公开(公告)号：US08871628B2

公开(公告)日：2014-10-28

申请号：US12689927

申请日：2010-01-19

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: H01L29/22 ,  H01L21/02 ,  H01L31/0224 ,  H01L31/078 ,  H01L31/18 ,  H01L31/075

CPC classification number: H01L21/02554 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/075 ,  H01L31/078 ,  H01L31/1884 ,  Y02E10/50

Abstract: An electrode structure comprises a semiconductor junction comprising an n-type semiconductor layer and a p-type semiconductor layer; a hole exnihilation layer on the p-type semiconductor layer; and a transparent electrode layer on the hole exnihilation layer. The electrode structure further comprises a conductive layer between the hole exnihilation layer and the transparent electrode layer. In the electrode structure, one or more of the hole exnihilation layer, the conductive layer and the transparent electrode layer may be formed by an atomic layer deposition. In the electrode structure, a transparent electrode formed of a degenerated n-type oxide semiconductor does not come in direct contact with a p-type semiconductor, and thus, annihilation or recombination of holes generated in the p-type semiconductor can be reduced, which increases the carrier generation efficiency. Further, the electric conductivity of the transparent electrode is increased by the conductive layer, which improves electrical characteristics of a device.

Abstract translation: 电极结构包括包含n型半导体层和p型半导体层的半导体结; p型半导体层上的空穴除外层; 以及在透孔层上的透明电极层。 所述电极结构还包括在所述孔除硅层和所述透明电极层之间的导电层。 在电极结构中，可以通过原子层沉积形成空穴除外层，导电层和透明电极层中的一个或多个。 在电极结构中，由退化的n型氧化物半导体形成的透明电极不与p型半导体直接接触，因此可以减少在p型半导体中产生的空穴的湮灭或复合，其中 提高载波生成效率。 此外，通过导电层增加透明电极的导电性，这改善了器件的电特性。

公开(公告)号：US08840958B2

公开(公告)日：2014-09-23

申请号：US13368265

申请日：2012-02-07

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/44

CPC classification number: C23C16/45548 ,  C23C16/403 ,  C23C16/4412

Abstract: Performing atomic layer deposition using a combined injector that sequentially injects source precursor and reactant precursor onto a substrate. The source precursor is injected into the injector via a first channel, injected onto the substrate and then discharged through a first exhaust portion. The reactant precursor is then injected into the injector via a second channel separate from the first channel, injected onto the substrate and then discharged through a second exhaust portion separate from the first exhaust portion. After injecting the source precursor or the reactant precursor, a purge gas may be injected into the injector and discharged to remove any source precursor or reactant precursor remaining in paths from the first or second channel to the first or second exhaust portion.

Abstract translation: 使用将源前体和反应物前体依次注入到基底上的组合注射器进行原子层沉积。 源前体经由第一通道注入注射器，注射到基底上，然后通过第一排气部分排出。 然后将反应物前体经由与第一通道分开的第二通道注入到注射器中，注入到基底上，然后通过与第一排气部分分开的第二排气部分排出。 在注入源前体或反应物前体之后，可将吹扫气体注入到喷射器中并排出以除去保留在从第一或第二通道到第一或第二排气部分的路径中的任何源前体或反应物前体。

公开(公告)号：US08771791B2

公开(公告)日：2014-07-08

申请号：US13273076

申请日：2011-10-13

Applicant: Sang In Lee ,  Chang Wan Hwang

Inventor： Sang In Lee ,  Chang Wan Hwang

IPC: C23C16/00 ,  C23C16/40

CPC classification number: C23C16/45551 ,  C23C16/403 ,  C23C16/45536

Abstract: Atomic layer deposition is performed by reciprocating a susceptor in two directions, subjecting a substrate on the susceptor to two different sequences of processes. By subjecting the susceptor to different sequences of processes, the substrate undergoes different processes that otherwise would have required an additional set of injectors or reactors. The reduced number of injectors or reactors enables a more compact deposition device, and reduces the cost associated with the deposition device.

Abstract translation: 通过使感受器沿两个方向往复移动来进行原子层沉积，对基座上的基底进行两个不同的处理顺序。 通过对基座进行不同的工艺顺序，衬底经历不同的工艺，否则将需要额外的一组注射器或反应器。 减少注射器或反应器的数量使得能够实现更紧凑的沉积装置，并降低与沉积装置相关的成本。

公开(公告)号：US08851012B2

公开(公告)日：2014-10-07

申请号：US12560690

申请日：2009-09-16

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: C23C16/00 ,  C23C16/455 ,  C23C16/54

CPC classification number: C23C16/50 ,  C23C16/45514 ,  C23C16/45595 ,  C23C16/54

Abstract: A vapor deposition reactor may include a first electrode including a first channel and at least one first injection hole connected to the first channel. a second electrode electrically separated from the first electrode, and a power source for applying power between the first electrode and the second electrode to generate plasma from a reactant gas between the first electrode and the second electrode. Also provided is a method for forming thin film using the vapor deposition reactor.

Abstract translation: 气相沉积反应器可以包括包括第一通道的第一电极和连接到第一通道的至少一个第一注入孔。 与第一电极电分离的第二电极和用于在第一电极和第二电极之间施加电力以从第一电极和第二电极之间的反应气体产生等离子体的电源。 还提供了使用蒸镀反应器形成薄膜的方法。

公开(公告)号：US08697198B2

公开(公告)日：2014-04-15

申请号：US13410545

申请日：2012-03-02

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: C23C16/50 ,  C23C16/455

CPC classification number: C23C16/50 ,  C23C16/45517 ,  C23C16/45544

Abstract: Embodiments relate to applying a magnetic field across the paths of injected polar precursor molecules to cause spiral movement of the precursor molecules relative to the surface of a substrate. When the polar precursor molecules arrive at the surface of the substrate, the polar precursor molecules make lateral movements on the surface due to their inertia. Such lateral movements of the polar precursor molecules increase the chance that the molecules would find and settle at sites (e.g., nucleation sites, broken bonds and stepped surface locations) or react on the surface of the substrate. Due to the increased chance of absorption or reaction of the polar precursor molecules, the injection time or injection iterations may be reduced.

Abstract translation: 实施例涉及在注入的极性前体分子的路径上施加磁场以引起前体分子相对于基底表面的螺旋运动。 当极性前体分子到达基底表面时，极性前体分子由于其惯性而在表面上产生横向运动。 极性前体分子的这种侧向运动增加了分子在位置（例如成核位点，断裂键和阶梯表面位置）处发现并沉降或在基底表面上反应的机会。 由于极性前体分子的吸收或反应的机会增加，所以可以减少注射时间或注射次数。

公开(公告)号：US08617652B2

公开(公告)日：2013-12-31

申请号：US13536646

申请日：2012-06-28

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: C23C16/30

CPC classification number: D06M11/77 ,  A01N59/16 ,  C23C16/045 ,  C23C16/45544 ,  C23C16/45555 ,  D06M11/45 ,  D06M11/83 ,  Y10T442/20 ,  Y10T442/2098 ,  Y10T442/2984 ,  A01N25/08 ,  A01N2300/00

Abstract: Embodiments relate to depositing on one or more layers of materials on a fiber or fiber containing material using atomic layer deposition (ALD) to provide or enhance functionalities of the fibers or fiber containing material. A layer of material is deposited coated on the fibers or fiber containing textile by causing the relative movement between a fiber or the fiber containing textile and a source injector. The surface of the material is oxidized, nitrified or carbonized to increase the volume of the deposited material. By increasing the volume of the material, the material is subject to compressive stress. The compressive stress renders the fibers or the fiber containing material more rigid, stronger and more resistant against bending force, impact or tensile force.

Abstract translation: 实施例涉及使用原子层沉积（ALD）在含纤维或含纤维材料的一层或多层材料上沉积以提供或增强纤维或含纤维材料的功能性。 通过引起纤维或含有纤维的织物和源注射器之间的相对运动，将一层材料沉积在纤维或含纤维织物上。 材料的表面被氧化，硝化或碳化，以增加沉积材料的体积。 通过增加材料的体积，材料承受压应力。 压缩应力使纤维或含纤维材料更加坚固，更坚固，更抗弯曲力，冲击力或拉力。

公开(公告)号：US08263502B2

公开(公告)日：2012-09-11

申请号：US12539289

申请日：2009-08-11

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/76224 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/0262 ,  H01L21/3141 ,  H01L21/31604

Abstract: A substrate structure is produced by forming a first material layer on a substrate having a recess, removing the first material layer from the portion of the substrate except for the recess using a second material that reacts with the first material, and forming a deposition film from the first material layer using a third material that reacts with the first material. A method of manufacturing a device may include the method of forming a substrate structure.

Abstract translation: 通过在具有凹部的基板上形成第一材料层来制造基板结构，使用与第一材料反应的第二材料从基板的除了凹部的部分除去第一材料层，并从 所述第一材料层使用与所述第一材料反应的第三材料。 制造器件的方法可以包括形成衬底结构的方法。

公开(公告)号：US08770142B2

公开(公告)日：2014-07-08

申请号：US12560705

申请日：2009-09-16

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: C23C16/00 ,  H01L21/306 ,  C23F1/00 ,  H01J7/24 ,  H05B31/26 ,  H01J37/32 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/45578 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32541

Abstract: A plasma generator may include a first electrode extending in one direction, and a second electrode spaced apart from the first electrode. Facing surfaces of the first electrode and the second electrode may have spiral shapes along the one direction. A cross-section of the first electrode and a cross-section of the second electrode, which are perpendicular to the one direction, may have at least partially concentric shapes. An electrode for generating plasma may include a platform extending in one direction, and at least one protruding thread spirally formed on a surface of the platform along the one direction.

Abstract translation: 等离子体发生器可以包括沿一个方向延伸的第一电极和与第一电极间隔开的第二电极。 第一电极和第二电极的面对表面可沿着该一个方向具有螺旋形状。 第一电极的横截面和垂直于一个方向的第二电极的横截面可以具有至少部分同心的形状。 用于产生等离子体的电极可以包括沿着一个方向延伸的平台，以及至少一个突出的螺纹螺旋地沿着该一个方向形成在平台的表面上。

公开(公告)号：US08758512B2

公开(公告)日：2014-06-24

申请号：US12794209

申请日：2010-06-04

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: C23C16/00

CPC classification number: C23C16/45551 ,  C01B21/076 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40

Abstract: A vapor deposition reactor and a method for forming a thin film. The vapor deposition reactor includes at least one first injection portion for injecting a reacting material to a recess in a first portion of the vapor deposition reactor. A second portion is connected to the first space and has a recess connected to the recess of the first portion. The recess of the second portion is maintained to have pressure lower than the pressure in the first space. A third portion is connected to the second space, and an exhaust portion is connected to the third space.

Abstract translation: 蒸镀反应器及薄膜形成方法。 气相沉积反应器包括至少一个用于将反应材料注入到蒸镀反应器的第一部分中的凹部的第一注射部分。 第二部分连接到第一空间并且具有连接到第一部分的凹部的凹部。 第二部分的凹部被保持为具有低于第一空间中的压力的​​压力。 第三部分连接到第二空间，并且排气部分连接到第三空间。

公开(公告)号：US08501633B2

公开(公告)日：2013-08-06

申请号：US13572555

申请日：2012-08-10

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: H01L21/31

CPC classification number: H01L21/76224 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/0262 ,  H01L21/3141 ,  H01L21/31604

Abstract: A substrate structure is produced by forming a first material layer on a substrate having a recess, removing the first material layer from the portion of the substrate except for the recess using a second material that reacts with the first material, and forming a deposition film from the first material layer using a third material that reacts with the first material. A method of manufacturing a device may include the method of forming a substrate structure.

Abstract translation: 通过在具有凹部的基板上形成第一材料层来制造基板结构，使用与第一材料反应的第二材料从基板的除了凹部的部分除去第一材料层，并从 所述第一材料层使用与所述第一材料反应的第三材料。 制造器件的方法可以包括形成衬底结构的方法。