公开(公告)号：US12027218B2

公开(公告)日：2024-07-02

申请号：US17554321

申请日：2021-12-17

Applicant: SanDisk Technologies LLC

Inventor： Xue Bai Pitner ,  Prafful Golani ,  Ravi Kumar

IPC: G11C16/04 ,  G11C16/34 ,  G11C16/26 ,  H10B41/27 ,  H10B43/27

CPC classification number: G11C16/3459 ,  G11C16/0483 ,  G11C16/26 ,  H10B41/27 ,  H10B43/27

Abstract: A method for performing a program verify operation with respect to a target memory cell in a memory structure of a non-volatile memory system is provided. The method may include the step of determining a location of the target memory cell within the structure and, based upon the determined location of the target cell and with respect to each programmable memory state: (1) applying a first sense signal at a first point in time, and (2) applying a second sense signal at a second point in time. A time interval between the first and the second points in time is equal to a predetermined optimal time period plus or minus an offset parameter time value.

公开(公告)号：US20230197173A1

公开(公告)日：2023-06-22

申请号：US17554321

申请日：2021-12-17

Applicant: SanDisk Technologies LLC

Inventor： Xue Bai Pitner ,  Prafful Golani ,  Ravi Kumar

IPC: G11C16/34 ,  G11C16/04

CPC classification number: G11C16/3459 ,  G11C16/0483 ,  G11C16/26

Abstract: A method for performing a program verify operation with respect to a target memory cell in a memory structure of a non-volatile memory system, wherein the method may comprise determining a location of the target memory cell within the structure and, based upon the determined location of the target cell and with respect to each programmable memory state: (1) applying a first sense signal at a first point in time, and (2) applying a second sense signal at a second point in time, wherein a time interval between the first and the second points in time is equal to a predetermined optimal time period plus or minus an offset parameter time value.