公开(公告)号：US11735396B2

公开(公告)日：2023-08-22

申请号：US17148037

申请日：2021-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Bo Shim ,  Doug Yong Sung ,  Ho-Jun Lee ,  Jee Hun Jeong ,  Sung Hwan Cho ,  Ju-Hong Cha

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/3244 ,  H01J37/32119

Abstract: An inductively coupled plasma processing apparatus includes a lower chamber providing a space for a substrate, a high-frequency antenna that generates inductively coupled plasma in the lower chamber, dielectric windows disposed between the lower chamber and the high-frequency antenna, metal windows alternatingly disposed between the dielectric windows, and gas inlet pipes disposed in each of the metal windows, wherein each of the gas inlet pipes includes nozzles that introduce gases to the lower chamberamber.