中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

28 records (took 0.03 seconds)

    Vertical memory devices and methods of manufacturing vertical memory devices
    2.
    发明授权
    Vertical memory devices and methods of manufacturing vertical memory devices 有权

    公开(公告)号：US10373972B2

    公开(公告)日：2019-08-06

    申请号：US15943861

    申请日：2018-04-03

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： An-Soo Park ,  Sung-Hoon Kim ,  Pan-Suk Kwak

    IPC: G11C11/34 ,  H01L27/11582 ,  G11C16/24 ,  G11C16/04

    Abstract: A vertical memory device and a method of manufacturing the same, the device including a cell array including cell regions spaced apart from each other in a second direction, each cell region including a regularly arranged plurality of vertical channels; bit-lines extending in the second direction, the bit-lines being spaced apart from each other in a first direction crossing the second direction; and bit-line contacts respectively electrically connecting the vertical channels and the bit-lines, wherein each cell region includes a sub isolation region configured to electrically isolate the cell region in the second direction, the sub isolation region extending in the first direction, the vertical channels are classified into a plurality of types according to a distance from the sub isolation region in the second direction in each cell region, and the bit-line contacts are configured to electrically connect each bit-line to at least two vertical channels having different types.

    MEMORY DEVICE INCLUDING ANTIFUSE MEMORY CELL ARRAY AND MEMORY SYSTEM INCLUDING THE MEMORY DEVICE
    4.
    发明申请
    MEMORY DEVICE INCLUDING ANTIFUSE MEMORY CELL ARRAY AND MEMORY SYSTEM INCLUDING THE MEMORY DEVICE 审中-公开
    包括防病毒存储器单元阵列和包含存储器件的存储器系统的存储器件

    公开(公告)号：US20130294141A1

    公开(公告)日：2013-11-07

    申请号：US13803612

    申请日：2013-03-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Se-Il Oh ,  Sung-Hoon Kim ,  Soo-Young Kim ,  Joung-Yeal Kim ,  Ho-Cheol Lee

    IPC: G11C17/18 ,  G11C17/16

    CPC classification number: G11C17/18 ,  G11C17/16

    Abstract: A memory device includes a memory cell array, a column decoder, and a row decoder. The row decoder includes a first word line driver and a second word line driver. The first word line driver is configured to electrically coupled to a first set of antifuse memory cells coupled to a first word line. The second word line driver is configured to electrically coupled to a second set of antifuse memory cells coupled to a second word line. The first set of antifuse memory cells are arranged in first and third rows of the memory cell array, and the second set of antifuse memory cells are arranged in second and fourth rows of the memory cell array. The second row is arranged between the first and third rows.

    Abstract translation: 存储器件包括存储单元阵列，列解码器和行解码器。 行解码器包括第一字线驱动器和第二字线驱动器。 第一字线驱动器被配置为电耦合到耦合到第一字线的第一组反熔丝存储器单元。 第二字线驱动器被配置为电耦合到耦合到第二字线的第二组反熔丝存储器单元。 第一组反熔丝存储单元布置在存储单元阵列的第一行和第三行中，第二组反熔丝存储单元布置在存储单元阵列的第二行和第四行中。 第二排布置在第一行和第三行之间。

    Vertical memory device
    5.
    发明授权
    Vertical memory device 有权

    公开(公告)号：US11991883B2

    公开(公告)日：2024-05-21

    申请号：US17693861

    申请日：2022-03-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Chang-Bum Kim ,  Sung-Hoon Kim

    IPC: H01L23/528 ,  H10B43/10 ,  H10B43/27 ,  H10B43/30 ,  H10B43/40

    CPC classification number: H10B43/27 ,  H01L23/528 ,  H10B43/10 ,  H10B43/30 ,  H10B43/40

    Abstract: A vertical memory device includes a gate line structure including a cell region in which a vertical channel structure is formed, and a first connection region and a second connection region which are respectively arranged at first and second ends of the cell region in a first direction. Each of the first connection region and the second connection region includes a first protrusion of the first gate line and a second protrusion of the second gate line which are parallel to a top surface of the substrate and arranged as steps in a second direction perpendicular to the first direction. The first protrusion of the second connection region is arranged diagonally from the first protrusion of the first connection region with respect to a center line of the cell region which is parallel to the first direction.

    Method for transmitting data in CIoT system and device therefor
    6.
    发明授权
    Method for transmitting data in CIoT system and device therefor 有权

    公开(公告)号：US11589208B2

    公开(公告)日：2023-02-21

    申请号：US15773957

    申请日：2016-11-04

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung-Hoon Kim ,  Sung Hwan Won ,  Song-Yean Cho ,  Young-Kyo Baek ,  Sung-Jin Park

    IPC: H04W8/08 ,  H04W28/02 ,  H04W8/02

    Abstract: The present disclosure provides a method whereby a mobility management entity (MME) in a cellular communication system transmits uplink data, the method comprising: receiving uplink data from a terminal; determining if the received uplink data is an Internet Protocol (IP) packet by examining the uplink data; transmitting the uplink data to a destination node via a packet data network (PDN) if the uplink data is an IP packet; and transmitting the uplink data to the destination node via a service capability exposure function (SCEF) if the uplink data is not an IP packet, wherein the uplink data comprises an indicator for indicating whether the uplink data is an IP packet.

    VERTICAL MEMORY DEVICE
    7.
    发明申请
    VERTICAL MEMORY DEVICE 有权

    公开(公告)号：US20220199647A1

    公开(公告)日：2022-06-23

    申请号：US17693861

    申请日：2022-03-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Chang-Bum Kim ,  Sung-Hoon Kim

    IPC: H01L27/11582 ,  H01L23/528 ,  H01L27/11568 ,  H01L27/11565 ,  H01L27/11573

    Abstract: A vertical memory device includes a gate line structure including a cell region in which a vertical channel structure is formed, and a first connection region and a second connection region which are respectively arranged at first and second ends of the cell region in a first direction. Each of the first connection region and the second connection region includes a first protrusion of the first gate line and a second protrusion of the second gate line which are parallel to a top surface of the substrate and arranged as steps in a second direction perpendicular to the first direction. The first protrusion of the second connection region is arranged diagonally from the first protrusion of the first connection region with respect to a center line of the cell region which is parallel to the first direction.

    METHOD AND APPARATUS FOR COMMUNICATING USING UNLICENSED BANDS IN MOBILE COMMUNICATION SYSTEM
    10.
    发明申请
    METHOD AND APPARATUS FOR COMMUNICATING USING UNLICENSED BANDS IN MOBILE COMMUNICATION SYSTEM 审中-公开
    在移动通信系统中使用未经许可的通信的通信方法和装置

    公开(公告)号：US20160066325A1

    公开(公告)日：2016-03-03

    申请号：US14841029

    申请日：2015-08-31

    Applicant: Samsung Electronics Co., Ltd

    Inventor： Sung-Hoon Kim ,  Young-Kyo Baek ,  Kyeong-In Jeong ,  Sang-Bum Kim ,  Woo-Seong Kim ,  Soeng-Hun Kim ,  Jae-Hyuk Jang ,  Gert Jan Van Lieshout

    IPC: H04W72/04

    CPC classification number: H04W74/0816 ,  H04W72/1215 ,  H04W84/12

    Abstract: The present disclosure relates to a communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4G system with a technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. A method for performing communication using an unlicensed band includes reserving a channel of the unlicensed band using a control frame supporting WLAN by a WLAN module, when reserving the channel of the unlicensed band succeeds, determining whether the channel of the unlicensed band is used by a mobile communication module, and transmitting data supporting the unlicensed band through the reserved channel of the unlicensed band.

    Abstract translation: 本公开涉及用于利用物联网（IoT）技术来融合第五代（5G）通信系统以用于支持超越4G系统的高数据速率的通信方法和系统。 本发明可以应用于基于5G通信技术和智能家居，智能建筑，智能城市，智能汽车，连接汽车，医疗保健，数字教育，智能零售，安全和智能汽车的IoT相关技术的智能服务， 安全服务。 一种使用非授权频带执行通信的方法包括：当保留非许可频带的信道成功时，使用支持WLAN的控制帧来保留非许可频带的信道，确定无许可频带的信道是否被 移动通信模块，以及通过非许可频带的保留信道发送支持非许可频带的数据。

Patent Agency Ranking