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公开(公告)号：US20240080011A1
公开(公告)日：2024-03-07
申请号：US18112609
申请日：2023-02-22
发明人： Moon Chul LEE , Jae Hyoung GIL , Kwang Su KIM , Sung Jun LEE , Yong Suk KIM , Dong Hyun PARK , Tae Kyung LEE
摘要： A bulk-acoustic wave (BAW) resonator includes a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion extending externally from the central portion, and an insertion layer and a loss prevention film are disposed in the extension portion between the substrate and the second electrode. The loss prevention film is formed to have a thickness of 50 Å to 500 Å. The insertion layer is stacked on the loss prevention film, and has a side surface opposing the central portion, the side surface is formed as a first inclined surface having a first inclination angle. The loss prevention film has a side surface opposing the central portion, the side surface is formed as a second inclined surface having a second inclination angle. The second inclination angle is formed to be greater than the first inclination angle.
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公开(公告)号：US20230370048A1
公开(公告)日：2023-11-16
申请号：US18101267
申请日：2023-01-25
发明人： Kwang Su KIM , Jae Hyoung GIL , Moon Chul LEE , Yong Suk KIM , Dong Hyun PARK , Tae Kyung LEE
CPC分类号： H03H9/174 , H03H9/131 , H03H9/02015 , H03H9/173
摘要： A bulk-acoustic wave resonator includes a substrate; a lower electrode, disposed on the substrate, comprising a first inclined surface and a second inclined surface; and an insertion layer disposed on an edge of the lower electrode. The first inclined surface extends from an inclined surface of the insertion layer in a region disposed inside the insertion layer. The second inclined surface extends from the first inclined surface in a region inside a region of the first inclined surface.
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公开(公告)号：US20210313950A1
公开(公告)日：2021-10-07
申请号：US16930885
申请日：2020-07-16
发明人： Won HAN , Tae Yoon KIM , Chang Hyun LIM , Sang Uk SON , Jae Hyoung GIL , Dae Hun JEONG
摘要： A bulk-acoustic wave resonator includes: a first electrode disposed above a substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; and a second electrode disposed to cover at least a portion of the piezoelectric layer. A plurality of steps are formed in any one or any combination of any two or more of the first electrode, the piezoelectric layer, and the second electrode in an active region in which the first electrode, the piezoelectric layer, and the second electrode are all disposed to overlap one another.
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公开(公告)号：US20230208381A1
公开(公告)日：2023-06-29
申请号：US17994706
申请日：2022-11-28
发明人： Moon Chul LEE , Kwang Su KIM , Jin Woo YI , Jae Hyoung GIL , Yong Suk KIM , Dong Hyun PARK
CPC分类号： H03H9/02015 , H03H9/132 , H03H9/131 , H03H9/54
摘要： A bulk acoustic resonator includes a substrate, a frequency control layer changing a resonant frequency or antiresonant frequency of the bulk acoustic resonator according to a thickness of the frequency control layer, a piezoelectric layer disposed between the frequency control layer and the substrate, a first electrode disposed between the piezoelectric layer and the substrate, a second electrode disposed between the piezoelectric layer and the frequency control layer, a metal layer connected to the first electrode or the second electrode, and a protective layer disposed between the second electrode and the frequency control layer, wherein the frequency control layer covers a larger area than that of the protective layer.
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公开(公告)号：US20210313955A1
公开(公告)日：2021-10-07
申请号：US16942913
申请日：2020-07-30
发明人： Chang Hyun LIM , Sang Hyun YI , Yong Suk KIM , Sung Jun LEE , Jae Hyoung GIL , Dong Hyun PARK
摘要： A bulk acoustic resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; a second electrode disposed to cover at least a portion of the piezoelectric layer; a metal pad connected to the first electrode and the second electrode; and a protective layer disposed to cover at least the metal pad.
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公开(公告)号：US20230125049A1
公开(公告)日：2023-04-20
申请号：US17675058
申请日：2022-02-18
发明人： Hyun Min HWANG , Won HAN , Jeong Hoon RYOU , Jae Hyoung GIL , Dong Hoe KIM
摘要： A bulk acoustic wave filter includes series resonators connected to a series arm, and parallel resonators connected to a parallel arm connected to the series arm. Two or more of the series resonators are disposed in parallel on the series arm, and each includes a substrate, a lower electrode on the substrate, a piezoelectric layer on the lower electrode, and an upper electrode on the piezoelectric layer, wherein, when an active region in which the lower electrode, the piezoelectric layer, and the upper electrode overlap each other is viewed from above, a centroid of the active region and a center of a rectangle defining an aspect ratio of the active region match each other, and when the active region is viewed from above, the active region has a shape of polygon symmetrical with respect to at least one axis passing through a center of the rectangle defining the aspect ratio.
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公开(公告)号：US20230072487A1
公开(公告)日：2023-03-09
申请号：US17676905
申请日：2022-02-22
发明人： Won HAN , Hwa Sun LEE , Moon Chul LEE , Jeong Hoon RYOU , Tae Yoon KIM , Sang Kee YOON , Yong Suk KIM , Joung Hun KIM , Tae Kyung LEE , Jae Hyoung GIL
摘要： A bulk acoustic wave resonator is provided. The bulk acoustic wave resonator includes a board; a resonant portion including a first electrode, a piezoelectric layer, and a second electrode, and disposed on the board, and a temperature compensation layer disposed on the resonant portion, wherein the temperature compensation layer includes a temperature compensation portion formed of a dielectric and a loss compensation portion formed of a material different from a material of the temperature compensation portion, and wherein each of the temperature compensation portion and the loss compensation portion includes a plurality of linear patterns, and the linear patterns of the temperature compensation portion and the linear patterns of the loss compensation portion are alternately disposed.
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公开(公告)号：US20180062620A1
公开(公告)日：2018-03-01
申请号：US15462110
申请日：2017-03-17
发明人： Tae Kyung LEE , Yong Jin KANG , Moon Chul LEE , Jae Hyoung GIL , Chang Hyun LIM , Tae Yoon KIM
IPC分类号： H03H9/60 , H03H9/54 , H01L41/047
CPC分类号： H03H9/60 , H01L41/0477 , H03H3/02 , H03H9/547
摘要： A bulk-acoustic wave filter device includes: a lower electrode layer disposed on the substrate; a bonding part disposed on the lower electrode layer, at an edge of the substrate; a ground part spaced apart from the bonding part; and a flow suppressing part disposed between the bonding part and the ground part, and offset with respect to the bonding part and the ground part.
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公开(公告)号：US20220085791A1
公开(公告)日：2022-03-17
申请号：US17231330
申请日：2021-04-15
发明人： Tae Yoon KIM , Won HAN , Sang Hyun YI , Jae Hyoung GIL , Sang Kee YOON , Moon Chul LEE
摘要： A bulk-acoustic wave resonator includes: a substrate; a first electrode disposed on the substrate; a cavity disposed between the substrate and the first electrode; a piezoelectric layer covering at least a portion of the first electrode; a second electrode covering at least a portion of the piezoelectric layer; an insertion layer disposed between the first electrode and the piezoelectric layer; and a lower frame disposed in the cavity. At least a portion of the lower frame overlaps the insertion layer.
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公开(公告)号：US20190356293A1
公开(公告)日：2019-11-21
申请号：US16400052
申请日：2019-05-01
发明人： Yong Suk KIM , Moon Chul LEE , Sung Jun LEE , Chang Hyun LIM , Jae Hyoung GIL , Sang Hyun YI
摘要： A bulk acoustic wave resonator includes a substrate; a lower electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the lower electrode; an upper electrode disposed to cover at least a portion of the piezoelectric layer; and a passivation layer disposed to cover at least a portion of the upper electrode, wherein the passivation layer includes a non-trimming-processed portion disposed outside an active region of the bulk acoustic wave resonator in which portions of the lower electrode, the piezoelectric layer, and the upper electrode overlap, and having a thickness that is thicker than a thickness of a portion of the passivation layer disposed in the active region.
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