公开(公告)号：US09087971B2

公开(公告)日：2015-07-21

申请号：US14473709

申请日：2014-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Hoon Lee ,  Geon-Wook Yoo ,  Nam-Goo Cha ,  Kyung-Wook Hwang

IPC: H01L33/00 ,  H01L33/60 ,  H01L27/15 ,  H01L33/14 ,  H01L33/24 ,  H01L33/46 ,  B82Y20/00 ,  H01L33/08

CPC classification number: H01L33/60 ,  B82Y20/00 ,  H01L27/15 ,  H01L33/08 ,  H01L33/14 ,  H01L33/24 ,  H01L33/46 ,  Y10S977/762 ,  Y10S977/949 ,  Y10S977/95

Abstract: A light-emitting device includes a first conductive semiconductor layer formed on a substrate, a mask layer formed on the first conductive semiconductor layer and having a plurality of holes, a plurality of vertical light-emitting structures vertically grown on the first conductive semiconductor layer through the plurality of holes, a current diffusion layer surrounding the plurality of vertical light-emitting structures on the first conductive semiconductor layer, and a dielectric reflector filling a space between the plurality of vertical light-emitting structures on the current diffusion layer.

Abstract translation: 发光装置包括形成在基板上的第一导电半导体层，形成在第一导电半导体层上并具有多个孔的掩模层，在第一导电半导体层上垂直生长的多个垂直发光结构，通过 所述多个孔，围绕所述第一导电半导体层上的所述多个垂直发光结构的电流扩散层，以及填充所述电流扩散层上的所述多个垂直发光结构之间的空间的电介质反射器。

公开(公告)号：US08853671B2

公开(公告)日：2014-10-07

申请号：US13657357

申请日：2012-10-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam-Goo Cha ,  Geon-Wook Yoo ,  Han-Kyu Seong ,  Sam-Mook Kang ,  Hun-Jae Chung

IPC: H01L29/06 ,  H01L33/00 ,  H01L33/38 ,  H01L33/18 ,  H01L33/08 ,  H01L33/24 ,  H01L33/44

CPC classification number: H01L33/18 ,  H01L33/007 ,  H01L33/08 ,  H01L33/24 ,  H01L33/385 ,  H01L33/44

Abstract: A nanorod light emitting device and a method of manufacturing the same. The nanorod light emitting device may include at least one nitride semiconductor layer, light emitting nanorods formed on the nitride semiconductor layer and spaced apart from each other, and a first filling layer, a conductive layer, and a second filling layer formed in spaces between the light emitting nanorods.

Abstract translation: 纳米棒发光器件及其制造方法。 纳米棒发光器件可以包括至少一个氮化物半导体层，形成在氮化物半导体层上并彼此间隔开的发光纳米棒，以及第一填充层，导电层和形成在第二填充层之间的第二填充层 发光纳米棒。

公开(公告)号：US09853185B2

公开(公告)日：2017-12-26

申请号：US15297647

申请日：2016-10-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam-Goo Cha ,  Dong-Ho Kim ,  Geon-Wook Yoo

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/36 ,  H01L33/44 ,  H01L33/40 ,  H01L33/38

CPC classification number: H01L33/06 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/36 ,  H01L33/382 ,  H01L33/387 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: There is provided a method for manufacturing a nanostructure semiconductor light emitting device, including: forming a mask having a plurality of openings on a base layer; growing a first conductivity-type semiconductor layer on exposed regions of the base layer such that the plurality of openings are filled, to form a plurality of nanocores; partially removing the mask such that side surfaces of the plurality of nanocores are exposed; heat-treating the plurality of nanocores after partially removing the mask; sequentially growing an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores to form a plurality of light emitting nanostructures, after the heat treatment; and planarizing upper parts of the plurality of light emitting nanostructures such that upper surfaces of the nanocores are exposed.

公开(公告)号：US09842966B2

公开(公告)日：2017-12-12

申请号：US14764513

申请日：2014-01-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam-Goo Cha ,  Bong-Jin Kuh ,  Han-Mei Choi

IPC: H01L33/24 ,  H01L33/20 ,  H01L33/18 ,  H01L33/08 ,  H01L33/00 ,  B82Y20/00

CPC classification number: H01L33/24 ,  B82Y20/00 ,  H01L33/005 ,  H01L33/08 ,  H01L33/18 ,  H01L33/20

Abstract: There is provided a nanostructure semiconductor light emitting device including a base layer formed of a first conductivity-type semiconductor, a first insulating layer disposed on the base layer and having a plurality of first openings exposing partial regions of the base layer, a plurality of nanocores disposed in the exposed regions of the base layer and formed of the first conductivity-type semiconductor, an active layer disposed on surfaces of the plurality of nanocores positioned to be higher than the first insulating layer, a second insulating layer disposed on the first insulating layer and having a plurality of second openings surrounding the plurality of nanocores and the active layer disposed on the surfaces of the plurality of nanocores, and a second conductivity-type semiconductor layer disposed on the surface of the active layer positioned to be higher than the second insulating layer.

公开(公告)号：US09508893B2

公开(公告)日：2016-11-29

申请号：US14764484

申请日：2014-01-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam-Goo Cha ,  Dong-Ho Kim ,  Geon-Wook Yoo

IPC: H01L33/00 ,  H01L33/44 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/36 ,  H01L33/06 ,  H01L33/38

CPC classification number: H01L33/06 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/36 ,  H01L33/382 ,  H01L33/387 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: There is provided a method for manufacturing a nanostructure semiconductor light emitting device, including: forming a mask having a plurality of openings on a base layer; growing a first conductivity-type semiconductor layer on exposed regions of the base layer such that the plurality of openings are filled, to form a plurality of nanocores; partially removing the mask such that side surfaces of the plurality of nanocores are exposed; heat-treating the plurality of nanocores after partially removing the mask; sequentially growing an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores to form a plurality of light emitting nanostructures, after the heat treatment; and planarizing upper parts of the plurality of light emitting nanostructures such that upper surfaces of the nanocores are exposed.

Abstract translation: 提供了一种制造纳米结构半导体发光器件的方法，包括：在基底层上形成具有多个开口的掩模; 在所述基底层的暴露区域上生长第一导电型半导体层，使得所述多个开口被填充，以形成多个纳米孔; 部分地去除所述掩模，使得所述多个纳米孔的侧表面暴露; 在部分去除掩模之后对多个纳米孔进行热处理; 在所述多个纳米孔的表面上依次生长有源层和第二导电型半导体层，以在所述热处理之后形成多个发光纳米结构; 并且平坦化多个发光纳米结构的上部，使得纳米孔的上表面被暴露。

公开(公告)号：US09525102B2

公开(公告)日：2016-12-20

申请号：US14764349

申请日：2014-01-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam-Goo Cha ,  Geon-Wook Yoo ,  Han-Kyu Seong

IPC: H01L33/24 ,  H01L33/08 ,  H01L33/00 ,  H01L33/20 ,  H01L33/18

CPC classification number: H01L33/20 ,  H01L33/005 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24

Abstract: There is provided a method of manufacturing a nanostructure semiconductor light emitting device including providing a base layer formed of a first conductivity-type semiconductor, forming a mask including an etch stop layer on the base layer, forming a plurality of openings with regions of the base layer exposed therethrough, in the mask; forming a plurality of nanocores by growth of the first conductivity-type semiconductor on the exposed regions of the base layer to fill the plurality of openings, partially removing the mask using the etch stop layer to expose side portions of the plurality of nanocores, and sequentially growth of an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores.

Abstract translation: 提供一种制造纳米结构半导体发光器件的方法，包括提供由第一导电型半导体形成的基底层，在基底层上形成包括蚀刻停止层的掩模，形成多个具有基底区域的开口 在面罩中暴露于其中的层; 通过在基底层的暴露区域上生长第一导电类型半导体以填充多个开口而形成多个纳米孔，使用蚀刻停止层部分地去除掩模以暴露多个纳米孔的侧部，并依次 在多个纳米孔的表面上生长活性层和第二导电型半导体层。