公开(公告)号：US20120298954A1

公开(公告)日：2012-11-29

申请号：US13480184

申请日：2012-05-24

申请人： Sang Yeon KIM ,  Jong Rak Sohn ,  Gi Bum Kim ,  Su Yeol Lee ,  Yong II Kim

发明人： Sang Yeon KIM ,  Jong Rak Sohn ,  Gi Bum Kim ,  Su Yeol Lee ,  Yong II Kim

IPC分类号： H01L33/06 ,  H01L33/42

CPC分类号： H01L33/42 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44

摘要： There are provided a semiconductor light emitting device and a manufacturing method of the same. The semiconductor light emitting device includes a light emitting structure including first and second conductive semiconductor layers with an active layer interposed therebetween; first and second bonding electrodes connected to the first and second conductive semiconductor layers, respectively; a transparent electrode layer formed on the second conductive semiconductor layer; a plurality of nano structures formed on the transparent electrode layer; and a passivation layer formed to cover the plurality of nano-structures, wherein refractive indexes of the transparent electrode layer, the plurality of nano-structures, and the passivation layer may be sequentially reduced.

摘要翻译： 提供了一种半导体发光器件及其制造方法。 半导体发光器件包括发光结构，该发光结构包括介于其间的有源层的第一和第二导电半导体层; 分别连接到第一和第二导电半导体层的第一和第二接合电极; 形成在所述第二导电半导体层上的透明电极层; 形成在所述透明电极层上的多个纳米结构体; 以及形成为覆盖多个纳米结构的钝化层，其中可以依次减少透明电极层，多个纳米结构和钝化层的折射率。

公开(公告)号：US08884318B2

公开(公告)日：2014-11-11

申请号：US13034279

申请日：2011-02-24

申请人： Su Yeol Lee ,  Yong Tae Kim ,  Jin Bock Lee ,  Gi Bum Kim

发明人： Su Yeol Lee ,  Yong Tae Kim ,  Jin Bock Lee ,  Gi Bum Kim

IPC分类号： H01L33/08 ,  H01L23/00 ,  H01L27/15 ,  H01L33/30 ,  H01L33/62

CPC分类号： H01L27/156 ,  H01L24/24 ,  H01L27/153 ,  H01L33/30 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor light emitting device includes a substrate; a plurality of light emitting cells disposed on the top surface of the substrate, the light emitting cells each having an active layer; a plurality of connection parts formed on the substrate with the light emitting cells formed thereon to connect the light emitting cells in a parallel or series-parallel configuration; and an insulation layer formed on the surface of the light emitting cell to prevent an undesired connection between the connection parts and the light emitting cell. The light emitting cells comprise at least one defective light emitting cell, and at least one of the connection parts related to the defective light emitting cell is disconnected.

摘要翻译： 一种半导体发光器件，包括：衬底; 多个发光单元，设置在所述基板的上表面上，所述发光单元各自具有有源层; 形成在所述基板上的多个连接部分，其上形成有发光单元，以将所述发光单元以并联或串联平行结构连接; 以及形成在发光单元的表面上的绝缘层，以防止连接部分和发光单元之间的不期望的连接。 发光单元包括至少一个有缺陷的发光单元，并且与缺陷发光单元有关的至少一个连接部分断开。

公开(公告)号：US08664020B2

公开(公告)日：2014-03-04

申请号：US12620928

申请日：2009-11-18

申请人： Tae Sung Jang ,  Su Yeol Lee ,  Jong Gun Woo

发明人： Tae Sung Jang ,  Su Yeol Lee ,  Jong Gun Woo

IPC分类号： H01L21/00

CPC分类号： H01L33/20 ,  H01L33/22

摘要： Disclosed is a semiconductor light emitting device, and a method of manufacturing the same. The semiconductor light emitting device includes a first conductivity type semiconductor layer, an active layer disposed on the top of the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the top of the active layer and comprising light extraction patterns in the top thereof, the light extraction patterns each having a columnar portion and a hemispherical top portion.

摘要翻译： 公开了一种半导体发光器件及其制造方法。 半导体发光器件包括第一导电类型半导体层，设置在第一导电类型半导体层的顶部上的有源层和设置在有源层的顶部上的第二导电类型半导体层，并且包括在第 其顶部具有各自具有柱状部分和半球形顶部部分的光提取图案。

公开(公告)号：US08124997B2

公开(公告)日：2012-02-28

申请号：US12756528

申请日：2010-04-08

申请人： Tae Jun Kim ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

发明人： Tae Jun Kim ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

IPC分类号： H01L31/0232

CPC分类号： H01L33/0079 ,  H01L33/22 ,  H01L33/32

摘要： There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

摘要翻译： 提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构 在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

公开(公告)号：US20100133570A1

公开(公告)日：2010-06-03

申请号：US12620928

申请日：2009-11-18

申请人： Tae Sung JANG ,  Su Yeol Lee ,  Jong Gun Woo

发明人： Tae Sung JANG ,  Su Yeol Lee ,  Jong Gun Woo

IPC分类号： H01L33/00 ,  H01L21/30

CPC分类号： H01L33/20 ,  H01L33/22

摘要： Disclosed is a semiconductor light emitting device, and a method of manufacturing the same. The semiconductor light emitting device includes a first conductivity type semiconductor layer, an active layer disposed on the top of the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the top of the active layer and comprising light extraction patterns in the top thereof, the light extraction patterns each having a columnar portion and a hemispherical top portion.

摘要翻译： 公开了一种半导体发光器件及其制造方法。 半导体发光器件包括第一导电类型半导体层，设置在第一导电类型半导体层的顶部上的有源层和设置在有源层的顶部上的第二导电类型半导体层，并且包括在第 其顶部具有各自具有柱状部分和半球形顶部部分的光提取图案。

公开(公告)号：US07479661B2

公开(公告)日：2009-01-20

申请号：US11435751

申请日：2006-05-18

申请人： Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

发明人： Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/32

摘要： The invention provides a nitride semiconductor device and a manufacturing method thereof. In the invention, n-type and p-type nitride semiconductor layers are formed on a substrate, and an active layer is formed therebetween. The n-type nitride semiconductor layers include first and second n-type GaN layers disposed in the order of distance from the active layer. In addition, in the nitride semiconductor device of the invention, an AlxGal-xN layer, where 0

摘要翻译： 本发明提供一种氮化物半导体器件及其制造方法。 在本发明中，在衬底上形成n型和p型氮化物半导体层，并且在它们之间形成有源层。 n型氮化物半导体层包括以距离有源层的距离的顺序设置的第一和第二n型GaN层。 此外，在本发明的氮化物半导体器件中，在第一和第二n型GaN层之间插入有0

公开(公告)号：US07372078B2

公开(公告)日：2008-05-13

申请号：US11581003

申请日：2006-10-16

申请人： Tae Sung Jang ,  Su Yeol Lee ,  Seok Beom Choi

发明人： Tae Sung Jang ,  Su Yeol Lee ,  Seok Beom Choi

IPC分类号： H01L33/00

CPC分类号： H01L33/46 ,  H01L33/0079 ,  H01L33/385

摘要： A vertical GaN-based LED includes: an n-electrode; a light-emitting structure in which an n-type GaN layer, an active layer, and a p-type GaN layer are sequentially formed under the n-electrode; a p-electrode formed under the light-emitting structure; a passivation layer formed to cover the side and bottom surfaces of the light-emitting structure and expose a predetermined portion of the p-electrode, the passivation layer being formed of a distributed Bragg reflector (DBR); a plating seed layer formed under the passivation layer and the p-electrode; and a support layer formed under the plating seed layer.

摘要翻译： 垂直GaN基LED包括：n电极; 在n电极下依次形成n型GaN层，有源层和p型GaN层的发光结构; 形成在发光结构下的p电极; 钝化层，其形成为覆盖所述发光结构的侧表面和底表面并暴露所述p电极的预定部分，所述钝化层由分布式布拉格反射器（DBR）形成; 形成在钝化层下面的电镀种子层和p电极; 以及形成在电镀种子层下的支撑层。

公开(公告)号：US20140231859A1

公开(公告)日：2014-08-21

申请号：US14236582

申请日：2011-08-01

申请人： Jae Yoon Kim ,  Seok Min Hwang ,  Su Yeol Lee ,  Seung Wan Chae ,  Jae Ho Han ,  Jin Bock Lee

发明人： Jae Yoon Kim ,  Seok Min Hwang ,  Su Yeol Lee ,  Seung Wan Chae ,  Jae Ho Han ,  Jin Bock Lee

IPC分类号： H01L33/38 ,  H01L33/62 ,  H01L33/32

CPC分类号： H01L33/387 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： A semiconductor light emitting device may include: a light emitting structure including an n-type semiconductor layer, a p-type semiconductor layer, and an active layer interposed therebetween; a first electrode connected to one of the n-type semiconductor layer and the p-type semiconductor layer; and a second electrode connected to the other of the n-type semiconductor layer and the p-type semiconductor layer. The first electrode may include a first electrode pad disposed in a central portion of one side of the light emitting structure and first to third branch electrodes connected to the first electrode pad, having a fork shape. The second electrode may include second and third electrode pads disposed separately in both corners of the other side opposing the one side and fourth to seventh branch electrodes connected thereto. The fourth and seventh branch electrodes may extend in an interdigitated manner between the first to third branch electrodes.

摘要翻译： 半导体发光器件可以包括：包含n型半导体层，p型半导体层和插入其间的有源层的发光结构; 连接到所述n型半导体层和所述p型半导体层之一的第一电极; 以及与n型半导体层和p型半导体层中的另一方连接的第二电极。 第一电极可以包括设置在发光结构的一侧的中心部分中的第一电极焊盘和连接到具有叉形状的第一电极焊盘的第一至第三分支电极。 第二电极可以包括分别位于与一侧相对的另一侧的两个角部和与其连接的第四至第七分支电极的第二和第三电极焊盘。 第四和第七分支电极可以在第一至第三分支电极之间以叉指方式延伸。

公开(公告)号：US20120286309A1

公开(公告)日：2012-11-15

申请号：US13279782

申请日：2011-10-24

申请人： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Sung Tae Kim ,  Jong Ho Lee

发明人： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Sung Tae Kim ,  Jong Ho Lee

IPC分类号： H01L33/46

CPC分类号： H01L33/46 ,  H01L33/20

摘要： A semiconductor light emitting device includes: a light emitting diode unit including a light-transmissive substrate having a face sloped upwardly at a lower edge thereof. A rear reflective lamination body is formed on the lower face and the surrounding sloped face of the light-transmissive substrate. The rear reflective lamination body includes an optical auxiliary layer and a metal reflective film formed on a lower face of the optical auxiliary layer. A junction lamination body is provided to a lower face of the rear reflective lamination body. The junction lamination body including a junction metal layer made of a eutectic metal material and a diffusion barrier film.

摘要翻译： 一种半导体发光器件包括：发光二极管单元，其包括具有在其下边缘向上倾斜的面的透光基板。 背光层叠体形成在透光性基板的下表面和周边的倾斜面上。 后反光层叠体包括光辅助层和形成在光辅助层的下表面上的金属反射膜。 在后反光层叠体的下表面设置有结层叠体。 结合层叠体包括由共晶金属材料制成的结金属层和扩散阻挡膜。

公开(公告)号：US08168454B2

公开(公告)日：2012-05-01

申请号：US12466086

申请日：2009-05-14

申请人： Su Yeol Lee ,  Sang Ho Yoon ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

发明人： Su Yeol Lee ,  Sang Ho Yoon ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC分类号： H01L21/00

CPC分类号： H01L33/32 ,  H01L33/14 ,  H01L33/40

摘要： Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.

摘要翻译： 提供包括n电极的垂直LED; 形成在n电极下面的n型GaN层，n型GaN层具有与n电极接触的表面，该表面具有比N大的Ga的Ga + N层; 形成在n型GaN层下面的有源层; 形成在有源层下面的p型GaN层; 形成在p型GaN层下面的p电极; 以及在p电极下面形成的结构支撑层。