘的一部分的第二接触孔，以及第一和第二钝化层中的至少一个 并且第二接触孔具有在上侧具有比在下侧更宽的面积的正锥形结构。

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