公开(公告)号：US11581344B2

公开(公告)日：2023-02-14

申请号：US17399282

申请日：2021-08-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

IPC: H01L27/146 ,  H04N5/369 ,  H04N5/3745 ,  H04N5/374

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

公开(公告)号：US10270996B2

公开(公告)日：2019-04-23

申请号：US15461929

申请日：2017-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Ho Lee

IPC: H04N5/04 ,  H04N9/04 ,  H04N5/232 ,  H04N5/369 ,  H04N5/374 ,  H04N9/077 ,  H01L27/146

Abstract: An image sensor according to some example embodiments includes a pixel array unit including a plurality of transmission signal lines and a plurality of output signal lines, and a plurality of pixels connected to the plurality of transmission signal lines and the plurality of output signal lines. Each of the plurality of pixels includes a plurality of photoelectric conversion elements, which are configured to detect and photoelectrically convert incident light. The plurality of pixels include at least one autofocusing pixel and at least one normal pixel.

公开(公告)号：US11742308B2

公开(公告)日：2023-08-29

申请号：US16932185

申请日：2020-07-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seok Hwan Kim ,  Han Kim ,  Kyung Ho Lee ,  Kyung Moon Jung

IPC: H01L23/00 ,  H01L23/28 ,  H01L23/498 ,  H01L23/538 ,  H01L23/16 ,  H01L23/31

CPC classification number: H01L24/14 ,  H01L23/16 ,  H01L23/28 ,  H01L23/49816 ,  H01L23/5384 ,  H01L23/562 ,  H01L23/3128 ,  H01L2224/16225 ,  H01L2224/18 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/1431 ,  H01L2924/1433 ,  H01L2924/1436 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/73204 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2924/00 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/1431 ,  H01L2924/00012 ,  H01L2924/1436 ,  H01L2924/00012 ,  H01L2924/1433 ,  H01L2924/00012

Abstract: A semiconductor package includes: a connection member having a first surface and a second surface opposing each other in a stacking direction of the semiconductor package and including an insulating member and a redistribution layer formed on the insulating member and having a redistribution via; a semiconductor chip disposed on the first surface of the connection member and having connection pads connected to the redistribution layer; an encapsulant disposed on the first surface of the connection member and encapsulating the semiconductor chip; a passivation layer disposed on the second surface of the connection member; UBM pads disposed on the passivation layer and overlapping the redistribution vias in the stacking direction; and UBM vias connecting the UBM pads to the redistribution layer through the passivation layer, not overlapping the redistribution vias with respect to the stacking direction, and having a non-circular cross section.

公开(公告)号：US11375148B2

公开(公告)日：2022-06-28

申请号：US16730420

申请日：2019-12-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Sub Shim ,  Kyung Ho Lee

IPC: H04N5/378 ,  H01L27/146

Abstract: An image sensor is provided. The image sensor includes: a pixel array including a plurality of pixels arranged along rows and columns; and a row driver which drives the plurality of pixels for each of the rows, wherein each of the plurality of pixels includes a plurality of sub-pixels, each of the plurality of sub-pixels includes a plurality of photoelectric conversion elements sharing a floating diffusion area with each other, and a micro lens disposed to overlap the plurality of photoelectric conversion elements, a readout area is defined on the pixel array in accordance with a preset readout mode, and the row driver generates a drive signal for reading out signals provided from a photoelectric conversion element included in the readout area from among the plurality of photoelectric conversion elements, and provides the drive signal to the pixel array.

公开(公告)号：US11223788B2

公开(公告)日：2022-01-11

申请号：US16844334

申请日：2020-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Ho Lee

IPC: H04N5/369 ,  H04N5/232 ,  H04N9/04 ,  H01L27/146 ,  H04N5/04 ,  H04N5/374 ,  H04N9/077

Abstract: An image sensor according to some example embodiments includes a pixel array unit including a plurality of transmission signal lines and a plurality of output signal lines, and a plurality of pixels connected to the plurality of transmission signal lines and the plurality of output signal lines. Each of the plurality of pixels includes a plurality of photoelectric conversion elements, which are configured to detect and photoelectrically convert incident light. The plurality of pixels include at least one autofocusing pixel and at least one normal pixel.

公开(公告)号：US11121157B2

公开(公告)日：2021-09-14

申请号：US16711987

申请日：2019-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/374 ,  H04N5/357 ,  H04N5/3745 ,  H04N5/369

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

公开(公告)号：US12154926B2

公开(公告)日：2024-11-26

申请号：US17360447

申请日：2021-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Duck Lee ,  Doo Sik Seol ,  Kyung Ho Lee ,  Tae Sub Jung ,  Masato Fujita

IPC: H01L27/146 ,  H01L23/60

Abstract: An image sensor includes a substrate including a first side on which light is incident, and a second side opposite to the first side, a pixel isolation pattern formed inside the substrate which defines a plurality of unit pixels, a first photoelectric conversion region and a second photoelectric conversion region arranged along a first direction, inside each of the unit pixels, and a region isolation pattern which protrudes from the pixel isolation pattern in a second direction intersecting the first direction, and defines an isolation region between the first photoelectric conversion region and the second photoelectric conversion region. A first width of the isolation region in the second direction on the first side is more than about 1.1 times a second width of the isolation region in the second direction on the second side.

公开(公告)号：US12046616B2

公开(公告)日：2024-07-23

申请号：US17318231

申请日：2021-05-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Ki Baek ,  Kyung Ho Lee ,  Tae Sub Jung ,  Doo Sik Seol ,  Seung Ki Jung

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14614 ,  H01L27/14627 ,  H01L27/14636

Abstract: An image sensor includes a substrate, a first isolation region defining a unit pixel, a first photoelectric conversion region in the unit pixel, a second photoelectric conversion region in the unit pixel, the second photoelectric conversion region spaced apart from the first photoelectric conversion region, a floating diffusion region, the floating diffusion region adjacent to the first surface of the substrate, a first transfer gate on the first surface of the substrate, the first transfer gate between the first photoelectric conversion region and the floating diffusion region, and a second transfer gate on the first surface of the substrate, the second transfer gate between the second photoelectric conversion region and the floating diffusion region. At least a part of the first transfer gate is buried in the substrate, and a bottom surface of the first transfer gate is different in height from a bottom surface of the second transfer gate.

公开(公告)号：US11979677B2

公开(公告)日：2024-05-07

申请号：US18180904

申请日：2023-03-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Sub Shim ,  Kyung Ho Lee

IPC: H04N25/75 ,  H01L27/146

CPC classification number: H04N25/75 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14627

Abstract: An image sensor is provided. The image sensor includes: a pixel array including a plurality of pixels arranged along rows and columns; and a row driver which drives the plurality of pixels for each of the rows, wherein each of the plurality of pixels includes a plurality of sub-pixels, each of the plurality of sub-pixels includes a plurality of photoelectric conversion elements sharing a floating diffusion area with each other, and a micro lens disposed to overlap the plurality of photoelectric conversion elements, a readout area is defined on the pixel array in accordance with a preset readout mode, and the row driver generates a drive signal for reading out signals provided from a photoelectric conversion element included in the readout area from among the plurality of photoelectric conversion elements, and provides the drive signal to the pixel array.

公开(公告)号：US11011559B2

公开(公告)日：2021-05-18

申请号：US16712020

申请日：2019-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/378 ,  H04N5/369 ,  H04N5/3745 ,  H04N5/357

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.