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公开(公告)号:US08586462B2
公开(公告)日:2013-11-19
申请号:US13307069
申请日:2011-11-30
申请人: Hokyun Ahn , Jong-Won Lim , Hyung Sup Yoon , Byoung-Gue Min , Sang-Heung Lee , Hae Cheon Kim , Eun Soo Nam
发明人: Hokyun Ahn , Jong-Won Lim , Hyung Sup Yoon , Byoung-Gue Min , Sang-Heung Lee , Hae Cheon Kim , Eun Soo Nam
IPC分类号: H01L29/808 , H01L21/283
CPC分类号: H01L29/7831 , H01L29/2003 , H01L29/404 , H01L29/42316 , H01L29/66462 , H01L29/66863 , H01L29/7787 , H01L29/812
摘要: Disclosed are a method of manufacturing a field-effect transistor. The disclosed method includes: providing a semiconductor substrate; forming a source ohmic metal layer on one side of the semiconductor substrate; forming a drain ohmic metal layer on another side of the semiconductor substrate; forming a gate electrode between the source ohmic metal layer and the drain ohmic metal layer, on an upper portion of the semiconductor substrate; forming an insulating film on the semiconductor substrate's upper portion including the source ohmic metal layer, the drain ohmic metal layer and the gate electrode; and forming a plurality of field electrodes on an upper portion of the insulating film, wherein the insulating film below the respective field electrodes has different thicknesses.
摘要翻译: 公开了一种制造场效晶体管的方法。 所公开的方法包括:提供半导体衬底; 在半导体衬底的一侧上形成源极欧姆金属层; 在所述半导体衬底的另一侧上形成漏极欧姆金属层; 在所述源欧姆金属层和所述漏极欧姆金属层之间形成栅电极,在所述半导体衬底的上部; 在包括源欧姆金属层,漏极欧姆金属层和栅电极的半导体衬底的上部上形成绝缘膜; 以及在绝缘膜的上部形成多个场电极,其中各个场电极下方的绝缘膜具有不同的厚度。
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公开(公告)号:US08304859B2
公开(公告)日:2012-11-06
申请号:US12847174
申请日:2010-07-30
申请人: Sang-Heung Lee , Hae Cheon Kim , Eun Soo Nam
发明人: Sang-Heung Lee , Hae Cheon Kim , Eun Soo Nam
CPC分类号: H01L25/167 , G02B6/124 , H01L2224/48091 , H01L2224/48137 , H01L2924/1305 , H01L2924/00014 , H01L2924/00
摘要: Provided is an optical interconnection device. The optical interconnection device include: a first semiconductor chip disposed on a germanium-on-insulator (GOI) substrate; a light emitter on the GOI substrate, the light emitter receiving an electrical signal from the first semiconductor chip and outputting a light signal; a light detector on the GOI substrate, the light detector sensing the light signal and converting the sensed light signal into an electrical signal; and a second semiconductor chip on the GOI substrate, the second semiconductor chip receiving the electrical signal from the light detector.
摘要翻译: 提供了一种光互连装置。 光学互连装置包括:布置在绝缘体上(锗)绝缘体(GOI)基板上的第一半导体芯片; 在GOI基板上的光发射器,光发射器接收来自第一半导体芯片的电信号并输出光信号; 在GOI基板上的光检测器,光检测器感测光信号并将感测到的光信号转换成电信号; 以及在GOI基板上的第二半导体芯片,第二半导体芯片从光检测器接收电信号。
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公开(公告)号:US08058658B2
公开(公告)日:2011-11-15
申请号:US12421130
申请日:2009-04-09
申请人: Sang-Heung Lee , Hae Cheon Kim , Dong Min Kang , Dong-Young Kim , Jae Kyoung Mun , Hokyun Ahn , Jong-Won Lim , Woo Jin Chang , Hong Gu Ji , Eun Soo Nam
发明人: Sang-Heung Lee , Hae Cheon Kim , Dong Min Kang , Dong-Young Kim , Jae Kyoung Mun , Hokyun Ahn , Jong-Won Lim , Woo Jin Chang , Hong Gu Ji , Eun Soo Nam
IPC分类号: H01L27/15
CPC分类号: H01L25/167 , H01L2224/0603 , H01L2224/45014 , H01L2224/48137 , H01L2224/4903 , H01L2224/73265 , H01L2924/1305 , H01L2924/30107 , H01L2924/00
摘要: Provided is a high-speed optical interconnection device. The high-speed optical interconnection device includes a first semiconductor chip, light emitters, optical detectors, and a second semiconductor chip, which are disposed on a silicon-on-insulator (SOI) substrate. The light emitters receive electrical signals from the first semiconductor chip to output optical signals. The optical detectors detect the optical signals to convert the optical signals into electrical signals. The second semiconductor chip receives the electrical signals converted by the optical detectors.
摘要翻译: 提供了一种高速光互连装置。 高速光互连装置包括设置在绝缘体上硅(SOI))衬底上的第一半导体芯片,发光体,光检测器和第二半导体芯片。 光发射器接收来自第一半导体芯片的电信号以输出光信号。 光检测器检测光信号,将光信号转换为电信号。 第二半导体芯片接收由光学检测器转换的电信号。
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公开(公告)号:US20100133551A1
公开(公告)日:2010-06-03
申请号:US12421130
申请日:2009-04-09
申请人: Sang-Heung Lee , Hae Cheon Kim , Dong Min Kang , Dong-Young Kim , Jae-Kyoung Mun , Hokyun Ahn , Jong-Won Lim , Woo Jin Chang , Hong Gu Ji , Eun Soo Nam
发明人: Sang-Heung Lee , Hae Cheon Kim , Dong Min Kang , Dong-Young Kim , Jae-Kyoung Mun , Hokyun Ahn , Jong-Won Lim , Woo Jin Chang , Hong Gu Ji , Eun Soo Nam
IPC分类号: H01L31/147 , H01L33/00
CPC分类号: H01L25/167 , H01L2224/0603 , H01L2224/45014 , H01L2224/48137 , H01L2224/4903 , H01L2224/73265 , H01L2924/1305 , H01L2924/30107 , H01L2924/00
摘要: Provided is a high-speed optical interconnection device. The high-speed optical interconnection device includes a first semiconductor chip, light emitters, optical detectors, and a second semiconductor chip, which are disposed on a silicon-on-insulator (SOI) substrate. The light emitters receive electrical signals from the first semiconductor chip to output optical signals. The optical detectors detect the optical signals to convert the optical signals into electrical signals. The second semiconductor chip receives the electrical signals converted by the optical detectors.
摘要翻译: 提供了一种高速光互连装置。 高速光互连装置包括设置在绝缘体上硅(SOI))衬底上的第一半导体芯片,发光体,光检测器和第二半导体芯片。 光发射器接收来自第一半导体芯片的电信号以输出光信号。 光检测器检测光信号,将光信号转换为电信号。 第二半导体芯片接收由光学检测器转换的电信号。
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公开(公告)号:US20120105158A1
公开(公告)日:2012-05-03
申请号:US13185913
申请日:2011-07-19
申请人: Sang-Heung LEE , Hae Cheon Kim , Eun Soo Nam
发明人: Sang-Heung LEE , Hae Cheon Kim , Eun Soo Nam
IPC分类号: H03F3/04
CPC分类号: H03F3/08 , H03F1/34 , H03F3/3432 , H03F2200/121 , H03F2200/141 , H03F2200/18
摘要: Provided is a feedback amplifier including: an amplification circuit unit to generate an output voltage by amplifying an input voltage inputted through an input terminal; an output circuit unit to output the generated output voltage through an output terminal; a feedback circuit unit to control the gain of the amplification circuit unit by determining a total feedback resistance value using an external control signal and controlling an input current while the total feedback resistance value is determined; and a bias circuit unit to apply a bias voltage to the feedback circuit unit.
摘要翻译: 提供一种反馈放大器,包括:放大电路单元,通过放大通过输入端子输入的输入电压来产生输出电压; 输出电路单元,用于通过输出端子输出产生的输出电压; 反馈电路单元,其通过使用外部控制信号确定总反馈电阻值来控制放大电路单元的增益,并且在确定总反馈电阻值的同时控制输入电流; 以及偏置电路单元,用于向反馈电路单元施加偏置电压。
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公开(公告)号:US20110037078A1
公开(公告)日:2011-02-17
申请号:US12847174
申请日:2010-07-30
申请人: Sang-Heung Lee , Hae Cheon Kim , Eun Soo Nam
发明人: Sang-Heung Lee , Hae Cheon Kim , Eun Soo Nam
IPC分类号: H01L31/12
CPC分类号: H01L25/167 , G02B6/124 , H01L2224/48091 , H01L2224/48137 , H01L2924/1305 , H01L2924/00014 , H01L2924/00
摘要: Provided is an optical interconnection device. The optical interconnection device include: a first semiconductor chip disposed on a germanium-on-insulator (GOI) substrate; a light emitter on the GOI substrate, the light emitter receiving an electrical signal from the first semiconductor chip and outputting a light signal; a light detector on the GOI substrate, the light detector sensing the light signal and converting the sensed light signal into an electrical signal; and a second semiconductor chip on the GOI substrate, the second semiconductor chip receiving the electrical signal from the light detector.
摘要翻译: 提供了一种光互连装置。 光学互连装置包括:布置在绝缘体上(锗)绝缘体(GOI)基板上的第一半导体芯片; 在GOI基板上的光发射器,光发射器接收来自第一半导体芯片的电信号并输出光信号; 在GOI基板上的光检测器,光检测器感测光信号并将感测到的光信号转换成电信号; 以及在GOI基板上的第二半导体芯片,第二半导体芯片从光检测器接收电信号。
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公开(公告)号:US08421538B2
公开(公告)日:2013-04-16
申请号:US13185913
申请日:2011-07-19
申请人: Sang-Heung Lee , Hae Cheon Kim , Eun Soo Nam
发明人: Sang-Heung Lee , Hae Cheon Kim , Eun Soo Nam
IPC分类号: H03F3/04
CPC分类号: H03F3/08 , H03F1/34 , H03F3/3432 , H03F2200/121 , H03F2200/141 , H03F2200/18
摘要: Provided is a feedback amplifier including: an amplification circuit unit to generate an output voltage by amplifying an input voltage inputted through an input terminal; an output circuit unit to output the generated output voltage through an output terminal; a feedback circuit unit to control the gain of the amplification circuit unit by determining a total feedback resistance value using an external control signal and controlling an input current while the total feedback resistance value is determined; and a bias circuit unit to apply a bias voltage to the feedback circuit unit.
摘要翻译: 提供一种反馈放大器,包括:放大电路单元,通过放大通过输入端子输入的输入电压来产生输出电压; 输出电路单元,用于通过输出端子输出产生的输出电压; 反馈电路单元,其通过使用外部控制信号确定总反馈电阻值来控制放大电路单元的增益,并且在确定总反馈电阻值的同时控制输入电流; 以及偏置电路单元,用于向反馈电路单元施加偏置电压。
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公开(公告)号:US20120153361A1
公开(公告)日:2012-06-21
申请号:US13307069
申请日:2011-11-30
申请人: Hokyun Ahn , Jong-Won Lim , Hyung Sup Yoon , Byoung-Gue Min , Sang-Heung Lee , Hae Cheon Kim , Eun Soo Nam
发明人: Hokyun Ahn , Jong-Won Lim , Hyung Sup Yoon , Byoung-Gue Min , Sang-Heung Lee , Hae Cheon Kim , Eun Soo Nam
IPC分类号: H01L21/283 , H01L29/808
CPC分类号: H01L29/7831 , H01L29/2003 , H01L29/404 , H01L29/42316 , H01L29/66462 , H01L29/66863 , H01L29/7787 , H01L29/812
摘要: Disclosed are a field-effect transistor and a manufacturing method thereof. The disclosed field-effect transistor includes: a semiconductor substrate; a source ohmic metal layer formed on one side of the semiconductor substrate; a drain ohmic metal layer formed on another side of the semiconductor substrate; a gate electrode formed between the source ohmic metal layer and the drain ohmic metal layer, on an upper portion of the semiconductor substrate; an insulating film formed on the semiconductor substrate's upper portion including the source ohmic metal layer, the drain ohmic metal layer and the gate electrode; and a plurality of field electrodes formed on an upper portion of the insulating film, wherein the insulating film below the respective field electrodes has different thicknesses.
摘要翻译: 公开了场效应晶体管及其制造方法。 所公开的场效应晶体管包括:半导体衬底; 源极欧姆金属层,形成在半导体衬底的一侧上; 形成在所述半导体衬底的另一侧上的漏极欧姆金属层; 在所述源极欧姆金属层和所述漏极欧姆金属层之间形成的栅电极,位于所述半导体衬底的上部; 形成在包括源极欧姆金属层,漏极欧姆金属层和栅电极的半导体衬底的上部上的绝缘膜; 以及形成在绝缘膜的上部的多个场电极,其中,各个场电极下方的绝缘膜具有不同的厚度。
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公开(公告)号:US20110133843A1
公开(公告)日:2011-06-09
申请号:US12960153
申请日:2010-12-03
申请人: Seong-Il KIM , Jongmin Lee , Byoung-Gue Min , Hyung Sup Yoon , Hae Cheon Kim , Eun Soo Nam
发明人: Seong-Il KIM , Jongmin Lee , Byoung-Gue Min , Hyung Sup Yoon , Hae Cheon Kim , Eun Soo Nam
IPC分类号: H03F3/68
CPC分类号: H03F3/245 , H03F1/0261 , H03F1/52 , H03F3/19 , H03F3/211 , H03F2200/18 , H03F2200/451
摘要: Provided is a power amplifier device. The power amplifier device includes: a cutoff unit cutting off a direct current (DC) component of a signal delivered from a signal input terminal; a circuit protecting unit connected to the cutoff unit and stabilizing a signal delivered from the cutoff unit; and an amplification unit connected to the circuit protecting unit and amplifying a signal delivered from the circuit protecting unit, wherein the amplification unit comprises a plurality of transistors connected in parallel to the circuit protecting unit and the circuit protecting unit comprises resistors connected to between bases of the plurality of transistors.
摘要翻译: 提供了一种功率放大器装置。 功率放大器装置包括:切断单元,切断从信号输入端子发送的信号的直流(DC)分量; 连接到所述切断单元的电路保护单元,并且稳定从所述切断单元传送的信号; 以及放大单元,连接到所述电路保护单元并放大从所述电路保护单元传递的信号,其中所述放大单元包括与所述电路保护单元并联连接的多个晶体管,所述电路保护单元包括电阻器, 多个晶体管。
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公开(公告)号:US20110049698A1
公开(公告)日:2011-03-03
申请号:US12764330
申请日:2010-04-21
申请人: Woojin CHANG , Soon II Yeo , Hae Cheon Kim , Eun Soo Nam
发明人: Woojin CHANG , Soon II Yeo , Hae Cheon Kim , Eun Soo Nam
IPC分类号: H01L23/538 , H01L23/02 , H01L21/50
CPC分类号: H01L23/5389 , H01L23/3107 , H01L24/83 , H01L24/90 , H01L25/03 , H01L2224/90 , H01L2924/00011 , H01L2924/01079 , H01L2924/09701 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/1517 , H01L2224/83851 , H01L2924/00
摘要: A semiconductor package is provided. The semiconductor package includes a package body, a plurality of semiconductor chips, and an external connection terminal. The package body is stacked with a plurality of sheets where conductive patterns and vias are disposed. The plurality of semiconductor chips are inserted into insert slots extending from one surface of the package body. The external connection terminal is provided on other surface opposite to the one surface of the package body. Here, the plurality of semiconductor chips are electrically connected to the external connection terminal.
摘要翻译: 提供半导体封装。 半导体封装包括封装体,多个半导体芯片和外部连接端子。 封装体与设置有导电图案和通孔的多个片层叠。 多个半导体芯片被插入到从封装主体的一个表面延伸的插入槽中。 外部连接端子设置在与封装主体的一个表面相对的另一表面上。 这里,多个半导体芯片电连接到外部连接端子。
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