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16 条记录 (耗时 0.013 秒)

    Switching circuit and RF switch including the same
    2.
    发明授权
    Switching circuit and RF switch including the same 有权
    开关电路和射频开关包括相同的

    公开(公告)号：US09124353B2

    公开(公告)日：2015-09-01

    申请号：US14258850

    申请日：2014-04-22

    申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.

    发明人： Suk Chan Kang ,  Ho Kwon Yoon ,  Jeong Hoon Kim ,  Joong Jin Nam ,  Kyu Jin Choi ,  Kwang Du Lee ,  Jae Hyouck Choi ,  Kyung Hee Hong

    IPC分类号： H04B1/44 ,  H03K17/687

    CPC分类号： H04B1/44 ,  H03K17/687

    摘要： A switching circuit may include: the switching circuit includes a switching circuit unit including a first transistor and a second transistor connected to each other in series, the second transistor receiving a first control signal through a control terminal thereof, and an inverter connected between a control terminal of the first transistor and a first terminal of the first transistor. The inverter receives a second control signal and maintains a gate-source voltage level of the first transistor to a threshold voltage level of the first transistor or less, and levels of the first and second control signals are logically complementary to each other.

    摘要翻译： 开关电路可以包括：开关电路包括开关电路单元，其包括串联连接的第一晶体管和第二晶体管，第二晶体管通过其控制端接收第一控制信号，以及逆变器，其连接在控制 第一晶体管的端子和第一晶体管的第一端子。 逆变器接收第二控制信号，并将第一晶体管的栅极 - 源极电压电平维持在第一晶体管的阈值电压以下，第一和第二控制信号的电平在逻辑上彼此互补。

    Switch circuit and SPDT switch circuit
    3.
    发明授权
    Switch circuit and SPDT switch circuit 有权

    公开(公告)号：US09705492B2

    公开(公告)日：2017-07-11

    申请号：US14140035

    申请日：2013-12-24

    申请人： Samsung Electro-Mechanics Co., Ltd.

    发明人： Jae Hyouck Choi ,  Sung Hwan Park

    IPC分类号： H03K17/00 ,  H03K17/693

    CPC分类号： H03K17/693 ,  Y10T307/747

    摘要： The present invention relates to a switch circuit and a single pole double throw (SPDT) circuit. The switch circuit includes: a MOS transistor transferring or blocking a signal according to a turn on/off operation thereof; a gate resistor connected to a gate of the MOS transistor; and a variable gate resistor circuit increasing a resistance value of the gate resistor when the MOS transistor is changed from a turn-off state to a turn-on state.

    Switching circuit and RF switch including the same
    4.
    发明授权
    Switching circuit and RF switch including the same 有权
    开关电路和射频开关包括相同的

    公开(公告)号：US09331690B2

    公开(公告)日：2016-05-03

    申请号：US14320837

    申请日：2014-07-01

    申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.

    发明人： Jae Hyouck Choi ,  Kyu Jin Choi ,  Suk Chan Kang ,  Jeong Hoon Kim

    IPC分类号： H03K17/687

    CPC分类号： H03K17/6871 ,  H03K17/693

    摘要： A switching circuit may include a switching circuit unit; a reference voltage unit connected between the switching circuit unit and a signal input terminal and providing a preset reference voltage; and a voltage generating unit dividing a first control voltage provided to the switching circuit unit by a preset magnitude to generate a second control voltage corresponding to the reference voltage, and providing the second control voltage to bodies of the plurality of respective switching devices.

    摘要翻译： 开关电路可以包括开关电路单元; 连接在开关电路单元和信号输入端子之间并提供预设参考电压的参考电压单元; 以及电压产生单元，将提供给所述开关电路单元的第一控制电压分开预定的量值，以产生对应于所述参考电压的第二控制电压，以及将所述第二控制电压提供给所述多个开关装置的主体。

    Tunable capacitance control circuit and tunable capacitance control method
    6.
    发明授权
    Tunable capacitance control circuit and tunable capacitance control method 有权
    可调谐电容控制电路和可调谐电容控制方法

    公开(公告)号：US08803564B2

    公开(公告)日：2014-08-12

    申请号：US13773524

    申请日：2013-02-21

    申请人： Samsung Electro-Mechanics Co., Ltd.

    发明人： Jae Hyouck Choi ,  Sung Hwan Park ,  Jeong Hoon Kim ,  Chan Yong Jeong ,  Sang Wook Park

    IPC分类号： H03C3/00

    CPC分类号： H03K3/012 ,  H03J3/20 ,  H03J2200/10

    摘要： Disclosed herein are a tunable capacitance control circuit and a tunable capacitance control method. The tunable capacitance control method is a tunable capacitance control method by a tunable capacitance control circuit including an MIM capacitor, a plurality of FET switches, and a control unit, wherein the control unit outputs control signals allowing only one of the plurality of (n) FET switches to be switched on and the remaining (n−1) FET switches to be switched off to the plurality of FET switches, thereby obtaining a desired tunable capacitance value.

    摘要翻译： 这里公开了可调电容控制电路和可调电容控制方法。 可调谐电容控制方法是通过包括MIM电容器，多个FET开关和控制单元的可调电容控制电路的可调电容控制方法，其中控制单元输出允许多个（n） FET开关导通，其余（n-1）FET开关切换到多个FET开关，从而获得所需的可调谐电容值。

    Front-end module
    7.
    发明授权
    Front-end module 有权

    公开(公告)号：US11502710B2

    公开(公告)日：2022-11-15

    申请号：US16933054

    申请日：2020-07-20

    申请人： Samsung Electro-Mechanics Co., Ltd.

    发明人： Kang Ta Jo ,  Seong Jong Cheon ,  Se Jong Kim ,  Ho Taek Song ,  Jang Ho Park ,  Yoo Sam Na ,  Jae Hyouck Choi ,  Young Sik Hur

    IPC分类号： H04B1/10 ,  H01Q1/38 ,  H04B1/04 ,  H01Q1/22

    摘要： A front-end module includes: a substrate including a first connection member in which at least one first insulating layer and at least one first wiring layer are alternately stacked, a second connection member in which at least one second insulating layer and at least one second wiring layer are alternately stacked, and a core member disposed between the first and second connection members; a radio-frequency component mounted on a surface of the substrate and configured to amplify a main band of an input RF signal or filter bands outside the main band; an inductor disposed on a surface of the core member and electrically connected to the radio-frequency component; and a ground plane disposed on another surface of the core member. The core member includes a core insulating layer thicker than an insulating layer among at least one first insulating layer and the at least one second insulating layer.

    Power amplifying apparatus with asymmetrical amplification structure and linearity
    8.
    发明授权
    Power amplifying apparatus with asymmetrical amplification structure and linearity 有权

    公开(公告)号：US10707820B2

    公开(公告)日：2020-07-07

    申请号：US16161236

    申请日：2018-10-16

    申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.

    发明人： Kyu Jin Choi ,  Jae Hyouck Choi

    IPC分类号： H03F3/38 ,  H03F3/21 ,  H03G3/30 ,  H03F1/02 ,  H03F1/32

    摘要： A power amplifying apparatus includes a first bias circuit that generates a first bias current having a first magnitude, a first amplification circuit connected between a first node and a second node, and that receives the first bias current, amplifies a signal input through the first node, and outputs a first amplified signal to the second node, a second bias circuit that generates a second bias current having a second magnitude that is different from the first magnitude of the first bias current, and a second amplification circuit connected in parallel with the first amplification circuit between the first node and the second node, and that receives the second bias current, amplifies the signal input through the first node, and outputs a second amplified signal to the second node, wherein the second amplification circuit may have a size that is different from a size of the first amplification circuit.

    RF switch
    10.
    发明授权
    RF switch 有权
    射频开关

    公开(公告)号：US09312909B2

    公开(公告)日：2016-04-12

    申请号：US14316505

    申请日：2014-06-26

    申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.

    发明人： Suk Chan Kang ,  Kyu Jin Choi ,  Jae Hyouck Choi ,  Jeong Hoon Kim

    IPC分类号： H04B1/44 ,  H04B17/00 ,  H04B1/525

    CPC分类号： H04B1/525

    摘要： A RF (Radio Frequency) switch may include: a common port; a first switching unit including a plurality of first switching devices; a second switching; a negative voltage generating unit sensing the high frequency signal from the common port and rectifying the sensed high frequency signal to generate a negative voltage; and a logic circuit unit controlling switching operations of the first and second switching units using the negative voltage provided from the negative voltage generating unit and a positive voltage provided from the outside.

    摘要翻译： RF（射频）开关可以包括：公共端口; 包括多个第一开关装置的第一开关单元; 第二次切换; 负电压产生单元，感测来自公共端口的高频信号，并对感测到的高频信号进行整流以产生负电压; 以及逻辑电路单元，其使用从负电压产生单元提供的负电压和从外部提供的正电压来控制第一和第二开关单元的开关操作。