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公开(公告)号：US11581344B2
公开(公告)日：2023-02-14
申请号：US17399282
申请日：2021-08-11
发明人： Jung Bin Yun , Eun Sub Shim , Kyung Ho Lee , Sung Ho Choi , Jung Hoon Park , Jung Wook Lim , Min Ji Jung
IPC分类号： H01L27/146 , H04N5/369 , H04N5/3745 , H04N5/374
摘要： Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.
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公开(公告)号：US10785432B2
公开(公告)日：2020-09-22
申请号：US16122215
申请日：2018-09-05
发明人： Jung wook Lim , Sung Soo Choi , Eun Sub Shim , Jung Bin Yun , Sung-Ho Choi
摘要： An image sensor includes a photoelectric converter to generate charges in response to incident light and to provide the generated charges to a first node, a transfer transistor to provide a voltage of the first node to a floating diffusion node based on a first control signal, a source follower transistor to provide a voltage of the floating diffusion node as a unit pixel output, a correlated double sampler (CDS) to receive the unit pixel output and to convert the unit pixel output into a digital code. The first control signal having first, second, and third voltages is maintained at the second voltage in a period between when the voltage of the first node is provided to the floating diffusion node and when the CDS is provided with the voltage of the first node as the unit pixel output.
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公开(公告)号：US12094906B2
公开(公告)日：2024-09-17
申请号：US17826708
申请日：2022-05-27
发明人： Jung Bin Yun , Kyungho Lee , Sung-Ho Choi
IPC分类号： H01L27/14 , H01L27/146
CPC分类号： H01L27/1463 , H01L27/1461 , H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/14645
摘要： Disclosed is a complementary metal oxide semiconductor (CMOS) image sensor. The image sensor comprises a first separation zone in a substrate, the first separation zone defining first and second pixel regions arranged in a first direction, the first separation zone including first parts substantially parallel extending in the first direction, and the substrate including a first active region vertically overlapping one of the first parts and a second active region vertically overlapping another of the first parts. The image sensor further comprises first and second photoelectric conversion devices arranged in the first direction on at least one of the first and second pixel regions in the substrate, and a source follower gate on the first active region of the substrate.
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公开(公告)号：US20230154946A1
公开(公告)日：2023-05-18
申请号：US18155785
申请日：2023-01-18
发明人： Jung Bin Yun , Eun Sub SHIM , Kyung Ho LEE , Sung Ho CHOI , Jung Hoon PARK , Jung Wook LIM , Min Ji JUNG
IPC分类号： H01L27/146 , H04N25/70 , H04N25/778
CPC分类号： H01L27/14605 , H01L27/14627 , H01L27/14641 , H04N25/70 , H04N25/778
摘要： Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.
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公开(公告)号：US20180294297A1
公开(公告)日：2018-10-11
申请号：US15862013
申请日：2018-01-04
发明人： Jung Bin Yun , Eun Sub Shim , Kyung Ho Lee , Sung Ho Choi , Jung Hoon Park , Jung Wook Lim , Min Ji Jung
IPC分类号： H01L27/146 , H04N5/369
CPC分类号： H01L27/14605 , H01L27/14627 , H01L27/14641 , H04N5/369 , H04N5/37457
摘要： Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.
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公开(公告)号：US12069390B2
公开(公告)日：2024-08-20
申请号：US17984086
申请日：2022-11-09
发明人： Hwanwoong Kim , Jihun Kim , Jung Bin Yun , Seungjoon Lee , Hongsuk Lee
IPC分类号： H04N25/75 , H01L27/146 , H04N25/77
CPC分类号： H04N25/77 , H01L27/1463 , H04N25/75
摘要： A pixel array including pixels arranged in a matrix shape is provided. The pixels have a same structure and are separated from each other by front deep trench isolation (FDTI). A first pixel among the pixels includes a first floating diffusion region, a first group of photoelectric conversion elements, a first group of charge transfer transistors, a first source follower transistor, and a first transistor, a second transistor, and a first reset transistor connected in series between the first floating diffusion region and a voltage supply line. One of the first transistor, the second transistor, and the first reset transistor is formed in a first sub-pixel region. At least another one of the first transistor, the second transistor, and the first reset transistor is formed in a second sub-pixel region. The first sub-pixel region and the second sub-pixel region are separated from each other by the FDTI.
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公开(公告)号：US11121157B2
公开(公告)日：2021-09-14
申请号：US16711987
申请日：2019-12-12
发明人： Jung Bin Yun , Eun Sub Shim , Kyung Ho Lee , Sung Ho Choi , Jung Hoon Park , Jung Wook Lim , Min Ji Jung
IPC分类号： H01L27/146 , H04N5/378 , H04N5/374 , H04N5/357 , H04N5/3745 , H04N5/369
摘要： Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.
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公开(公告)号：US10608032B2
公开(公告)日：2020-03-31
申请号：US15405451
申请日：2017-01-13
发明人： Jung Bin Yun , Kyungho Lee , Sung-Ho Choi
IPC分类号： H01L27/146
摘要： Disclosed is a complementary metal oxide semiconductor (CMOS) image sensor. The image sensor comprises a first separation zone in a substrate, the first separation zone defining first and second pixel regions arranged in a first direction, the first separation zone including first parts substantially parallel extending in the first direction, and the substrate including a first active region vertically overlapping one of the first parts and a second active region vertically overlapping another of the first parts. The image sensor further comprises first and second photoelectric conversion devices arranged in the first direction on at least one of the first and second pixel regions in the substrate, and a source follower gate on the first active region of the substrate.
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公开(公告)号：US10199421B2
公开(公告)日：2019-02-05
申请号：US14959642
申请日：2015-12-04
发明人： Hyuk Soon Choi , Jung Bin Yun , Jungchak Ahn
IPC分类号： H01L27/146
摘要： An image sensor includes a substrate including unit pixels. Each of the unit pixels includes photoelectric conversion elements and storage diodes.
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公开(公告)号：US20230369357A1
公开(公告)日：2023-11-16
申请号：US18355427
申请日：2023-07-20
发明人： Jung Bin Yun , Eun Sub SHIM , Kyung Ho LEE , Sung Ho CHOI , Jung Hoon PARK , Jung Wook LIM , Min Ji JUNG
IPC分类号： H01L27/146 , H04N25/70 , H04N25/778
CPC分类号： H01L27/14605 , H01L27/14627 , H01L27/14641 , H04N25/70 , H04N25/778
摘要： Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.
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