公开(公告)号：US09728463B2

公开(公告)日：2017-08-08

申请号：US15209093

申请日：2016-07-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ha-jin Lim ,  Gi-gwan Park ,  Sang-yub Ie ,  Jong-han Lee ,  Jeong-hyuk Yim ,  Hye-ri Hong

IPC: H01L21/8234 ,  H01L29/66 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/823462 ,  H01L21/02123 ,  H01L21/02271 ,  H01L21/02318 ,  H01L21/02348 ,  H01L21/02356 ,  H01L21/02362 ,  H01L21/28185 ,  H01L21/3003 ,  H01L21/67207 ,  H01L29/66795

Abstract: Methods of manufacturing a semiconductor device are provided. The methods may include forming a fin-type active region protruding from a substrate and forming a gate insulating film covering a top surface and both sidewalls of the fin-type active region. The gate insulating film may include a high-k dielectric film. The methods may also include forming a metal-containing layer on the gate insulating film, forming a silicon capping layer containing hydrogen atoms on the metal-containing layer, removing a portion of the hydrogen atoms contained in the silicon capping layer, removing the silicon capping layer and at least a portion of the metal-containing layer, and forming a gate electrode on the gate insulating film. The gate electrode may cover the top surface and the both sidewalls of the fin-type active region.

公开(公告)号：US10734280B2

公开(公告)日：2020-08-04

申请号：US16154896

申请日：2018-10-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong-hyuk Yim ,  Kuo Tai Huang ,  Wan-don Kim ,  Sang-jin Hyun

IPC: H01L21/768 ,  H01L23/522 ,  H01L29/66 ,  H01L29/417 ,  H01L23/532 ,  H01L29/78

Abstract: An integrated circuit (IC) device includes a substrate having a fin-type active region extending in a first direction, a gate structure intersecting the fin-type active region on the substrate, the gate structure extending in a second direction perpendicular to the first direction and parallel to a top surface of the substrate, source and drain regions on both sides of the gate structure, and a first contact structure electrically connected to one of the source and drain regions, the first contact structure including a first contact plug including a first material and a first wetting layer surrounding the first contact plug, the first wetting layer including a second material having a lattice constant that differs from a lattice constant of the first material by about 10% or less.