INSPECTING APPARATUS BASED ON HYPERSPECTRAL IMAGING

    公开(公告)号:US20200184624A1

    公开(公告)日:2020-06-11

    申请号:US16444719

    申请日:2019-06-18

    Abstract: Provided is a hyperspectral imaging (HSI)-based inspection apparatus capable of quickly and stably performing two-dimensional (2D) HSI for an inspection object, and accordingly, capable of quickly and accurately inspecting the inspection object. The HSI-based inspection apparatus includes: a stage on which an inspection object is arranged; an optical system configured to allow light to be incident on the inspection object and emit the light reflected from the inspection object; a scan mirror configured to reflect the emitted light from the optical system while rotating; and a hyperspectral camera configured to obtain an image having a wavelength direction and a line direction as two axes for light reflected from the scan mirror, wherein, by using the rotation of the scan mirror, the hyperspectral camera is configured to perform the 2D HSI for the inspection object.

    METHOD OF INSPECTING PATTERN DEFECT
    3.
    发明申请

    公开(公告)号:US20170192052A1

    公开(公告)日:2017-07-06

    申请号:US15283466

    申请日:2016-10-03

    CPC classification number: G01R31/307

    Abstract: Provided is a method of inspecting a pattern defect. The method includes: applying a voltage to an object to be inspected and measuring an inspection signal generated in a pattern of the object to be inspected due to the voltage applied to the object to be inspected over time; generating an intensity image showing a relationship between an intensity of the inspection signal measured in the pattern and a time by processing the inspection signal; and detecting a pattern defect position by comparing the intensity image with a comparative intensity image.

    MONITORING APPARATUS AND SEMICONDUCTOR MANUFACTURING APPARATUS INCLUDING THE SAME

    公开(公告)号:US20190139796A1

    公开(公告)日:2019-05-09

    申请号:US15956192

    申请日:2018-04-18

    Abstract: An apparatus for manufacturing a semiconductor device is provided. The apparatus for manufacturing a semiconductor device may include a mass flow controller configured to control a flow of a process gas supplied to a process chamber, the mass flow controller configured to adjust an outflow rate of the process gas exiting the mass flow controller in response to a correction signal, the correction signal generated based on a difference between an inflow rate of the process gas flowing into the mass flow controller and a reference flow rate, a sensor configured to measure a chamber pressure inside the process chamber, an exhaust valve configured to adjust an exhaust speed of an exhaust gas exhausted from the process chamber; and a monitoring apparatus configured to detect a defect of the mass flow controller based on the correction signal, the chamber pressure, and the exhaust speed of the exhaust valve.

    CONDUCTIVE ATOMIC FORCE MICROSCOPE AND METHOD OF OPERATING THE SAME
    6.
    发明申请
    CONDUCTIVE ATOMIC FORCE MICROSCOPE AND METHOD OF OPERATING THE SAME 有权
    导电原子力显微镜及其操作方法

    公开(公告)号:US20160033550A1

    公开(公告)日:2016-02-04

    申请号:US14694115

    申请日:2015-04-23

    CPC classification number: G01Q60/40 G01Q70/06

    Abstract: A conductive atomic force microscope including a plurality of probe structures each including a probe and a cantilever connected thereto, a power supplier applying a bias voltage, a current detector detecting a first current flowing between a sample object and each of the probes and a second current flowing between a measurement object and each of the probes, and calculating representative currents for the sample and measurement objects based on the first and second currents, respectively, and a controller calculating a ratio between representative currents of the sample object measured by each of the probe structures, calculating a scaling factor for scaling the representative current with respect to the measurement object measured by each of the probes, and determine a reproducible current measurement value based on the second measurement current and the scaling factor may be provided.

    Abstract translation: 一种导电原子力显微镜,包括多个探针结构,每个探针结构包括探针和连接到其上的悬臂,施加偏置电压的电源,检测在样品物体和每个探针之间流动的第一电流的电流检测器和第二电流 在测量对象和每个探针之间流动,并且基于第一和第二电流分别计算样本和测量对象的代表性电流,以及控制器,计算由每个探针测量的样本对象的代表性电流之间的比率 计算相对于由每个探针测量的测量对象的代表性电流的缩放因子,并且可以提供基于第二测量电流和缩放因子来确定可重现的电流测量值。

    METHOD OF INSPECTING WAFER
    7.
    发明申请
    METHOD OF INSPECTING WAFER 有权
    检查波形的方法

    公开(公告)号:US20130301903A1

    公开(公告)日:2013-11-14

    申请号:US13785307

    申请日:2013-03-05

    Abstract: A method of inspecting a wafer includes performing a fabricating process on a wafer, irradiating broadband light on the wafer, such that the light is reflected from the wafer, generating a spectral cube by using the light reflected from the wafer, extracting a spectrum of a desired wafer inspection region from the spectral cube, and inspecting the desired wafer inspection region by analyzing the extracted spectrum.

    Abstract translation: 一种检查晶片的方法包括在晶片上执行制造工艺,在晶片上照射宽带光,使得光从晶片反射,通过使用从晶片反射的光产生光谱立方体, 来自光谱立方体的期望晶片检查区域,并且通过分析所提取的光谱来检查期望的晶片检查区域。

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