公开(公告)号：US11658024B2

公开(公告)日：2023-05-23

申请号：US17071310

申请日：2020-10-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu Song ,  Kyooho Jung ,  Yongsung Kim ,  Jeongil Bang ,  Jooho Lee ,  Junghwa Kim ,  Haeryong Kim ,  Myoungho Jeong

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L21/768

CPC classification number: H01L21/02181 ,  H01L21/0245 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02403 ,  H01L21/02472 ,  H01L21/02667 ,  H01L21/76871 ,  H01L29/66969 ,  H01L29/7869

Abstract: A semiconductor device and a method of manufacturing the semiconductor device are included. The method of manufacturing the semiconductor device includes forming a hafnium oxide layer on a substrate and crystallizing the hafnium oxide layer by using a hafnium cobalt oxide layer as a seed layer. According to the method of manufacturing the semiconductor device, a thin-film hafnium oxide layer may be easily crystallized.

公开(公告)号：US11424317B2

公开(公告)日：2022-08-23

申请号：US16839641

申请日：2020-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu Song ,  Kyooho Jung ,  Younsoo Kim ,  Haeryong Kim ,  Jooho Lee

IPC: H01L27/108 ,  H01L49/02 ,  H01L21/285

Abstract: A capacitor includes: a lower electrode including a metal nitride represented by MM′N, wherein M is a metal element, M′ is an element different from M, and N is nitrogen; a dielectric layer on the lower electrode; an interfacial layer between the lower electrode and the dielectric layer and including a metal nitrate represented by MM′ON, wherein M is a metal element, M′ is an element different from M, N is nitrogen, and O is oxygen; and an upper electrode on the dielectric layer.

公开(公告)号：US11342414B2

公开(公告)日：2022-05-24

申请号：US17001925

申请日：2020-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun Lee ,  Haeryong Kim ,  Hyeonjin Shin ,  Seunggeol Nam ,  Seongjun Park

IPC: H01L29/08 ,  H01L29/417 ,  H01L29/04 ,  H01L29/06 ,  H01L29/267 ,  H01L29/78 ,  H01L21/285 ,  H01L29/45 ,  H01L29/16 ,  H01L29/165

Abstract: A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.

公开(公告)号：US11257899B2

公开(公告)日：2022-02-22

申请号：US16895362

申请日：2020-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haeryong Kim ,  Jungmin Park ,  Yongsung Kim ,  Jooho Lee

IPC: H01L49/02 ,  H01L29/78 ,  H01L21/02 ,  H01L27/108 ,  H01L29/51

Abstract: Provided are a film structure including hafnium oxide, an electronic device including the same, and a method of manufacturing the same. The film structure including hafnium oxide includes a hafnium oxide layer including hafnium oxide crystallized in a tetragonal phase, and first and second stressor layers apart from each other with the hafnium oxide layer therebetween and applying compressive stress to the hafnium oxide layer.

公开(公告)号：US11018001B2

公开(公告)日：2021-05-25

申请号：US16922330

申请日：2020-07-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haeryong Kim ,  Hyeonjin Shin ,  Jaeho Lee ,  Sanghyun Jo

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  H01L29/778 ,  H01L29/24

Abstract: A method of growing a two-dimensional transition metal dichalcogenide (TMD) thin film and a method of manufacturing a device including the two-dimensional TMD thin film are provided. The method of growing the two-dimensional TMD thin film may include a precursor supply operation and an evacuation operation, which are periodically and repeatedly performed in a reaction chamber provided with a substrate for thin film growth. The precursor supply operation may include supplying two or more kinds of precursors of a TMD material to the reaction chamber. The evacuation operation may include evacuating the two or more kinds of precursors and by-products generated therefrom from the reaction chamber.

公开(公告)号：US09922825B2

公开(公告)日：2018-03-20

申请号：US14728583

申请日：2015-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun Lee ,  Hyeonjin Shin ,  Jaeho Lee ,  Haeryong Kim

IPC: H01L29/06 ,  H01L21/02 ,  H01L29/78 ,  H01L29/786 ,  H01L29/66 ,  H01L29/778 ,  H01L29/24 ,  H01L29/41 ,  H01L29/16

CPC classification number: H01L21/02568 ,  H01L21/0259 ,  H01L21/02628 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/413 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/7839 ,  H01L29/786 ,  H01L29/78654 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78696

Abstract: An electronic device includes first and second electrodes that are spaced apart from each other and a 2D material layer. The 2D material layer connects the first and second electrodes. The 2D material layer includes a plurality of 2D nanomaterials. At least some of the 2D nanomaterials overlap one another.

公开(公告)号：US12132133B2

公开(公告)日：2024-10-29

申请号：US18338631

申请日：2023-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun Jo ,  Jaeho Lee ,  Haeryong Kim ,  Hyeonjin Shin

IPC: H01L29/66 ,  G01S7/481 ,  G01S17/931 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/101 ,  H01L31/107 ,  H01S5/0687 ,  H10K39/32 ,  G05D1/00 ,  H01L31/0256 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0312

CPC classification number: H01L31/1075 ,  G01S7/4816 ,  G01S7/4817 ,  G01S17/931 ,  H01L27/14643 ,  H01L27/14647 ,  H01L31/02027 ,  H01L31/022466 ,  H01L31/028 ,  H01L31/032 ,  H01L31/035209 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/1013 ,  H01S5/0687 ,  H10K39/32 ,  G05D1/024 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0312 ,  H01L31/0324 ,  H01L2031/0344 ,  H01L31/035218

Abstract: A photodetector having a small form factor and having high detection efficiency with respect to both visible light and infrared rays may include a first electrode, a collector layer on the first electrode, a tunnel barrier layer on the collector layer, a graphene layer on the tunnel barrier layer, an emitter layer on the graphene layer, and a second electrode on the emitter layer. The photodetector may be included in an image sensor. An image sensor may include a substrate, an insulating layer on the substrate, and a plurality of photodetectors on the insulating layer. The photodetectors may be aligned with each other in a direction extending parallel or perpendicular to a top surface of the insulating layer. The photodetector may be included in a LiDAR system.

公开(公告)号：US12040360B2

公开(公告)日：2024-07-16

申请号：US17735475

申请日：2022-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun Lee ,  Haeryong Kim ,  Hyeonjin Shin ,  Seunggeol Nam ,  Seongjun Park

IPC: H01L29/08 ,  H01L21/285 ,  H01L29/04 ,  H01L29/06 ,  H01L29/267 ,  H01L29/417 ,  H01L29/45 ,  H01L29/78 ,  H01L29/16 ,  H01L29/165

CPC classification number: H01L29/0847 ,  H01L21/28512 ,  H01L29/04 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/267 ,  H01L29/41725 ,  H01L29/45 ,  H01L29/78 ,  H01L29/1606 ,  H01L29/165

Abstract: A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.

公开(公告)号：US11784213B2

公开(公告)日：2023-10-10

申请号：US17315947

申请日：2021-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungmin Park ,  Hanjin Lim ,  Haeryong Kim ,  Younglim Park ,  Cheoljin Cho

IPC: H01L49/02

CPC classification number: H01L28/60

Abstract: An integrated circuit device including a first electrode layer including a first metal and having a first thermal expansion coefficient; a dielectric layer on the first electrode layer, the dielectric layer including a second metal oxide including a second metal that is different from the first metal, and having a second thermal expansion coefficient that is less than the first thermal expansion coefficient; and a first stress buffer layer between the first electrode layer and the dielectric layer, the first stress buffer layer including a first metal oxide including the first metal, and being formed due to thermal stress of the first electrode layer and thermal stress of the dielectric layer.

公开(公告)号：US11721781B2

公开(公告)日：2023-08-08

申请号：US17857466

申请日：2022-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun Jo ,  Jaeho Lee ,  Haeryong Kim ,  Hyeonjin Shin

IPC: H01L21/76 ,  H01L23/48 ,  H01L31/107 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0352 ,  H01S5/0687 ,  G01S7/481 ,  H01L31/028 ,  H01L31/032 ,  H01L27/146 ,  H01L31/101 ,  G01S17/931 ,  H10K39/32 ,  H01L31/0304 ,  H01L31/0296 ,  H01L31/0312 ,  H01L31/0256 ,  G05D1/02

CPC classification number: H01L31/1075 ,  G01S7/4816 ,  G01S7/4817 ,  G01S17/931 ,  H01L27/14643 ,  H01L27/14647 ,  H01L31/028 ,  H01L31/02027 ,  H01L31/022466 ,  H01L31/032 ,  H01L31/03529 ,  H01L31/035209 ,  H01L31/035281 ,  H01L31/1013 ,  H01S5/0687 ,  H10K39/32 ,  G05D1/024 ,  G05D2201/0213 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0312 ,  H01L31/0324 ,  H01L31/035218 ,  H01L2031/0344

Abstract: A photodetector having a small form factor and having high detection efficiency with respect to both visible light and infrared rays may include a first electrode, a collector layer on the first electrode, a tunnel barrier layer on the collector layer, a graphene layer on the tunnel barrier layer, an emitter layer on the graphene layer, and a second electrode on the emitter layer. The photodetector may be included in an image sensor. An image sensor may include a substrate, an insulating layer on the substrate, and a plurality of photodetectors on the insulating layer. The photodetectors may be aligned with each other in a direction extending parallel or perpendicular to a top surface of the insulating layer. The photodetector may be included in a LiDAR system.