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    LOW RESISTIVITY INTERCONNECTS FOR INTEGRATED CIRCUIT AND METHODS OF MANUFACTURING THE SAME
    2.
    发明申请
    LOW RESISTIVITY INTERCONNECTS FOR INTEGRATED CIRCUIT AND METHODS OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20200235055A1

    公开(公告)日：2020-07-23

    申请号：US16410787

    申请日：2019-05-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ganesh Hegde ,  Harsono S. Simka

    IPC: H01L23/532 ,  H01L21/768

    Abstract: A method of forming an interconnect for an integrated circuit includes: identifying an interconnect barrier material, identifying a plurality of potential dopant elements, creating an ensemble of potential barrier structures including the interconnect barrier material doped at a plurality of doping positions and a plurality of doping amounts for each of the plurality of potential dopant elements, calculating a density of states for each of the barrier structures of the ensemble, selecting a dopant element and a doping amount based on the density of states, and depositing a barrier layer including an alloy, the alloy including the interconnect barrier material and the selected dopant element at the selected doping amount.

    METHOD AND SYSTEM FOR PROVIDING A REVERSE-ENGINEERING RESISTANT HARDWARE EMBEDDED SECURITY MODULE
    3.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING A REVERSE-ENGINEERING RESISTANT HARDWARE EMBEDDED SECURITY MODULE 审中-公开

    公开(公告)号：US20190318998A1

    公开(公告)日：2019-10-17

    申请号：US16453475

    申请日：2019-06-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Harsono S. Simka ,  Ganesh Hegde ,  Joon Goo Hong ,  Rwik Sengupta ,  Mark S. Rodder

    IPC: H01L23/00 ,  H01L23/522 ,  H01L27/02

    Abstract: A hardware-embedded security system is described. The system includes connective components, circuit elements and an insulator. The connective components include a variable conductivity layer that is conductive for a first stoichiometry and insulating for a second stoichiometry. A first portion of the circuit elements are connected to a first portion of the connective components and are active. A the second portion of the circuit elements are connected to a second portion of the connective components and are inactive. The insulator is adjacent to at least a portion of each of the connective components. The first stoichiometry is indistinguishable from the second stoichiometry via optical imaging and electron imaging of a portion of the insulator and the variable conductivity layer.

    Low resistivity interconnects with doped barrier layer for integrated circuits
    5.
    发明授权
    Low resistivity interconnects with doped barrier layer for integrated circuits 有权

    公开(公告)号：US11043454B2

    公开(公告)日：2021-06-22

    申请号：US16410787

    申请日：2019-05-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ganesh Hegde ,  Harsono S. Simka

    IPC: H01L23/532 ,  H01L21/768

    Abstract: A method of forming an interconnect for an integrated circuit includes: identifying an interconnect barrier material, identifying a plurality of potential dopant elements, creating an ensemble of potential barrier structures including the interconnect barrier material doped at a plurality of doping positions and a plurality of doping amounts for each of the plurality of potential dopant elements, calculating a density of states for each of the barrier structures of the ensemble, selecting a dopant element and a doping amount based on the density of states, and depositing a barrier layer including an alloy, the alloy including the interconnect barrier material and the selected dopant element at the selected doping amount.

    GENERATIVE STRUCTURE-PROPERTY INVERSE COMPUTATIONAL CO-DESIGN OF MATERIALS
    6.
    发明申请
    GENERATIVE STRUCTURE-PROPERTY INVERSE COMPUTATIONAL CO-DESIGN OF MATERIALS 有权

    公开(公告)号：US20210103822A1

    公开(公告)日：2021-04-08

    申请号：US16799410

    申请日：2020-02-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ganesh Hegde ,  Harsono S. Simka

    IPC: G06N3/08 ,  G06N3/04 ,  G06N20/20 ,  G06N20/10 ,  G06F30/13 ,  G06F30/27

    Abstract: A method and a system for material design utilizing machine learning are provided, where the underlying joint distribution p(S,P) of structure (S)-property (P) relationships is explicitly learned simultaneously and is utilized to directly generate samples (S,P) in a single step utilizing generative techniques, without any additional processing steps. The subspace of structures that meet or exceed the target for property P is then identified utilizing conditional generation of the distribution (e.g., p(P)), or through randomly generating a large number of samples (S,P) and filtering (e.g., selecting) those that meet target property criteria.

    ELECTRONIC AND ATOMIC STRUCTURE COMPUTATION UTILIZING MACHINE LEARNING
    7.
    发明申请
    ELECTRONIC AND ATOMIC STRUCTURE COMPUTATION UTILIZING MACHINE LEARNING 有权

    公开(公告)号：US20210081834A1

    公开(公告)日：2021-03-18

    申请号：US16798245

    申请日：2020-02-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ganesh Hegde

    IPC: G06N20/00 ,  G06N10/00 ,  G06N3/04

    Abstract: A method for obtaining learned self-consistent electron density and/or derived physical quantities includes: conducting non-self-consistent (NSC) calculation to generate a first NSC dataset X1 from a first plurality of configurations of atoms; conducting self-consistent (SC) calculation to generate a first SC dataset Y1 from the first plurality of configurations of atoms; mapping the first NSC dataset X1 to the first SC dataset Y1 utilizing machine learning algorithm to generate a mapping function F; and generating a learned self-consistent data Y2 from a new NSC data X2 utilizing the mapping function F.

    Low-k dielectric pore sealant and metal-diffusion barrier formed by doping and method for forming the same
    9.
    发明授权
    Low-k dielectric pore sealant and metal-diffusion barrier formed by doping and method for forming the same 有权

    公开(公告)号：US10510665B2

    公开(公告)日：2019-12-17

    申请号：US14931845

    申请日：2015-11-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ganesh Hegde ,  Mark Rodder ,  Jorge Kittl ,  Chris Bowen

    IPC: H01L23/528 ,  H01L23/532 ,  H01L21/225 ,  H01L21/768

    Abstract: A diffusion barrier and a method to form the diffusion bather are disclosed. A trench structure is formed in an Inter Layer Dielectric (ILD). The ILD comprises a dielectric matrix having a first density. A dopant material layer is formed on the trench structure in which the dopant material layer comprises atoms of at least one of a rare-earth element. The ILD and the trench structure are annealed to form a dielectric matrix comprising a second density in one or more regions of the ILD on which the dopant material layer was formed that is greater than the first density. After annealing, the dielectric matrix comprising the second density includes increased bond lengths of oxygen-silicon bonds and/or oxygen-semiconductor bonds, increased bond angles of oxygen-silicon bonds and/or oxygen-semiconductor material bonds, and pores in the dielectric matrix are sealed compared to the dielectric matrix comprising the first density.

    Electronic and atomic structure computation utilizing machine learning
    10.
    发明授权
    Electronic and atomic structure computation utilizing machine learning 有权

    公开(公告)号：US11586982B2

    公开(公告)日：2023-02-21

    申请号：US16798245

    申请日：2020-02-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ganesh Hegde

    IPC: G06F1/18 ,  G06N20/00 ,  G06N3/04 ,  G06N10/00

    Abstract: A method for obtaining learned self-consistent electron density and/or derived physical quantities includes: conducting non-self-consistent (NSC) calculation to generate a first NSC dataset X1 from a first plurality of configurations of atoms; conducting self-consistent (SC) calculation to generate a first SC dataset Y1 from the first plurality of configurations of atoms; mapping the first NSC dataset X1 to the first SC dataset Y1 utilizing machine learning algorithm to generate a mapping function F; and generating a learned self-consistent data Y2 from a new NSC data X2 utilizing the mapping function F.

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