公开(公告)号：US09166098B2

公开(公告)日：2015-10-20

申请号：US12338496

申请日：2008-12-18

申请人： Sang Won Kang ,  Seong Ju Park ,  Min Ki Kwon ,  Sang Jun Lee ,  Joo Young Cho ,  Yong Chun Kim ,  Sang Heon Han ,  Dong Ju Lee ,  Jeong Tak Oh ,  Je Won Kim

发明人： Sang Won Kang ,  Seong Ju Park ,  Min Ki Kwon ,  Sang Jun Lee ,  Joo Young Cho ,  Yong Chun Kim ,  Sang Heon Han ,  Dong Ju Lee ,  Jeong Tak Oh ,  Je Won Kim

IPC分类号： H01L33/00 ,  H01S5/30 ,  H01S5/00 ,  H01S5/32 ,  H01L33/06 ,  H01L33/02 ,  H01L33/32

CPC分类号： H01L33/06 ,  H01L33/025 ,  H01L33/32

摘要： There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer.

摘要翻译： 提供了包括多量子阱结构的有源层的氮化物半导体发光器件，所述氮化物半导体发光器件包括：衬底; 以及依次层叠在所述基板上的缓冲层，n型氮化物半导体层，有源层和p型氮化物半导体层，其中，所述有源层由多个势垒层和 多个阱层彼此交替布置，并且多个势垒层中的至少一个包括第一阻挡层，其包括掺杂有p掺杂剂和未掺杂阻挡层的p掺杂势垒层。

公开(公告)号：US20100019223A1

公开(公告)日：2010-01-28

申请号：US12338496

申请日：2008-12-18

申请人： Sang Won Kang ,  Seong Ju Park ,  Min Ki Kwon ,  Sang Jun Lee ,  Joo Young Cho ,  Yong Chun Kim ,  Sang Heon Han ,  Dong Ju Lee ,  Jeong Tak Oh ,  Je Won Kim

发明人： Sang Won Kang ,  Seong Ju Park ,  Min Ki Kwon ,  Sang Jun Lee ,  Joo Young Cho ,  Yong Chun Kim ,  Sang Heon Han ,  Dong Ju Lee ,  Jeong Tak Oh ,  Je Won Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  H01L33/025 ,  H01L33/32

摘要： There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer.

摘要翻译： 提供了包括多量子阱结构的有源层的氮化物半导体发光器件，所述氮化物半导体发光器件包括：衬底; 以及依次层叠在所述基板上的缓冲层，n型氮化物半导体层，有源层和p型氮化物半导体层，其中，所述有源层由多个势垒层和 多个阱层彼此交替布置，并且多个势垒层中的至少一个包括第一阻挡层，其包括掺杂有p掺杂剂和未掺杂阻挡层的p掺杂势垒层。

公开(公告)号：US08410497B2

公开(公告)日：2013-04-02

申请号：US12338438

申请日：2008-12-18

申请人： Sang Won Kang ,  Seong Ju Park ,  Joo Young Cho ,  Il Kyu Park ,  Yong Chun Kim ,  Dong Joon Kim ,  Jeong Tak Oh ,  Je Won Kim

发明人： Sang Won Kang ,  Seong Ju Park ,  Joo Young Cho ,  Il Kyu Park ,  Yong Chun Kim ,  Dong Joon Kim ,  Jeong Tak Oh ,  Je Won Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/02 ,  H01L33/14 ,  H01L33/32 ,  H01L33/387 ,  H01L33/40 ,  H01L33/641

摘要： There is provided a semiconductor light emitting device that can easily dissipate heat, improve current spreading efficiency, and reduce defects by blocking dislocations occurring when a semiconductor layer is grown to thereby increase reliability. A semiconductor light emitting device including a substrate, a light emitting structure having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated, and an n-type electrode and a p-type electrode formed on the n-type semiconductor layer and the p-type semiconductor layer, respectively, according to an aspect of the invention may include: a metal layer formed in the n-type semiconductor layer and contacting the n-type electrode.

摘要翻译： 提供了一种半导体发光器件，其可以容易地散热，提高电流扩散效率，并且通过阻止半导体层生长时发生的位错从而降低可靠性，从而减少缺陷。 一种半导体发光器件，包括基板，依次层叠有n型半导体层，有源层和p型半导体层的发光结构，以及形成在所述n型半导体层上的n型电极和p型电极 n型半导体层和p型半导体层可以包括：形成在n型半导体层中并与n型电极接触的金属层。

公开(公告)号：US20100019258A1

公开(公告)日：2010-01-28

申请号：US12338438

申请日：2008-12-18

申请人： Sang Won KANG ,  Seong Ju Park ,  Joo Young Cho ,  Il Kyu Park ,  Yong Chun Kim ,  Dong Joon Kim ,  Jeong Tak Oh ,  Je Won Kim

发明人： Sang Won KANG ,  Seong Ju Park ,  Joo Young Cho ,  Il Kyu Park ,  Yong Chun Kim ,  Dong Joon Kim ,  Jeong Tak Oh ,  Je Won Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/02 ,  H01L33/14 ,  H01L33/32 ,  H01L33/387 ,  H01L33/40 ,  H01L33/641

摘要： There is provided a semiconductor light emitting device that can easily dissipate heat, improve current spreading efficiency, and reduce defects by blocking dislocations occurring when a semiconductor layer is grown to thereby increase reliability. A semiconductor light emitting device including a substrate, a light emitting structure having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated, and an n-type electrode and a p-type electrode formed on the n-type semiconductor layer and the p-type semiconductor layer, respectively, according to an aspect of the invention may include: a metal layer formed in the n-type semiconductor layer and contacting the n-type electrode.

摘要翻译： 提供了一种半导体发光器件，其可以容易地散热，提高电流扩散效率，并且通过阻止半导体层生长时发生的位错从而降低可靠性，从而减少缺陷。 一种半导体发光器件，包括基板，依次层叠有n型半导体层，有源层和p型半导体层的发光结构，以及形成在所述n型半导体层上的n型电极和p型电极 n型半导体层和p型半导体层可以包括：形成在n型半导体层中并与n型电极接触的金属层。

公开(公告)号：US20140191192A1

公开(公告)日：2014-07-10

申请号：US14235705

申请日：2011-07-29

申请人： Sang Heon Han ,  Hyun Wook Shim ,  Je Won Kim ,  Chu Young Cho ,  Seong Ju Park ,  Sung Tae Kim ,  Jin Tae Kim ,  Yong Chun Kim ,  Sang Jun Lee

发明人： Sang Heon Han ,  Hyun Wook Shim ,  Je Won Kim ,  Chu Young Cho ,  Seong Ju Park ,  Sung Tae Kim ,  Jin Tae Kim ,  Yong Chun Kim ,  Sang Jun Lee

IPC分类号： H01L33/00 ,  H01L33/06

CPC分类号： H01L33/0025 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32

摘要： There is provided a semiconductor light emitting device having improved light emitting efficiency by increasing an inflow of holes into an active layer while preventing an overflow of electrons. The semiconductor light emitting device includes an n-type semiconductor layer; an active layer formed on the n-type semiconductor layer and including at least one quantum well layer and at least one quantum barrier layer alternately stacked therein; an electron blocking layer formed on the active layer and having at least one multilayer structure including three layers having different energy band gaps stacked therein, a layer adjacent to the active layer among the three layers having an inclined energy band structure; and a p-type semiconductor layer formed on the electron blocking layer.

摘要翻译： 提供了一种半导体发光器件，其通过增加空穴流入有源层同时防止电子溢出而具有改善的发光效率。 半导体发光器件包括n型半导体层; 形成在所述n型半导体层上并且包括至少一个量子阱层和交替层叠的至少一个量子势垒层的有源层; 形成在有源层上的电子阻挡层，具有层叠有不同能带隙的三层以上的至少一层多层结构，三层中与有源层相邻的层具有倾斜的能带结构; 以及形成在电子阻挡层上的p型半导体层。

公开(公告)号：US07763881B2

公开(公告)日：2010-07-27

申请号：US12182509

申请日：2008-07-30

申请人： Dong Yul Lee ,  Seong Ju Park ,  Min Ki Kwon ,  Ja Yeon Kim ,  Dong Joon Kim ,  Yong Chun Kim ,  Je Won Kim

发明人： Dong Yul Lee ,  Seong Ju Park ,  Min Ki Kwon ,  Ja Yeon Kim ,  Dong Joon Kim ,  Yong Chun Kim ,  Je Won Kim

IPC分类号： H01L29/06

CPC分类号： H01L33/08 ,  H01L33/44 ,  H01L2933/0083

摘要： There is provided a photonic crystal light emitting device including: a substrate; a plurality of nano rod light emitting structures formed on the substrate to be spaced apart from one another, each of the nano rod light emitting structures including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and first and second electrodes electrically connected to the first and second conductivity type semiconductor layers, respectively, wherein the nano rod light emitting structures are arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the nano rod light emitting structures define a photonic crystal structure. In the photonic crystal light emitting device, the nano rod light emitting structures are arranged to define a photonic crystal to enhance light extraction efficiency.

摘要翻译： 提供了一种光子晶体发光器件，包括：衬底; 形成在所述基板上彼此间隔开的多个纳米棒状发光结构，所述纳米棒状发光结构包括第一导电型半导体层，有源层和第二导电型半导体层; 以及分别与第一和第二导电类型半导体层电连接的第一和第二电极，其中纳米棒发光结构以预定的尺寸和周期排列，以形成从有源层发射的光的光子带隙， 由此纳米棒发光结构限定了光子晶体结构。 在光子晶体发光器件中，纳米棒发光结构被布置成限定光子晶体以增强光提取效率。

公开(公告)号：US20090184334A1

公开(公告)日：2009-07-23

申请号：US12182383

申请日：2008-07-30

申请人： Dong Yul Lee ,  Seong Ju Park ,  Min Ki Kwon ,  Ja Yeon Kim ,  Yong Chun Kim ,  Bang Won Oh ,  Seok Min Hwang ,  Je Won Kim

发明人： Dong Yul Lee ,  Seong Ju Park ,  Min Ki Kwon ,  Ja Yeon Kim ,  Yong Chun Kim ,  Bang Won Oh ,  Seok Min Hwang ,  Je Won Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L2933/0083

摘要： There is provided a photonic crystal light emitting device including: a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween; a transparent electrode layer formed on the second conductivity type semiconductor layer, the transparent electrode layer having a plurality of holes arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the transparent electrode layer includes a photonic crystal structure; and first and second electrode electrically connected to the first conductivity type semiconductor layer and the transparent electrode layer, respectively. The photonic crystal light emitting device has a transparent electrode layer formed of a photonic crystal structure defined by minute holes, thereby improved in light extraction efficiency.

摘要翻译： 提供了一种光子晶体发光器件，包括：发光结构，包括第一和第二导电类型半导体层和插入其间的有源层; 形成在所述第二导电型半导体层上的透明电极层，所述透明电极层具有以预定尺寸和周期排列的多个孔，以形成从所述有源层发射的光的光子带隙，由此所述透明电极层 包括光子晶体结构; 以及分别与第一导电类型半导体层和透明电极层电连接的第一和第二电极。 光子晶体发光器件具有由微孔限定的光子晶体结构形成的透明电极层，从而提高光提取效率。

公开(公告)号：US20090032800A1

公开(公告)日：2009-02-05

申请号：US12182509

申请日：2008-07-30

申请人： Dong Yul Lee ,  Seong Ju Park ,  Min Ki Kwon ,  Ja Yeon Kim ,  Dong Joon Kim ,  Yong Chun Kim ,  Je Won Kim

发明人： Dong Yul Lee ,  Seong Ju Park ,  Min Ki Kwon ,  Ja Yeon Kim ,  Dong Joon Kim ,  Yong Chun Kim ,  Je Won Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/08 ,  H01L33/44 ,  H01L2933/0083

摘要： There is provided a photonic crystal light emitting device including: a substrate; a plurality of nano rod light emitting structures formed on the substrate to be spaced apart from one another, each of the nano rod light emitting structures including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and first and second electrodes electrically connected to the first and second conductivity type semiconductor layers, respectively, wherein the nano rod light emitting structures are arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the nano rod light emitting structures define a photonic crystal structure. In the photonic crystal light emitting device, the nano rod light emitting structures are arranged to define a photonic crystal to enhance light extraction efficiency.

摘要翻译： 提供了一种光子晶体发光器件，包括：衬底; 形成在所述基板上彼此间隔开的多个纳米棒状发光结构，所述纳米棒状发光结构包括第一导电型半导体层，有源层和第二导电型半导体层; 以及分别与第一和第二导电类型半导体层电连接的第一和第二电极，其中纳米棒发光结构以预定的尺寸和周期排列，以形成从有源层发射的光的光子带隙， 由此纳米棒发光结构限定了光子晶体结构。 在光子晶体发光器件中，纳米棒发光结构被布置成限定光子晶体以增强光提取效率。

公开(公告)号：US08405103B2

公开(公告)日：2013-03-26

申请号：US12182383

申请日：2008-07-30

申请人： Dong Yul Lee ,  Seong Ju Park ,  Min Ki Kwon ,  Ja Yeon Kim ,  Yong Chun Kim ,  Bang Won Oh ,  Seok Min Hwang ,  Je Won Kim

发明人： Dong Yul Lee ,  Seong Ju Park ,  Min Ki Kwon ,  Ja Yeon Kim ,  Yong Chun Kim ,  Bang Won Oh ,  Seok Min Hwang ,  Je Won Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L2933/0083

摘要： There is provided a photonic crystal light emitting device including: a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween; a transparent electrode layer formed on the second conductivity type semiconductor layer, the transparent electrode layer having a plurality of holes arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the transparent electrode layer includes a photonic crystal structure; and first and second electrode electrically connected to the first conductivity type semiconductor layer and the transparent electrode layer, respectively. The photonic crystal light emitting device has a transparent electrode layer formed of a photonic crystal structure defined by minute holes, thereby improved in light extraction efficiency.

摘要翻译： 提供了一种光子晶体发光器件，包括：发光结构，包括第一和第二导电类型半导体层和插入其间的有源层; 形成在所述第二导电型半导体层上的透明电极层，所述透明电极层具有以预定尺寸和周期排列的多个孔，以形成从所述有源层发射的光的光子带隙，由此所述透明电极层 包括光子晶体结构; 以及分别与第一导电类型半导体层和透明电极层电连接的第一和第二电极。 光子晶体发光器件具有由微孔限定的光子晶体结构形成的透明电极层，从而提高光提取效率。

公开(公告)号：US07462876B2

公开(公告)日：2008-12-09

申请号：US11584503

申请日：2006-10-23

申请人： Sang Heon Han ,  Bang Won Oh ,  Je Won Kim ,  Hyun Wook Shim ,  Joong Seo Kang ,  Dong Ju Lee

发明人： Sang Heon Han ,  Bang Won Oh ,  Je Won Kim ,  Hyun Wook Shim ,  Joong Seo Kang ,  Dong Ju Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/04 ,  H01L33/32

摘要： Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed on a substrate, an n-side electrode formed on a portion of an upper surface of the n-type nitride semiconductor layer, and at least one intermediate layer formed between the substrate and the n-type nitride semiconductor layer. The intermediate layer has a multilayer structure of three or more layers having different band-gaps, and is positioned below the n-side electrode.

摘要翻译： 本文公开了一种氮化物半导体发光器件，其亮度和可靠性得到改善。 发光器件包括依次形成在衬底上的n型氮化物半导体层，有源层和p型氮化物半导体层，形成在n型氮化物的上表面的一部分上的n侧电极 半导体层以及形成在基板和n型氮化物半导体层之间的至少一个中间层。 中间层具有三层以上具有不同带隙的层的多层结构，位于n侧电极的下方。