公开(公告)号：US20120298954A1

公开(公告)日：2012-11-29

申请号：US13480184

申请日：2012-05-24

申请人： Sang Yeon KIM ,  Jong Rak Sohn ,  Gi Bum Kim ,  Su Yeol Lee ,  Yong II Kim

发明人： Sang Yeon KIM ,  Jong Rak Sohn ,  Gi Bum Kim ,  Su Yeol Lee ,  Yong II Kim

IPC分类号： H01L33/06 ,  H01L33/42

CPC分类号： H01L33/42 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44

摘要： There are provided a semiconductor light emitting device and a manufacturing method of the same. The semiconductor light emitting device includes a light emitting structure including first and second conductive semiconductor layers with an active layer interposed therebetween; first and second bonding electrodes connected to the first and second conductive semiconductor layers, respectively; a transparent electrode layer formed on the second conductive semiconductor layer; a plurality of nano structures formed on the transparent electrode layer; and a passivation layer formed to cover the plurality of nano-structures, wherein refractive indexes of the transparent electrode layer, the plurality of nano-structures, and the passivation layer may be sequentially reduced.

摘要翻译： 提供了一种半导体发光器件及其制造方法。 半导体发光器件包括发光结构，该发光结构包括介于其间的有源层的第一和第二导电半导体层; 分别连接到第一和第二导电半导体层的第一和第二接合电极; 形成在所述第二导电半导体层上的透明电极层; 形成在所述透明电极层上的多个纳米结构体; 以及形成为覆盖多个纳米结构的钝化层，其中可以依次减少透明电极层，多个纳米结构和钝化层的折射率。