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    Power amplifier having depletion mode high electron mobility transistor
    3.
    发明授权
    Power amplifier having depletion mode high electron mobility transistor 有权
    具有耗尽型高电子迁移率晶体管的功率放大器

    公开(公告)号：US08294521B2

    公开(公告)日：2012-10-23

    申请号：US12855055

    申请日：2010-08-12

    申请人： Dong Min Kang ,  Hong Gu Ji ,  Hokyun Ahn ,  Jong-Won Lim ,  Woojin Chang ,  Sang-Heung Lee ,  Dong-Young Kim ,  Hae Cheon Kim

    发明人： Dong Min Kang ,  Hong Gu Ji ,  Hokyun Ahn ,  Jong-Won Lim ,  Woojin Chang ,  Sang-Heung Lee ,  Dong-Young Kim ,  Hae Cheon Kim

    IPC分类号： H03F3/04

    CPC分类号： H03F3/24 ,  H03F1/565 ,  H03F3/195 ,  H03F2200/222

    摘要： Provided is a power amplifier including: a depletion mode high electron mobility transistor (D-mode HEMT) configured to amplify a signal inputted to a gate terminal and output the amplified signal through a drain terminal; an input matching circuit configured to serially ground the gate terminal; and a DC bias circuit connected between the drain terminal and a ground. Through the foregoing configuration, the HEMT may be biased only by a single DC bias circuit without any biasing means to provide a negative voltage. Also, superior matching characteristic may be provided in various operation frequency bands through a shunt inductor and a choke inductor.

    摘要翻译： 提供了一种功率放大器，包括：耗尽型高电子迁移率晶体管（D模式HEMT），被配置为放大输入到栅极端子的信号，并通过漏极端子输出放大的信号; 输入匹配电路，被配置为使所述栅极端子串联接地; 以及连接在漏极端子和地之间的DC偏置电路。 通过上述配置，HEMT可以仅由单个DC偏置电路偏压而没有任何偏置装置来提供负电压。 此外，可以通过并联电感器和扼流电感器在各种工作频带中提供优异的匹配特性。

    Patch antenna with wide bandwidth at millimeter wave band
    4.
    发明授权
    Patch antenna with wide bandwidth at millimeter wave band 有权
    毫米波段带宽宽的补片天线

    公开(公告)号：US08319689B2

    公开(公告)日：2012-11-27

    申请号：US12633466

    申请日：2009-12-08

    申请人： Dong-Young Kim ,  Hae Cheon Kim

    发明人： Dong-Young Kim ,  Hae Cheon Kim

    IPC分类号： H01Q1/38

    CPC分类号： H01Q9/0442 ,  H01Q1/48 ,  H01Q9/0407

    摘要： Provided is a millimeter wave band patch antenna. The patch antenna includes a multi-layer substrate, at least one metal pattern layer, an antenna patch, a ground layer, and a plurality of vias. In the multi-layer substrate, a plurality of dielectric layers are stacked. The metal pattern layer is disposed between the dielectric layers except for a center region of the multi-layer substrate. The antenna patch is disposed on an upper surface of the multi-layer substrate in the center region. The ground layer is disposed on a lower surface of the multi-layer substrate opposing to the upper surface. The vias is disposed around the center region through the dielectric layers for electrically connecting the metal pattern layer to the ground layer. The center region, which is surrounded by the ground layer and the vias, functions as a resonator.

    摘要翻译： 提供了一种毫米波带贴片天线。 贴片天线包括多层衬底，至少一个金属图案层，天线贴片，接地层和多个通孔。 在多层基板中堆叠多个电介质层。 金属图案层设置在除了多层基板的中心区域之外的介电层之间。 天线贴片在中心区域设置在多层基板的上表面上。 接地层设置在与上表面相对的多层基板的下表面上。 通孔通过电介质层设置在中心区域周围，用于将金属图案层电连接到接地层。 由接地层和通孔包围的中心区域用作谐振器。

    Liquid crystal display device and fabrication method thereof
    6.
    发明申请
    Liquid crystal display device and fabrication method thereof 有权
    液晶显示装置及其制造方法

    公开(公告)号：US20080151136A1

    公开(公告)日：2008-06-26

    申请号：US11819122

    申请日：2007-06-25

    申请人： Ji-Hyun Jung ,  Dong-Young Kim

    发明人： Ji-Hyun Jung ,  Dong-Young Kim

    IPC分类号： G02F1/136 ,  G02F1/1343 ,  H01L21/768

    CPC分类号： G02F1/136286 ,  G02F1/13458 ,  G02F2001/136231 ,  G02F2001/136236 ,  G02F2001/13625

    摘要： A method for fabricating a display includes providing a first substrate divided into a pixel part and first and second pad parts, forming a gate electrode and a gate line in the pixel part of the first substrate and forming a gate pad line in the first pad part of the first substrate, forming a first insulation film and a semiconductor film over the gate electrode, the gate line and the gate pad line, forming an active pattern over the gate electrode from the semiconductor film with the first insulation film interposed therebetween and forming a contact hole exposing a portion of the gate pad line using a single mask, forming source and drain electrodes in the pixel part, forming a pixel electrode in the pixel part, forming a gate pad electrode electrically connected with the gate pad line via the contact hole, forming a second insulation film over the pixel electrode and the gate pad electrode, exposing a portion of the pixel electrode and at least one portion of the gate pad electrode, and attaching the first substrate and a second substrate.

    摘要翻译： 一种制造显示器的方法包括：提供分为像素部分和第一和第二焊盘部分的第一衬底，在第一衬底的像素部分中形成栅电极和栅极线，并在第一焊盘部分中形成栅极焊盘线 在所述栅电极，所述栅极线和所述栅极焊盘线上形成第一绝缘膜和半导体膜，从所述半导体膜在所述栅电极上形成有源图案，并且在所述第一绝缘膜和半导体膜之间形成第一绝缘膜， 接触孔使用单个掩模暴露栅极焊盘线的一部分，在像素部分中形成源电极和漏电极，在像素部分中形成像素电极，形成通过接触孔与栅极焊盘线电连接的栅极焊盘电极 在所述像素电极和所述栅极焊盘电极之上形成第二绝缘膜，暴露所述像素电极的一部分和所述栅极焊盘的至少一部分 e，并且附接第一基板和第二基板。

    Liquid crystal display device and method of fabricating the same
    7.
    发明申请
    Liquid crystal display device and method of fabricating the same 有权
    液晶显示装置及其制造方法

    公开(公告)号：US20080002125A1

    公开(公告)日：2008-01-03

    申请号：US11643115

    申请日：2006-12-20

    申请人： Dong-Young Kim

    发明人： Dong-Young Kim

    IPC分类号： G02F1/1343

    CPC分类号： H01L29/66765 ,  G02F1/136209 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/136236 ,  G02F2001/136295 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1288

    摘要： A liquid crystal display device includes a gate line and a gate electrode connected to the gate line, on a substrate; a gate insulating layer on the gate electrode and the gate line; an active layer on the gate insulating layer over the gate electrode; an ohmic contact layer on the active layer; first source and drain electrodes on the ohmic contact layer; second source and drain electrodes connected to the first source and drain electrodes, respectively; a data line extending from the source electrode and crossing the gate line to define a pixel region; and a pixel electrode in the pixel region and extending from the second drain electrode.

    摘要翻译： 液晶显示装置包括在基板上的与栅极线连接的栅极线和栅电极; 栅极电极和栅极线上的栅极绝缘层; 位于栅电极上的栅极绝缘层上的有源层; 有源层上的欧姆接触层; 欧姆接触层上的第一源极和漏极; 分别连接到第一源极和漏极的第二源极和漏极; 从源电极延伸并与栅极线交叉以限定像素区域的数据线; 以及像素区域中的像素电极并且从第二漏电极延伸。

    YIG magnetic ceramic composition for microwave application and preparation method thereof
    9.
    发明授权
    YIG magnetic ceramic composition for microwave application and preparation method thereof 有权
    用于微波应用的YIG磁性陶瓷组合物及其制备方法

    公开(公告)号：US06899819B2

    公开(公告)日：2005-05-31

    申请号：US10716768

    申请日：2003-11-18

    申请人： Dong-Young Kim ,  Jin Woo Hahn ,  Dong Suk Jun ,  Sang Seok Lee

    发明人： Dong-Young Kim ,  Jin Woo Hahn ,  Dong Suk Jun ,  Sang Seok Lee

    IPC分类号： C04B35/26 ,  H01F1/01 ,  H01F1/34 ,  C04B35/40 ,  H01F1/10

    CPC分类号： H01F1/346

    摘要： The present research provides a high-density magnetic ceramic composition for microwave application and a preparation method thereof. The magnetic ceramic composition of this research includes Yttrium iron garnet (YIG, Y3Fe5O12) as its basic element and a little amount of additional element, silicon oxide (SiO2), which is expressed as: Y3Fe5O12+x SiO2 (0.05≦x≦5 mol %). The magnetic ceramic composition is prepared by measuring proper amounts of ferric oxide (Fe2O3), yttrium oxide (Y2O3) and SiO2, mixing them, calcining the mixture, and molding and sintering them. Since the magnetic ceramic composition of the present research has very little magnetic loss, it can be used in components for communication in a microwave band, usefully.

    摘要翻译： 本研究提供了用于微波应用的高密度磁性陶瓷组合物及其制备方法。 该研究的磁性陶瓷组合物包括钇铁石榴石（YIG，Y 3 N 5 O 12 O 12）作为其基本元素，少量 的附加元素，氧化硅（SiO 2/2），其表示为：Y 3 Fe 5 O 12 + x SiO 2（0.05≤x≤5mol％）。 磁性陶瓷组合物通过测量适量的氧化铁（Fe 2 O 3 O 3），氧化钇（Y 2 O 3 O 3） 3＆gt;）和SiO 2，混合它们，煅烧混合物，并将其模塑和烧结。 由于本研究的磁性陶瓷组合物具有非常小的磁损耗，因此可用于微波带通信的部件中。

    Electron gun for cathode ray tube
    10.
    发明申请
    Electron gun for cathode ray tube 失效
    阴极射线管用电子枪

    公开(公告)号：US20050073236A1

    公开(公告)日：2005-04-07

    申请号：US10640654

    申请日：2003-08-14

    申请人： Dong-Young Kim

    发明人： Dong-Young Kim

    IPC分类号： H01J29/48 ,  H01J29/50

    CPC分类号： H01J29/503

    摘要： An electron gun for a cathode ray tube comprises a triode including a cathode, a control electrode and an accelerating electrode, a pre-focusing electrode unit adjacent to the triode, a main lens unit including a focusing electrode and an anode for forming a main lens for focusing the electron beam toward a screen, a first focusing electrode unit having vertically-elongated electron beam passing holes and horizontally-elongated electron beam passing holes for forming a quadrupole lens, a second focusing electrode unit having vertically-elongated electron beam passing holes and horizontally-elongated electron beam passing holes for forming a quadrupole lens, and an auxiliary electrode disposed between the first focusing electrode unit and the second focusing electrode unit, to which a dynamic voltage is applied, and including vertically-elongated electron beam passing holes on electron beam incoming side thereof and horizontally-elongated electron beam passing holes on electron beam outgoing side thereof.

    摘要翻译： 一种用于阴极射线管的电子枪包括一个三极管，它包括一个阴极，一个控制电极和一个加速电极，一个与三极管相邻的预聚焦电极单元，一个主透镜单元，包括一个聚焦电极和一个形成主透镜的阳极 用于将电子束聚焦到屏幕，具有垂直伸长的电子束通过孔和用于形成四极透镜的水平伸长的电子束通过孔的第一聚焦电极单元，具有垂直伸长的电子束通过孔的第二聚焦电极单元和 用于形成四极透镜的水平伸长的电子束通过孔和设置在第一聚焦电极单元和第二聚焦电极单元之间的辅助电极，施加动态电压，并且在电子上包括垂直伸长的电子束通过孔 电子束的入射侧和水平伸长的电子束通过电子束的孔 它的一边。