公开(公告)号：US09703189B2

公开(公告)日：2017-07-11

申请号：US14685620

申请日：2015-04-14

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Ki-Ho Yang ,  Sibo Cai ,  Seung-Hune Yang

IPC分类号： G06F17/50 ,  G03F1/72 ,  G03F1/84

CPC分类号： G03F1/72 ,  G03F1/84

摘要： In a method of calculating a shift value of a cell contact, a reference region and a correction region may be set on an image of an actual cell block. The cell block may include a plurality of actual cell contacts formed using a mask. Each of preliminary shift values of the actual cell contacts with respect to target cell contacts in a target cell block to be formed using the mask may be measured based on the image. The preliminary shift values of the actual cell contacts in the reference region may be minimized. Actual shift values of the actual cell contacts in the correction region with respect to the minimized preliminary shift values may be calculated. Thus, the mask may be corrected using the accurately measured shift values so that the cell contacts may have designed positions.

公开(公告)号：US10126646B2

公开(公告)日：2018-11-13

申请号：US15615851

申请日：2017-06-07

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Ki-Ho Yang ,  Sibo Cai ,  Seung-Hune Yang

IPC分类号： G03F1/72 ,  G03F1/84

摘要： In a method of calculating a shift value of a cell contact, a reference region and a correction region may be set on an image of an actual cell block. The cell block may include a plurality of actual cell contacts formed using a mask. Each of preliminary shift values of the actual cell contacts with respect to target cell contacts in a target cell block to be formed using the mask may be measured based on the image. The preliminary shift values of the actual cell contacts in the reference region may be minimized. Actual shift values of the actual cell contacts in the correction region with respect to the minimized preliminary shift values may be calculated. Thus, the mask may be corrected using the accurately measured shift values so that the cell contacts may have designed positions.

公开(公告)号：US11068635B2

公开(公告)日：2021-07-20

申请号：US16117086

申请日：2018-08-30

申请人： Samsung Electronics Co., Ltd.

发明人： Ki-Ho Yang ,  Jun-Young Jang ,  Chang-Hwan Kim ,  Sung-Soo Suh

IPC分类号： G06F30/392 ,  G03F1/36 ,  H01L21/8234 ,  H01L27/02

摘要： In a method of designing a mask, a first mask including an active region, a gate structure, and a gate tap partially overlapping the active region and the gate structure is designed. The first mask is changed so that a portion of the gate tap is extended. An OPC is performed on the changed first mask to design a second mask.