公开(公告)号：US20090085043A1

公开(公告)日：2009-04-02

申请号：US12210472

申请日：2008-09-15

申请人： Sang Yeob SONG ,  Jin Hyun LEE ,  Yu Seung KIM ,  Kwang Ki CHOI ,  Pun Jae CHOI ,  Hyun Soo KIM ,  Sang Bum LEE

发明人： Sang Yeob SONG ,  Jin Hyun LEE ,  Yu Seung KIM ,  Kwang Ki CHOI ,  Pun Jae CHOI ,  Hyun Soo KIM ,  Sang Bum LEE

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/32

摘要： Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage characteristic, increase light emission efficiency by lowering an input voltage, and increase reliability of the semiconductor light emitting device by a low-voltage operation, and a method of manufacturing the same. The semiconductor light emitting device includes: an n-type GaN semiconductor layer; an active layer formed on a gallium face of the n-type GaN semiconductor layer; a p-type semiconductor layer formed on the active layer; and an n-type electrode formed on a nitrogen face of the n-type GaN semiconductor layer and including a lanthanum (La)-nickel (Ni) alloy.

摘要翻译： 公开了一种半导体发光器件，其能够提高半导体发光器件的特性，例如正向电压特性和导通电压特性，通过降低输入电压来提高发光效率，并提高半导体发光器件的可靠性 器件的低压工作及其制造方法。 半导体发光器件包括：n型GaN半导体层; 形成在所述n型GaN半导体层的镓面上的有源层; 形成在有源层上的p型半导体层; 以及形成在n型GaN半导体层的氮面上并包含镧（La） - 镍（Ni）合金的n型电极。

公开(公告)号：US20150084537A1

公开(公告)日：2015-03-26

申请号：US14338225

申请日：2014-07-22

申请人： Pun Jae . CHOI ,  Sang Bum LEE ,  Jin Bock LEE ,  Yu Seung KIM ,  Sang Yeob SONG

发明人： Pun Jae . CHOI ,  Sang Bum LEE ,  Jin Bock LEE ,  Yu Seung KIM ,  Sang Yeob SONG

IPC分类号： H01L25/13 ,  H05B33/08 ,  H01L33/50 ,  H01L33/48 ,  H01L33/38 ,  H01L33/54

CPC分类号： H01L25/13 ,  H01L25/0753 ,  H01L33/002 ,  H01L33/0025 ,  H01L33/0029 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/387 ,  H01L33/40 ,  H01L33/44 ,  H01L33/486 ,  H01L33/502 ,  H01L33/504 ,  H01L33/507 ,  H01L33/508 ,  H01L33/54 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01L2224/8592 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2933/0041 ,  H05B33/0803 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure. An uneven structure is formed on a path of light emitted from the active layer.

公开(公告)号：US20100200867A1

公开(公告)日：2010-08-12

申请号：US12767324

申请日：2010-04-26

申请人： Myong Soo CHO ,  Ki Yeol PARK ,  Sang Yeob SONG ,  Si Hyuk LEE ,  Pun Jae CHOI

发明人： Myong Soo CHO ,  Ki Yeol PARK ,  Sang Yeob SONG ,  Si Hyuk LEE ,  Pun Jae CHOI

IPC分类号： H01L33/30

CPC分类号： H01L33/0079

摘要： A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.

摘要翻译： 一种制造垂直结构发光二极管装置的方法，所述方法包括：在基板上依次形成第一导电型III-V族化合物半导体层，有源层和第二导电型III-V族化合物半导体层 成长 将导电基板键合到第二导电型III-V族化合物半导体层; 从第一导电型III-V族化合物半导体层去除用于生长的衬底; 以及由于去除所述用于生长的衬底而在所述第一导电III-V族化合物半导体层的暴露部分上形成电极，其中所述接合导电衬底包括通过向接合界面施加微波而部分地加热金属接合层，同时带来 金属接合层与接合界面接触。

公开(公告)号：US20100099212A1

公开(公告)日：2010-04-22

申请号：US12429458

申请日：2009-04-24

申请人： Jong In YANG ,  Yu Seung KIM ,  Sang Yeob SONG ,  Si Hyuk LEE ,  Tae Hyung KIM

发明人： Jong In YANG ,  Yu Seung KIM ,  Sang Yeob SONG ,  Si Hyuk LEE ,  Tae Hyung KIM

IPC分类号： H01L33/00 ,  H01L21/306 ,  H01L21/26

CPC分类号： H01L21/3086 ,  H01L21/30612 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/32

摘要： There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.

摘要翻译： 提供了在III族氮化物半导体衬底上形成图案的方法。 根据本发明的一个方面的在III族氮化物半导体衬底上形成图案的方法可以包括：将激光束照射到至少一个第一区域以防止III族氮化物半导体衬底中的蚀刻; 以及使用被激光束照射的第一区域作为掩模，蚀刻除了第一区域之外的至少一个第二区域。

公开(公告)号：US20110008924A1

公开(公告)日：2011-01-13

申请号：US12885882

申请日：2010-09-20

申请人： Jong In YANG ,  Yu Seung KIM ,  Sang Yeob SONG ,  Si Hyuk LEE ,  Tae Hyung KIM

发明人： Jong In YANG ,  Yu Seung KIM ,  Sang Yeob SONG ,  Si Hyuk LEE ,  Tae Hyung KIM

IPC分类号： H01L33/30

CPC分类号： H01L21/3086 ,  H01L21/30612 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/32

摘要： There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.

摘要翻译： 提供了在III族氮化物半导体衬底上形成图案的方法。 根据本发明的一个方面的在III族氮化物半导体衬底上形成图案的方法可以包括：将激光束照射到至少一个第一区域以防止III族氮化物半导体衬底中的蚀刻; 以及使用被激光束照射的第一区域作为掩模，蚀刻除了第一区域之外的至少一个第二区域。

公开(公告)号：US20160149086A1

公开(公告)日：2016-05-26

申请号：US14799675

申请日：2015-07-15

申请人： Jae In SIM ,  Sang Yeob SONG ,  Jong Hoon HA ,  Gi Bum KIM ,  Seung Woo CHOI

发明人： Jae In SIM ,  Sang Yeob SONG ,  Jong Hoon HA ,  Gi Bum KIM ,  Seung Woo CHOI

IPC分类号： H01L33/46 ,  H01L33/50 ,  H01L33/62 ,  H01L33/52 ,  H01L33/38 ,  H01L33/44

CPC分类号： H01L33/46 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/16245

摘要： Provided is a semiconductor light emitting device. The semiconductor light emitting device may include: a light emitting structure comprising a first conductivity-type semiconductor layer having an upper surface divided into first and second regions, an active layer and a second conductivity-type semiconductor layer sequentially disposed on the second region of the first conductivity-type semiconductor layer; a first contact electrode disposed on the first region of the first conductivity-type semiconductor layer; a second contact electrode disposed on the second conductivity-type semiconductor layer; a first electrode pad electrically connected to the first contact electrode and having at least a portion disposed on the second contact electrode; a second electrode pad electrically connected to the second contact electrode; and a multilayer reflective structure interposed between the first electrode pad and the second contact electrode and comprising a plurality of dielectric layers which have different refractive indices and are alternately stacked.

摘要翻译： 提供了一种半导体发光器件。 半导体发光器件可以包括：发光结构，包括具有被划分为第一和第二区域的上表面的第一导电型半导体层，顺序地设置在第二区域的第二区域上的有源层和第二导电类型半导体层 第一导电型半导体层; 设置在所述第一导电型半导体层的所述第一区域上的第一接触电极; 设置在所述第二导电型半导体层上的第二接触电极; 第一电极焊盘，其电连接到所述第一接触电极并且具有设置在所述第二接触电极上的至少一部分; 电连接到第二接触电极的第二电极焊盘; 以及插入在第一电极焊盘和第二接触电极之间的多层反射结构，并且包括具有不同折射率并交替堆叠的多个电介质层。