公开(公告)号：US20170062190A1

公开(公告)日：2017-03-02

申请号：US15132506

申请日：2016-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-hyun LEE ,  Jun-ho YOON ,  Jung-hyun CHO ,  Bok-yeon WON ,  Tae-hwa KIM

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32532 ,  H01J37/32027 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32146

Abstract: A plasma generation apparatus is provided. The plasma generation apparatus includes a chamber defining a reaction space that can be isolated from an external environment, an upper electrode provided in an upper portion of the chamber, a lower electrode provided in a lower portion of the chamber, a sidewall electrode provided at a sidewall of the chamber, a radio frequency (RF) pulse power supplier configured to supply RF pulse power to at least one selected from the upper electrode and the lower electrode, and a direct current (DC) pulse power supplier configured to supply DC pulse power to the sidewall electrode.

Abstract translation: 提供了一种等离子体产生装置。 等离子体产生装置包括限定可与外部环境隔离的反应空间的室，设置在室的上部的上电极，设置在室的下部的下电极，设置在室 腔室的侧壁，被配置为向从上部电极和下部电极中选择的至少一个提供RF脉冲功率的射频（RF）脉冲电力供给器，以及被配置为提供直流脉冲功率的直流（DC）脉冲电源 到侧壁电极。

公开(公告)号：US20160307739A1

公开(公告)日：2016-10-20

申请号：US15010151

申请日：2016-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ja-woo LEE ,  Chung-huan JEON ,  Heok-jae LEE ,  Jang-hyoun YOUM ,  Sang-jean JEON ,  Kwang-young JUNG ,  Sun-uk KIM ,  Kang-ho LEE ,  Jung-hyun CHO ,  Soon-im WI ,  Yun-sik YANG ,  Moo-jin KIM ,  Jang-kyu CHOI

IPC: H01J37/32 ,  H05H1/46

CPC classification number: H01J37/32467 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/3266 ,  H05H1/2406 ,  H05H1/46 ,  H05H2001/2462 ,  H05H2001/4667 ,  H05H2001/4682

Abstract: A remote plasma generator includes a body, a driver, and a protection tube. The body includes a gas injection port, a plasma exhaust port, and a plasma generation pipe through which discharge gas or plasma flow. The driver is coupled to the body and generates a magnetic field and plasma in the body. The protection tube is at an inner side of the plasma generation pipe to protect the plasma generation pipe from plasma.

Abstract translation: 远程等离子体发生器包括主体，驱动器和保护管。 主体包括气体注入口，等离子体排气口和等离子体产生管，通过该等离子体产生管，放电气体或等离子体流过。 驱动器耦合到身体并在身体中产生磁场和等离子体。 保护管位于等离子体发生管的内侧，以保护等离子体发生管免受等离子体的影响。

公开(公告)号：US20160126069A1

公开(公告)日：2016-05-05

申请号：US14796188

申请日：2015-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ohyung KWON ,  Namjun KANG ,  Doug-Yong SUNG ,  Jung-hyun CHO

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J7/24 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32926 ,  H01J2237/327 ,  H01J2237/334 ,  H05B31/26

Abstract: A pulse plasma apparatus includes a process chamber, source RF generator configured to supply first and second level RF pulse power having first and second duty cycles to an upper electrode of the process chamber, a reflected power indicator configured to indicate reflection RF power, a first matching network, and a controller. The first matching network is configured to match an impedance of the process chamber with an impedance of the source RF generator as a first or second matching capacitance value, respectively when the first level RF pulse power or second level RF pulse power is supplied, respectively. The controller is configured to calculate a third matching capacitance value based on the first and second matching capacitance values and a ratio of the first and second duty cycles, provide the third matching capacitance values to the first matching network, and control the source RF generator and first matching network.

Abstract translation: 脉冲等离子体装置包括处理室，源RF发生器，被配置为向处理室的上电极提供具有第一和第二占空比的第一和第二电平的RF脉冲功率，被配置为指示反射RF功率的反射功率指示器，第一 匹配网络和控制器。 当分别提供第一级RF脉冲功率或第二级RF脉冲功率时，第一匹配网络被配置为将处理室的阻抗与源RF发生器的阻抗分别匹配为第一或第二匹配电容值。 控制器被配置为基于第一和第二匹配电容值和第一和第二占空比的比率来计算第三匹配电容值，向第一匹配网络提供第三匹配电容值，并且控制源RF发生器和 第一匹配网络。