公开(公告)号：US20180166447A1

公开(公告)日：2018-06-14

申请号：US15677726

申请日：2017-08-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Ung Pak ,  Won Chul Lee ,  Je Min Park

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10808 ,  H01L27/10852 ,  H01L27/10855 ,  H01L28/87 ,  H01L28/91

Abstract: A semiconductor device includes a substrate, first, second and third structures disposed on the substrate and spaced apart from one another in a first direction, wherein each of the first, second and third structures includes lower electrodes, and a supporter pattern supporting the first, second and third structures and including a first region and a second region, wherein the first region exposes first parts of sidewalls of the first, second and third structures, and the second region surrounds second parts of the sidewalls of the first, second and third structures. A first length of a sidewall of the supporter pattern between the first and second structures is greater than a first distance between the first and second structures. A second length of a sidewall of the supporter pattern between the second and third structures is greater than a second distance between the second and third structures.

公开(公告)号：US10756091B2

公开(公告)日：2020-08-25

申请号：US16279360

申请日：2019-02-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Ung Pak ,  Won Chul Lee

IPC: H01L27/108 ,  H01L27/11 ,  G11C11/416 ,  H01L21/285 ,  G11C7/12 ,  G11C11/56 ,  H01L49/02 ,  H01L27/112 ,  G11C5/02 ,  G11C11/403 ,  G11C11/412

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate which includes a cell region including first and second regions, and a peri region more adjacent to the second region than adjacent to the first region, first and second lower electrodes disposed in the first and second regions, respectively, first and second lower support patterns disposed on outer walls of the first and second lower electrodes, respectively, an upper support pattern disposed on outer walls of the first and second lower electrodes, and being on and spaced apart from the first and second lower support patterns, a dielectric layer disposed on surfaces of the first and second lower electrodes, the first and second lower support patterns, and the upper support pattern, and an upper electrode disposed on a surface of the dielectric layer, wherein thickness of the first lower support pattern is smaller than thickness of the second lower support pattern.

公开(公告)号：US10283509B2

公开(公告)日：2019-05-07

申请号：US15725517

申请日：2017-10-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Ung Pak ,  Won Chul Lee

IPC: G11C5/02 ,  G11C7/12 ,  H01L27/108 ,  H01L27/11 ,  G11C11/416 ,  H01L21/285 ,  G11C11/56 ,  H01L49/02 ,  H01L27/112 ,  G11C11/403 ,  G11C11/412

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate which includes a cell region including first and second regions, and a peri region more adjacent to the second region than adjacent to the first region, first and second lower electrodes disposed in the first and second regions, respectively, first and second lower support patterns disposed on outer walls of the first and second lower electrodes, respectively, an upper support pattern disposed on outer walls of the first and second lower electrodes, and being on and spaced apart from the first and second lower support patterns, a dielectric layer disposed on surfaces of the first and second lower electrodes, the first and second lower support patterns, and the upper support pattern, and an upper electrode disposed on a surface of the dielectric layer, wherein thickness of the first lower support pattern is smaller than thickness of the second lower support pattern.