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公开(公告)号：US12182486B2
公开(公告)日：2024-12-31
申请号：US17491739
申请日：2021-10-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sangwoon Lee , Joohyun Jeon , Sungjin Kim , Seunghyun Kim , Wonki Roh , Chulwoo Park , Seongjae Byeon , Taeyoon An , Hyoeun Jung
IPC: G06F30/3308 , G06F30/25
Abstract: A method of modeling damages to a crystal caused by an incident particle includes obtaining particle information and crystal information; estimating energy loss of the incident particle based on the particle information and the crystal information; estimating a volume of a vacancy based on the energy loss; estimating a vacancy reaction based on the crystal information and the volume of the vacancy; and generating output data based on the vacancy reaction, the output data including quantification data of the damages.
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公开(公告)号：US20220268830A1
公开(公告)日：2022-08-25
申请号：US17495487
申请日：2021-10-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Taeyoon An , Sangwoon Lee , Sungjin Kim , Seunghyun Kim , Wonki Roh , Chulwoo Park , Seongjae Byeon , Joohyun Jeon , Hyoeun Jung
Abstract: A method for predicting a defect in a semiconductor device includes: calculating a first probability that particles will be generated in a semiconductor element by radiation; calculating a second probability that damage will occur in the semiconductor element due to the particles; generating a training data set using input data and simulation data, the input data including damage data generated using the first probability and the second probability and including at least one of a position in which the damage will occur and an amount of the damage, impurity concentration of impurities doped in at least a portion of the semiconductor element, and structural data of the semiconductor element, and the simulation data including electrical characteristics of the semiconductor element obtained as a result of a simulation based on the input data; and training a machine learning model based on the training data set to generate a defect prediction model.
