公开(公告)号：US11978704B2

公开(公告)日：2024-05-07

申请号：US16933544

申请日：2020-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changseok Lee ,  Hyeonjin Shin ,  Seongjun Park ,  Donghyun Im ,  Hyun Park ,  Keunwook Shin ,  Jongmyeong Lee ,  Hanjin Lim

IPC: H01L23/532

CPC classification number: H01L23/53276 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Example embodiments relate to a wiring structure, a method of forming the same, and an electronic device employing the same. The wiring structure includes a first conductive material layer and a nanocrystalline graphene layer on the first conductive material layer in direct contact with the metal layer.

公开(公告)号：US11626489B2

公开(公告)日：2023-04-11

申请号：US17541871

申请日：2021-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Lee ,  Hyeonjin Shin ,  Dongwook Lee ,  Seongjun Park ,  Kiyoung Lee ,  Eunkyu Lee ,  Sanghyun Jo ,  Jinseong Heo

IPC: H01L31/0352 ,  H01L29/16 ,  H01L31/09 ,  H01L31/028 ,  H01L31/101 ,  H01L51/05 ,  H01L51/00 ,  H01L27/144 ,  H01L27/146 ,  H01L27/15 ,  H01L29/12 ,  H01L27/30

Abstract: Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

公开(公告)号：US11342414B2

公开(公告)日：2022-05-24

申请号：US17001925

申请日：2020-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun Lee ,  Haeryong Kim ,  Hyeonjin Shin ,  Seunggeol Nam ,  Seongjun Park

IPC: H01L29/08 ,  H01L29/417 ,  H01L29/04 ,  H01L29/06 ,  H01L29/267 ,  H01L29/78 ,  H01L21/285 ,  H01L29/45 ,  H01L29/16 ,  H01L29/165

Abstract: A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.

公开(公告)号：US10727182B2

公开(公告)日：2020-07-28

申请号：US16257189

申请日：2019-01-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae Song ,  Seunggeol Nam ,  Yeonchoo Cho ,  Seongjun Park ,  Hyeonjin Shin ,  Jaeho Lee

IPC: H01L23/48 ,  H01L23/532 ,  H01L21/768 ,  H01L23/522

Abstract: Example embodiments relate to a layer structure having a diffusion barrier layer, and a method of manufacturing the same. The layer structure includes first and second material layers and a diffusion barrier layer therebetween. The diffusion barrier layer includes a nanocrystalline graphene (nc-G) layer. In the layer structure, the diffusion barrier layer may further include a non-graphene metal compound layer or a graphene layer together with the nc-G layer. One of the first and second material layers is an insulating layer, a metal layer, or a semiconductor layer, and the remaining layer may be a metal layer.

公开(公告)号：US10269975B2

公开(公告)日：2019-04-23

申请号：US15054871

申请日：2016-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongjun Park ,  Jaeho Lee ,  Changho Ra ,  Wonjong Yoo ,  Faisal Ahmed ,  Zheng Yang ,  Xiaochi Liu

IPC: H01L29/18 ,  H01L29/786 ,  H01L29/24 ,  H01L21/467 ,  H01L29/66 ,  H01L29/04 ,  H01L29/06 ,  H01L29/16 ,  H01L29/778

Abstract: An electronic device includes a 2D material layer having a bandgap. The 2D material layer includes two multilayer 2D material regions and a channel region therebetween. A first electrode electrically contacts one of the multilayer 2D material regions, and a second electrode electrically contacts the other of the multilayer 2D material regions.

公开(公告)号：US10153163B2

公开(公告)日：2018-12-11

申请号：US15611935

申请日：2017-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin Shin ,  Sangwon Kim ,  Seongjun Park

IPC: H01L21/033 ,  H01L21/02 ,  C08K3/38 ,  C08K3/30 ,  C08K5/56 ,  C08K3/22 ,  C09D7/63 ,  C09D7/61 ,  G03F7/09 ,  H01L21/311

Abstract: Example embodiments relate to a hardmask composition and/or a method of forming a fine pattern by using the hardmask composition, wherein the hardmask composition includes at least one of a two-dimensional layered nanostructure and a precursor thereof, and a solvent, and an amount of the at least one of a two-dimensional layered nanostructure and the precursor is about 0.01 part to about 40 parts by weight based on 100 parts by weight of the hardmask composition.

公开(公告)号：US10134628B2

公开(公告)日：2018-11-20

申请号：US15172908

申请日：2016-06-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae Song ,  Seunggeol Nam ,  Seongjun Park ,  Keunwook Shin ,  Hyeonjin Shin ,  Jaeho Lee ,  Changseok Lee ,  Yeonchoo Cho

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/485 ,  H01L21/285 ,  H01L29/45

Abstract: A multilayer structure includes a first material layer, a second material layer, and a diffusion barrier layer. The second material layer is connected to the first material layer. The second material layer is spaced apart from the first material layer. The diffusion barrier layer is between the first material layer and the second material layer. The diffusion barrier layer may include a two-dimensional (2D) material. The 2D material may be a non-graphene-based material, such as a metal chalcogenide-based material having a 2D crystal structure. The first material layer may be a semiconductor or an insulator, and the second material layer may be a conductor. At least a part of the multilayer structure may constitute an interconnection for an electronic device.

公开(公告)号：US10121854B2

公开(公告)日：2018-11-06

申请号：US15605057

申请日：2017-05-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Kiyoung Lee ,  Jaeho Lee ,  Seongjun Park

IPC: H01L29/78 ,  H01L29/06 ,  H01L21/225 ,  H01L29/423 ,  H01L29/66 ,  H01L29/417 ,  H01L29/786

Abstract: Provided are electronic devices and methods of manufacturing same. An electronic device includes an energy barrier forming layer on a substrate, an upper channel material layer on the substrate, and a gate electrode that covers the upper channel material layer and the energy barrier forming layer. The gate electrode includes a side gate electrode portion that faces a side surface of the energy barrier forming layer. The side gate electrode may be configured to cause an electric field to be applied directly on the energy barrier forming layer via the side surface of the energy barrier forming layer, thereby enabling adjustment of the energy barrier between the energy barrier forming layer and the upper channel material layer. The electronic device may further include a lower channel material layer that is provided on the substrate and does not contact the upper channel material layer.

公开(公告)号：US09989853B2

公开(公告)日：2018-06-05

申请号：US14791912

申请日：2015-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin Shin ,  Sangwon Kim ,  Seongjun Park

IPC: G03F7/11 ,  H01L21/47 ,  H01L21/4757 ,  C08K3/38 ,  C08K3/30 ,  G03F7/40 ,  C08G83/00 ,  G03F7/09

Abstract: A hardmask composition includes a first material including one of an aromatic ring-containing monomer and a polymer containing a repeating unit including an aromatic ring-containing monomer, a second material including at least one of a hexagonal boron nitride and a precursor thereof, a chalcogenide-based material and a precursor thereof, and a two-dimensional carbon nanostructure and a precursor thereof, the two-dimensional carbon nanostructure containing about 0.01 atom % to about 40 atom % of oxygen, and a solvent.

公开(公告)号：US09735233B2

公开(公告)日：2017-08-15

申请号：US14932395

申请日：2015-11-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Kiyoung Lee ,  Jaeho Lee ,  Seongjun Park

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L21/225 ,  H01L29/417 ,  H01L29/786

CPC classification number: H01L29/0665 ,  H01L21/2253 ,  H01L29/0649 ,  H01L29/41733 ,  H01L29/4236 ,  H01L29/42384 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/785 ,  H01L29/78648 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78687 ,  H01L29/78696

Abstract: Provided are electronic devices and methods of manufacturing same. An electronic device includes an energy barrier forming layer on a substrate, an upper channel material layer on the substrate, and a gate electrode that covers the upper channel material layer and the energy barrier forming layer. The gate electrode includes a side gate electrode portion that faces a side surface of the energy barrier forming layer. The side gate electrode may be configured to cause an electric field to be applied directly on the energy barrier forming layer via the side surface of the energy barrier forming layer, thereby enabling adjustment of the energy barrier between the energy barrier forming layer and the upper channel material layer. The electronic device may further include a lower channel material layer that is provided on the substrate and does not contact the upper channel material layer.