公开(公告)号：US09728666B2

公开(公告)日：2017-08-08

申请号：US14141547

申请日：2013-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bongjin Kuh ,  Kichul Kim ,  JeongMeung Kim ,  Joonghan Shin ,  Jongsung Lim ,  Hanmei Choi

IPC: H01L31/0248 ,  H01L31/105 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/105 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/03529 ,  H01L31/1808 ,  H01L31/1872 ,  Y02E10/50 ,  Y02P70/521

Abstract: A semiconductor device includes a substrate, a first insulation layer formed on the substrate in a first region, a photon absorption seed layer formed on the first insulation layer in the first region and on the substrate in a second region separate from the first region, and a photon absorption layer formed on the photon absorption seed layer in the first region. The photon absorption seed layer has a particular structure that may assist in reducing dislocation density in a region that includes a photon absorption layer.