公开(公告)号：US10008600B2

公开(公告)日：2018-06-26

申请号：US15685459

申请日：2017-08-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Kyu Kim ,  Dong Chan Suh ,  Kwan Heum Lee ,  Byeong Chan Lee ,  Cho Eun Lee ,  Su Jin Jung ,  Gyeom Kim ,  Ji Eon Yoon

IPC: H01L29/08 ,  H01L29/78 ,  H01L29/165 ,  H01L29/417

CPC classification number: H01L29/7848 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/41766 ,  H01L29/7834

Abstract: A semiconductor device may include: a semiconductor substrate, a device isolating layer embedded within the semiconductor substrate and defining an active region, a channel region formed in the active region, a gate electrode disposed above the channel region, a gate insulating layer provided between the channel region and the gate electrode, and a silicon germanium epitaxial layer adjacent to the channel region within the active region and including a first epitaxial layer containing a first concentration of germanium, a second epitaxial layer containing a second concentration of germanium, higher than the first concentration, and a third epitaxial layer containing a third concentration of germanium, lower than the second concentration, the first to third epitaxial layers being sequentially stacked on one another in that order.

公开(公告)号：US09761719B2

公开(公告)日：2017-09-12

申请号：US14741454

申请日：2015-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Kyu Kim ,  Dong Chan Suh ,  Kwan Heum Lee ,  Byeong Chan Lee ,  Cho Eun Lee ,  Su Jin Jung ,  Gyeom Kim ,  Ji Eon Yoon

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/417 ,  H01L29/08 ,  H01L29/165

CPC classification number: H01L29/7848 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/41766 ,  H01L29/7834

Abstract: A semiconductor device may include: a semiconductor substrate, a device isolating layer embedded within the semiconductor substrate and defining an active region, a channel region formed in the active region, a gate electrode disposed above the channel region, a gate insulating layer provided between the channel region and the gate electrode, and a silicon germanium epitaxial layer adjacent to the channel region within the active region and including a first epitaxial layer containing a first concentration of germanium, a second epitaxial layer containing a second concentration of germanium, higher than the first concentration, and a third epitaxial layer containing a third concentration of germanium, lower than the second concentration, the first to third epitaxial layers being sequentially stacked on one another in that order.

公开(公告)号：US09881838B2

公开(公告)日：2018-01-30

申请号：US15413472

申请日：2017-01-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoon Hae Kim ,  Jin Wook Lee ,  Jong Ki Jung ,  Myung Il Kang ,  Kwang Yong Yang ,  Kwan Heum Lee ,  Byeong Chan Lee

IPC: H01L21/82 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/308 ,  H01L29/08 ,  H01L21/311 ,  H01L21/3105 ,  H01L29/78 ,  H01L27/088 ,  H01L29/165 ,  H01L27/11 ,  H01L21/8238 ,  H01L27/092

CPC classification number: H01L21/823431 ,  H01L21/308 ,  H01L21/31053 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/823418 ,  H01L21/823437 ,  H01L21/823468 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823864 ,  H01L27/0207 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/092 ,  H01L27/0924 ,  H01L27/1104 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7848

Abstract: A semiconductor device includes a substrate having a first region and a second region, a plurality of first gate structures in the first region, the first gate structures being spaced apart from each other by a first distance, a plurality of second gate structures in the second region, the second gate structures being spaced apart from each other by a second distance, a first spacer on sidewalls of the first gate structures, a dielectric layer on the first spacer, a second spacer on sidewalls of the second gate structures, and a third spacer on the second spacer.