摘要:
A semiconductor memory device includes a plurality of memory cell array blocks, a bit line sense amplifier, a local sense amplifier that can be controlled to be turned on or off, a data sense amplifier, and a controller. The controller activates a local sense control signal for a predetermined duration in response to first and second signals. The first signal is a bit line sense enable signal that activates the bit line sense amplifier, and the local sense amplifier is activated for a predetermined duration after the bit line sense enable signal is activated. The second signal is activated or deactivated in phase with a column selection line signal that connects a pair of bit lines and a pair of local input/output lines. Accordingly, it is possible to turn on or off the local sense amplifier according to operating conditions, thereby increasing a tRCD parameter and reducing the consumption of current. The operating speed of the semiconductor memory device can be improved by combining the local sense amplifier with a current type data sense amplifier that does not require precharging and equalization during a read operation.
摘要:
A semiconductor memory device includes a plurality of memory cell array blocks, a bit line sense amplifier, a local sense amplifier that can be controlled to be turned on or off, a data sense amplifier, and a controller. The controller activates a local sense control signal for a predetermined duration in response to first and second signals. The first signal is a bit line sense enable signal that activates the bit line sense amplifier, and the local sense amplifier is activated for a predetermined duration after the bit line sense enable signal is activated. The second signal is activated or deactivated in phase with a column selection line signal that connects a pair of bit lines and a pair of local input/output lines. Accordingly, it is possible to turn on or off the local sense amplifier according to operating conditions, thereby increasing a tRCD parameter and reducing the consumption of current. The operating speed of the semiconductor memory device can be improved by combining the local sense amplifier with a current type data sense amplifier that does not require precharging and equalization during a read operation.
摘要:
A semiconductor memory device includes a plurality of memory cell array blocks, a bit line sense amplifier, a local sense amplifier that can be controlled to be turned on or off, a data sense amplifier, and a controller. The controller activates a local sense control signal for a predetermined duration in response to first and second signals. The first signal is a bit line sense enable signal that activates the bit line sense amplifier, and the local sense amplifier is activated for a predetermined duration after the bit line sense enable signal is activated. The second signal is activated or deactivated in phase with a column selection line signal that connects a pair of bit lines and a pair of local input/output lines. Accordingly, it is possible to turn on or off the local sense amplifier according to operating conditions, thereby increasing a tRCD parameter and reducing the consumption of current. The operating speed of the semiconductor memory device can be improved by combining the local sense amplifier with a current type data sense amplifier that does not require precharging and equalization during a read operation.
摘要:
A semiconductor memory device includes a plurality of banks. A data path may be divided into a read data path and a write data path, therefore, parallel processing of write and read commands are possible. The semiconductor memory device may include an address bank buffer, address buffer, column predecoder and/or a decoder. The semiconductor memory device may begin execution of a write command in a bank in one clock cycle and begin execution of a read command in the following clock cycle, therefore, bus efficiency is increased and/or write-to-read turn around time is reduced.
摘要:
Devices, circuits and methods synchronize the inputting and outputting of groups of data into a memory cell array and out of a device. Synchronizing is performed by internal clock signals, both of which are derived from a single delay feedback loop.
摘要:
We describe and claim an internal signal replication device and method. A circuit comprising a selector to select one of a plurality of internally generated clock signals, and a compensation circuit to replicate the selected clock signal from a reference clock signal.
摘要:
Disclosed herein is a semiconductor memory device that includes a memory cell array and a plurality of pads for providing data to and from the memory cell array. A plurality of input/output line pairs corresponds to the plurality of pads. A reading means reads out the data from the memory cell array through the plurality of input/output line pairs and pads. A switch control circuit generates sequential switch control signals during a test mode. A switch control means receives the data from the reading means during the test mode. The switching means sequentially transfers the data to a representative pad responsive to the switch control signals. The present invention allows testing for defective memory cells at a wafer level using a limited number of probe needles.
摘要:
An apparatus and a method for measuring an effective channel. The apparatus includes an automatic measurement system including a testing terminal for a substrate, a switching matrix disposed at one side of the automatic measurement system, a leakage current measuring device and a capacitance measuring device electrically connected to the switching matrix by a predetermined terminal, and a controller which controls the automatic measurement system, the leakage current measuring device, and the capacitance measuring device.
摘要:
Semiconductor memory devices, block select decoding circuits and a method of activating a word line are provided. An example semiconductor memory device may include a plurality of memory banks. Each of the plurality of memory banks may include memory blocks which may be arranged in different addressable orders. If two edge memory blocks are activated in a given one of the plurality of memory banks, a non-edge memory block may be concurrently activated in at least one of remaining memory banks other than the given one memory bank. Accordingly, a number of concurrently activated memory blocks, a voltage required to enable a word line and noise may be reduced. The example semiconductor device may include the example block select decoding circuit, and likewise may perform the example method of activating a word line with an activation of a reduced number of memory blocks.
摘要:
A clock supply device for distributing a source clock signal to memory elements in a synchronous memory system reduces skew and improves accuracy by transmitting a first clock signal from a synchronization section located at a first position to a clock distribution section located at a second position and then feeding back a second clock signal to the synchronization section which includes a phase locked loop or delay locked loop. The synchronization section locks the first signal with the source clock signal, thereby controlling the skew between the first clock signal and the source clock signal. The clock distributing section distributes the first clock signal to memory elements and generates the second clock signal as a feedback signal responsive to the first clock signal. The clock supply device includes a first transmission line for transmitting the first clock signal from the first position to the second position, and a second transmission line for transmitting the second clock signal back to the first position. A third transmission line is optionally provided to transmit the source clock signal from a clock generating section located at a third position to the synchronization section at the first position. The signal delay characteristics of the second and third transmission lines are preferably equal.