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公开(公告)号：US11682353B2
公开(公告)日：2023-06-20
申请号：US17856886
申请日：2022-07-01
发明人： Ju-Won Yoon , Gun Hee Kim , Sang Ho Park , Seung Chan Lee , Joo Hee Jeon
IPC分类号： G09G3/3258 , G09G3/3266 , G09G3/3291 , H01L27/32 , H01L51/52 , G09G3/3233
CPC分类号： G09G3/3258 , G09G3/3233 , G09G3/3266 , G09G3/3291 , H01L27/3258 , H01L27/3265 , H01L27/3276 , H01L51/5253 , G09G2300/0426 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2320/0233
摘要： An organic light emitting diode display includes: a substrate; an overlapping layer on the substrate; a pixel on the substrate and the overlapping layer; and a scan line, a data line, a driving voltage line, and an initialization voltage line that are connected to the pixel. The pixel includes: an organic light emitting diode; a second transistor connected to the scan line and the data line; a driving transistor including a gate electrode, an input terminal, and an output terminal, and to apply a current to the organic light emitting diode from the output terminal; and a voltage application transistor to apply a voltage to the overlapping layer. An output of the second transistor is connected to the input terminal of the driving transistor, and the overlapping layer is between the driving transistor and the substrate while overlapping with the driving transistor on a plane.
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公开(公告)号：US11594639B2
公开(公告)日：2023-02-28
申请号：US17115470
申请日：2020-12-08
发明人： Yong Su Lee , Yoon Ho Khang , Dong Jo Kim , Hyun Jae Na , Sang Ho Park , Se Hwan Yu , Chong Sup Chang , Dae Ho Kim , Jae Neung Kim , Myoung Geun Cha , Sang Gap Kim , Yu-Gwang Jeong
IPC分类号： H01L27/00 , H01L29/00 , H01L29/786 , H01L27/12 , H01L29/66 , H01L29/417 , H01L27/32
摘要： A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
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公开(公告)号：US11552144B2
公开(公告)日：2023-01-10
申请号：US17579699
申请日：2022-01-20
发明人： Sang Ho Park , Yeon Hong Kim , Jin Yeong Kim , Jin Taek Kim , Soo Hyun Moon , Mi Jin Park , Tae Hoon Yang , Sung-Jin Lee , Jin Woo Lee , Kwang Taek Hong
IPC分类号： G09G3/30 , H01L27/32 , G09G3/3233 , G09G3/3258 , H01L27/12
摘要： A light emitting diode display device including: an organic light emitting diode including an anode electrode; a first transistor for providing a current to the anode electrode of the organic light emitting diode; a second transistor for transmitting a voltage to a gate electrode of the first transistor; a first capacitor for storing the voltage transmitted to the gate electrode of the first transistor; and a second capacitor disposed between a first electrode of the second transistor and a data line, wherein the first electrode of the second transistor is directly connected to the anode electrode of the organic light emitting diode.
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公开(公告)号：US11380263B2
公开(公告)日：2022-07-05
申请号：US17254216
申请日：2019-05-22
发明人： Ju-Won Yoon , Gun Hee Kim , Sang Ho Park , Seung Chan Lee , Joo Hee Jeon
IPC分类号： G09G3/3258 , G09G3/3291 , G09G3/3266 , H01L27/32 , H01L51/52 , G09G3/3233
摘要： An organic light emitting diode display includes: a substrate; an overlapping layer on the substrate; a pixel on the substrate and the overlapping layer; and a scan line, a data line, a driving voltage line, and an initialization voltage line that are connected to the pixel. The pixel includes: an organic light emitting diode; a second transistor connected to the scan line and the data line; a driving transistor including a gate electrode, an input terminal, and an output terminal, and to apply a current to the organic light emitting diode from the output terminal; and a voltage application transistor to apply a voltage to the overlapping layer. An output of the second transistor is connected to the input terminal of the driving transistor, and the overlapping layer is between the driving transistor and the substrate while overlapping with the driving transistor on a plane.
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公开(公告)号：US09620609B2
公开(公告)日：2017-04-11
申请号：US14830091
申请日：2015-08-19
发明人： Hyun Jae Na , Yoon Ho Khang , Sang Ho Park , Dong Hwan Shim , Se Hwan Yu , Yong Su Lee , Myoung Geun Cha
IPC分类号： H01L29/786 , H01L27/12 , H01L29/49 , H01L29/51 , H01L33/34
CPC分类号： H01L29/4908 , H01L29/518 , H01L29/78603 , H01L29/78633
摘要： A thin film transistor display panel according to an exemplary embodiment of the present invention includes a substrate, a first insulating layer formed on the substrate, a semiconductor layer formed on the first insulating layer, a second insulating layer formed on the semiconductor layer, and a gate electrode formed on the second insulating layer, in which the first insulating layer includes a light blocking material, and a thickness of the first insulating layer is greater than or equal to a thickness of the second insulating layer.
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公开(公告)号：US09244320B2
公开(公告)日：2016-01-26
申请号：US13840832
申请日：2013-03-15
发明人： Dae Hwan Jang , Sang Ho Park , Dong Jo Kim , Jung Gun Nam , Dae-Young Lee , Gug Rae Jo
IPC分类号： G02F1/136 , G02F1/1335 , G02F1/1362
CPC分类号： G02F1/136209 , G02F1/133528 , G02F1/133611 , G02F2001/133548
摘要： A liquid crystal display includes a transparent insulation substrate, a first polarizer, and a semiconductor layer, a thin film transistor, and a backlight unit. The first polarizer is disposed on the transparent insulation substrate. The first polarizer includes a light blocking film and metal wires. The semiconductor layer, disposed on the light blocking film, has a perimeter aligned with a perimeter of the light blocking film. The thin film transistor, disposed on the semiconductor layer, includes a source region and a drain region disposed in the semiconductor layer. The backlight unit, disposed under the transparent insulation substrate, provides light to the transparent insulation substrate. The blocking film reflects substantially all of the light. Gaps are disposed between the metal wires.
摘要翻译： 液晶显示器包括透明绝缘衬底，第一偏振器和半导体层，薄膜晶体管和背光单元。 第一偏振器设置在透明绝缘基板上。 第一偏振片包括遮光膜和金属线。 设置在遮光膜上的半导体层具有与遮光膜的周边对准的周边。 设置在半导体层上的薄膜晶体管包括设置在半导体层中的源极区域和漏极区域。 设置在透明绝缘基板下方的背光单元向透明绝缘基板提供光。 阻挡膜基本上反射所有的光。 间隙设置在金属线之间。
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公开(公告)号：US12087865B2
公开(公告)日：2024-09-10
申请号：US18176454
申请日：2023-02-28
发明人： Yong Su Lee , Yoon Ho Khang , Dong Jo Kim , Hyun Jae Na , Sang Ho Park , Se Hwan Yu , Chong Sup Chang , Dae Ho Kim , Jae Neung Kim , Myoung Geun Cha , Sang Gab Kim , Yu-Gwang Jeong
IPC分类号： H01L27/12 , H01L29/417 , H01L29/66 , H01L29/786 , H10K59/121
CPC分类号： H01L29/78633 , H01L27/1225 , H01L27/124 , H01L27/1288 , H01L29/41733 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78696 , H10K59/1213
摘要： A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
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公开(公告)号：US11967670B2
公开(公告)日：2024-04-23
申请号：US17177848
申请日：2021-02-17
发明人： An Na Ryu , Sung Hoon Kim , Sang Ho Park
CPC分类号： H01L33/62 , H01L27/156 , H01L33/38
摘要： A display device includes a first pixel and a second pixel adjacent to each other in a first direction, first voltage wires disposed in the first pixel and the second pixel in a second direction, a second wire disposed along a boundary between the first pixel and the second pixel in the second direction, first electrodes disposed between the first voltage wires and the second wire in the first pixel an the second pixel, a second electrode disposed between and spaced apart from the first electrodes in the first pixel and the second pixel, and light-emitting elements disposed at each of the first pixel and the second pixel and disposed on the first electrodes and the second electrode, wherein the first voltage wires, the first electrodes, and the light-emitting elements are symmetric with respect to the second wire.
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公开(公告)号：US11233104B2
公开(公告)日：2022-01-25
申请号：US16937035
申请日：2020-07-23
发明人： Sang Ho Park , Yeon Hong Kim , Jin Yeong Kim , Jin Taek Kim , Soo hyun Moon , Mi Jin Park , Tae Hoon Yang , Sung-Jin Lee , Jin Woo Lee , Kwang Taek Hong
IPC分类号： G09G3/30 , H01L27/32 , G09G3/3233 , G09G3/3258 , H01L27/12
摘要： A light emitting diode display device including: an organic light emitting diode including an anode electrode; a first transistor for providing a current to the anode electrode of the organic light emitting diode; a second transistor for transmitting a voltage to a gate electrode of the first transistor; a first capacitor for storing the voltage transmitted to the gate electrode of the first transistor; and a second capacitor disposed between a first electrode of the second transistor and a data line, wherein the first electrode of the second transistor is directly connected to the anode electrode of the organic light emitting diode.
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公开(公告)号：US11217696B2
公开(公告)日：2022-01-04
申请号：US16354396
申请日：2019-03-15
发明人： Do Hyung Kim , Gun Hee Kim , Hyeon Sik Kim , Sang Ho Park , Joo Hee Jeon
IPC分类号： H01L29/12 , H01L29/786 , H01L29/417 , H01L27/32 , H01L29/08
摘要： A thin film transistor array panel includes a substrate, a first gate electrode on the substrate, a semiconductor layer on the first gate electrode, the semiconductor layer including a drain region, a source region, a lightly doped drain (LDD) region, and a channel region, a second gate electrode on the semiconductor layer, the first gate electrode and the second gate electrode each overlapping the channel region, a control gate electrode that overlaps the LDD region, and a source electrode and a drain electrode respectively connected with the source region and the drain region of the semiconductor layer.
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