公开(公告)号：US07759718B2

公开(公告)日：2010-07-20

申请号：US11865869

申请日：2007-10-02

申请人： Sang-yeol Kang ,  Jong-cheol Lee ,  Ki-vin Im ,  Jae-hyun Yeo ,  Hoon-sang Choi ,  Eun-ae Chung

发明人： Sang-yeol Kang ,  Jong-cheol Lee ,  Ki-vin Im ,  Jae-hyun Yeo ,  Hoon-sang Choi ,  Eun-ae Chung

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L21/31641 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31616 ,  H01L28/40

摘要： A method of forming a dielectric layer in a capacitor adapted for use in a semiconductor device is disclosed. The method includes forming a first ZrO2 layer, forming an interfacial layer using a plasma treatment on the first ZrO2 layer, and forming a second ZrO2 layer on the interfacial layer.

摘要翻译： 公开了一种在适用于半导体器件的电容器中形成电介质层的方法。 该方法包括形成第一ZrO 2层，在第一ZrO 2层上使用等离子体处理形成界面层，以及在界面层上形成第二ZrO 2层。

公开(公告)号：US07824501B2

公开(公告)日：2010-11-02

申请号：US11781334

申请日：2007-07-23

申请人： Hoon-sang Choi ,  Jong-cheol Lee ,  Ki-vin Im ,  Eun-ae Chung ,  Sang-yeol Kang ,  Young-sun Kim ,  Kwang-hee Lee

发明人： Hoon-sang Choi ,  Jong-cheol Lee ,  Ki-vin Im ,  Eun-ae Chung ,  Sang-yeol Kang ,  Young-sun Kim ,  Kwang-hee Lee

IPC分类号： B08B9/08 ,  B08B3/08 ,  B08B3/10 ,  B08B5/00

CPC分类号： C23C16/45525 ,  C23C16/4401 ,  C23C16/45544

摘要： Provided is an in-situ method of cleaning a vaporizer of an atomic layer deposition apparatus during a dielectric layer deposition process, to prevent nozzle blocking in the vaporizer and an atomic layer deposition apparatus. During the dielectric layer deposition process, the following steps are repeated: supplying a first source gas for dielectric layer deposition into a chamber of an atomic layer deposition apparatus; purging the first source gas; supplying a second source gas into the chamber of the atomic layer deposition apparatus; purging the second source gas, the in-situ method of cleaning the vaporizer is performed after supplying the first source gas for dielectric layer deposition and before supplying the first source gas again.

摘要翻译： 提供了一种在电介质层沉积工艺期间清洁原子层沉积设备的蒸发器的原位方法，以防止蒸发器和原子层沉积设备中的喷嘴堵塞。 在电介质层沉积过程中，重复以下步骤：将用于电介质层沉积的第一源气体供应到原子层沉积设备的腔室中; 净化第一源气; 将第二源气体供应到原子层沉积设备的腔室中; 吹扫第二源气体时，在供给用于电介质层沉积的第一源气体并再次供应第一源气体之前执行清洗蒸发器的原位方法。

公开(公告)号：US20080121184A1

公开(公告)日：2008-05-29

申请号：US11781334

申请日：2007-07-23

申请人： Hoon-sang Choi ,  Jong-cheol Lee ,  Ki-vin Im ,  Eun-ae Chung ,  Sang-yeol Kang ,  Young-sun Kim ,  Kwang-hee Lee

发明人： Hoon-sang Choi ,  Jong-cheol Lee ,  Ki-vin Im ,  Eun-ae Chung ,  Sang-yeol Kang ,  Young-sun Kim ,  Kwang-hee Lee

IPC分类号： B08B5/00 ,  C23C16/00

CPC分类号： C23C16/45525 ,  C23C16/4401 ,  C23C16/45544

摘要： Provided is an in-situ method of cleaning a vaporizer of an atomic layer deposition apparatus during a dielectric layer deposition process, to prevent nozzle blocking in the vaporizer and an atomic layer deposition apparatus. During the dielectric layer deposition process, the following steps are repeated: supplying a first source gas for dielectric layer deposition into a chamber of an atomic layer deposition apparatus; purging the first source gas; supplying a second source gas into the chamber of the atomic layer deposition apparatus; purging the second source gas, the in-situ method of cleaning the vaporizer is performed after supplying the first source gas for dielectric layer deposition and before supplying the first source gas again.

摘要翻译： 提供了一种在电介质层沉积工艺期间清洁原子层沉积设备的蒸发器的原位方法，以防止蒸发器和原子层沉积设备中的喷嘴堵塞。 在电介质层沉积过程中，重复以下步骤：将用于电介质层沉积的第一源气体供应到原子层沉积设备的腔室中; 净化第一源气; 将第二源气体供应到原子层沉积设备的腔室中; 吹扫第二源气体时，在供给用于电介质层沉积的第一源气体并再次供应第一源气体之前执行清洗蒸发器的原位方法。

公开(公告)号：US20090085160A1

公开(公告)日：2009-04-02

申请号：US12238822

申请日：2008-09-26

申请人： Jong-cheol Lee ,  Jun-noh Lee ,  Ki-vin Im ,  Ki-yeon Park ,  Sung-hae Lee ,  Sang-yeol Kang

发明人： Jong-cheol Lee ,  Jun-noh Lee ,  Ki-vin Im ,  Ki-yeon Park ,  Sung-hae Lee ,  Sang-yeol Kang

IPC分类号： H01L29/92

CPC分类号： H01L29/51 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10852 ,  H01L28/65 ,  H01L29/513

摘要： Provided is a semiconductor device including an insulating layer of a cubic system or a tetragonal system, having good electrical characteristics. The semiconductor device includes a semiconductor substrate including an active region, a transistor that is formed in the active region of the semiconductor substrate, an interlevel insulating layer that is formed on the semiconductor substrate and a contact plug that is formed in the interlevel insulating layer and that is electrically connected to the transistor. The semiconductor device may include a lower electrode that is formed on the interlevel insulating layer and that is electrically connected to the contact plug, an upper electrode that is formed on the lower electrode and an insulating layer of a cubic system or a tetragonal system including a metal silicate layer. The insulating layer may be formed between the lower electrode and the upper electrode.

摘要翻译： 本发明提供一种半导体器件，其具有立方晶系或四方晶系的绝缘层，具有良好的电特性。 半导体器件包括：半导体衬底，包括有源区，形成在半导体衬底的有源区中的晶体管，形成在半导体衬底上的层间绝缘层和形成在层间绝缘层中的接触插塞;以及 其电连接到晶体管。 半导体器件可以包括形成在层间绝缘层上并且与电性连接的接触插塞的下电极，形成在下电极上的上电极和立方体系的绝缘层或包括 金属硅酸盐层。 绝缘层可以形成在下电极和上电极之间。

公开(公告)号：US08710564B2

公开(公告)日：2014-04-29

申请号：US13418472

申请日：2012-03-13

申请人： Jong-cheol Lee ,  Jun-noh Lee ,  Ki-vin Im ,  Ki-yeon Park ,  Sung-hae Lee ,  Sang-yeol Kang

发明人： Jong-cheol Lee ,  Jun-noh Lee ,  Ki-vin Im ,  Ki-yeon Park ,  Sung-hae Lee ,  Sang-yeol Kang

IPC分类号： H01L27/108

CPC分类号： H01L29/51 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10852 ,  H01L28/65 ,  H01L29/513

摘要： Provided is a semiconductor device including an insulating layer of a cubic system or a tetragonal system, having good electrical characteristics. The semiconductor device includes a semiconductor substrate including an active region, a transistor that is formed in the active region of the semiconductor substrate, an interlevel insulating layer that is formed on the semiconductor substrate and a contact plug that is formed in the interlevel insulating layer and that is electrically connected to the transistor. The semiconductor device may include a lower electrode that is formed on the interlevel insulating layer and that is electrically connected to the contact plug, an upper electrode that is formed on the lower electrode and an insulating layer of a cubic system or a tetragonal system including a metal silicate layer. The insulating layer may be formed between the lower electrode and the upper electrode.

摘要翻译： 本发明提供一种半导体器件，其具有立方晶系或四方晶系的绝缘层，具有良好的电特性。 半导体器件包括：半导体衬底，包括有源区，形成在半导体衬底的有源区中的晶体管，形成在半导体衬底上的层间绝缘层和形成在层间绝缘层中的接触插塞;以及 其电连接到晶体管。 半导体器件可以包括形成在层间绝缘层上并且与电性连接的接触插塞的下电极，形成在下电极上的上电极和立方体系的绝缘层或包括 金属硅酸盐层。 绝缘层可以形成在下电极和上电极之间。

公开(公告)号：US08399364B2

公开(公告)日：2013-03-19

申请号：US13019636

申请日：2011-02-02

申请人： Kil-chul Kim ,  Jong-cheol Lee ,  Ki-vin Im ,  Jae-hyun Yeo

发明人： Kil-chul Kim ,  Jong-cheol Lee ,  Ki-vin Im ,  Jae-hyun Yeo

IPC分类号： H01L21/471

CPC分类号： H01L28/40 ,  H01L27/1085 ,  H01L27/11568

摘要： Methods of manufacturing semiconductor devices including multilayer dielectric layers are disclosed. The methods include forming a multilayer dielectric layer including metal atoms and silicon atoms on a semiconductor substrate. The multilayer dielectric layer includes at least two crystalline metal silicate layers having different silicon concentrations. The multilayer dielectric layer may be used, for example, as a dielectric layer for a capacitor, or as a blocking layer for a nonvolatile memory device.

摘要翻译： 公开了制造包括多层电介质层的半导体器件的方法。 所述方法包括在半导体衬底上形成包括金属原子和硅原子的多层电介质层。 多层介电层包括至少两个具有不同硅浓度的结晶金属硅酸盐层。 多层介电层可以用作电容器的介质层，也可以用作非易失性存储器件的阻挡层。

公开(公告)号：US20120168904A1

公开(公告)日：2012-07-05

申请号：US13418472

申请日：2012-03-13

申请人： Jong-cheol Lee ,  Jun-noh Lee ,  Ki-vin Im ,  Ki-yeon Park ,  Sung-hae Lee ,  Sang-yeol Kang

发明人： Jong-cheol Lee ,  Jun-noh Lee ,  Ki-vin Im ,  Ki-yeon Park ,  Sung-hae Lee ,  Sang-yeol Kang

IPC分类号： H01L29/92

CPC分类号： H01L29/51 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10852 ,  H01L28/65 ,  H01L29/513

摘要： Provided is a semiconductor device including an insulating layer of a cubic system or a tetragonal system, having good electrical characteristics. The semiconductor device includes a semiconductor substrate including an active region, a transistor that is formed in the active region of the semiconductor substrate, an interlevel insulating layer that is formed on the semiconductor substrate and a contact plug that is formed in the interlevel insulating layer and that is electrically connected to the transistor. The semiconductor device may include a lower electrode that is formed on the interlevel insulating layer and that is electrically connected to the contact plug, an upper electrode that is formed on the lower electrode and an insulating layer of a cubic system or a tetragonal system including a metal silicate layer. The insulating layer may be formed between the lower electrode and the upper electrode.

摘要翻译： 本发明提供一种半导体器件，其具有立方晶系或四方晶系的绝缘层，具有良好的电特性。 半导体器件包括：半导体衬底，包括有源区，形成在半导体衬底的有源区中的晶体管，形成在半导体衬底上的层间绝缘层和形成在层间绝缘层中的接触插塞;以及 其电连接到晶体管。 半导体器件可以包括形成在层间绝缘层上并且与电性连接的接触插塞的下电极，形成在下电极上的上电极和立方体系的绝缘层或包括 金属硅酸盐层。 绝缘层可以形成在下电极和上电极之间。

公开(公告)号：US08159012B2

公开(公告)日：2012-04-17

申请号：US12238822

申请日：2008-09-26

申请人： Jong-cheol Lee ,  Jun-noh Lee ,  Ki-vin Im ,  Ki-yeon Park ,  Sung-hae Lee ,  Sang-yeol Kang

发明人： Jong-cheol Lee ,  Jun-noh Lee ,  Ki-vin Im ,  Ki-yeon Park ,  Sung-hae Lee ,  Sang-yeol Kang

IPC分类号： H01L27/108

CPC分类号： H01L29/51 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10852 ,  H01L28/65 ,  H01L29/513

摘要： Provided is a semiconductor device including an insulating layer of a cubic system or a tetragonal system, having good electrical characteristics. The semiconductor device includes a semiconductor substrate including an active region, a transistor that is formed in the active region of the semiconductor substrate, an interlevel insulating layer that is formed on the semiconductor substrate and a contact plug that is formed in the interlevel insulating layer and that is electrically connected to the transistor. The semiconductor device may include a lower electrode that is formed on the interlevel insulating layer and that is electrically connected to the contact plug, an upper electrode that is formed on the lower electrode and an insulating layer of a cubic system or a tetragonal system including a metal silicate layer. The insulating layer may be formed between the lower electrode and the upper electrode.

摘要翻译： 本发明提供一种半导体器件，其具有立方晶系或四方晶系的绝缘层，具有良好的电特性。 半导体器件包括：半导体衬底，包括有源区，形成在半导体衬底的有源区中的晶体管，形成在半导体衬底上的层间绝缘层和形成在层间绝缘层中的接触插塞;以及 其电连接到晶体管。 半导体器件可以包括形成在层间绝缘层上并且与电性连接的接触插塞的下电极，形成在下电极上的上电极和立方体系的绝缘层或包括 金属硅酸盐层。 绝缘层可以形成在下电极和上电极之间。

公开(公告)号：US20110230056A1

公开(公告)日：2011-09-22

申请号：US13019636

申请日：2011-02-02

申请人： Kil-chul Kim ,  Jong-cheol Lee ,  Ki-vin Im ,  Jae-hyun Yeo

发明人： Kil-chul Kim ,  Jong-cheol Lee ,  Ki-vin Im ,  Jae-hyun Yeo

IPC分类号： H01L21/471

CPC分类号： H01L28/40 ,  H01L27/1085 ,  H01L27/11568

摘要： Methods of manufacturing semiconductor devices including multilayer dielectric layers are disclosed. The methods include forming a multilayer dielectric layer including metal atoms and silicon atoms on a semiconductor substrate. The multilayer dielectric layer includes at least two crystalline metal silicate layers having different silicon concentrations. The multilayer dielectric layer may be used, for example, as a dielectric layer for a capacitor, or as a blocking layer for a nonvolatile memory device.

摘要翻译： 公开了制造包括多层电介质层的半导体器件的方法。 所述方法包括在半导体衬底上形成包括金属原子和硅原子的多层电介质层。 多层介电层包括至少两个具有不同硅浓度的结晶金属硅酸盐层。 多层介电层可以用作电容器的介质层，也可以用作非易失性存储器件的阻挡层。

公开(公告)号：US08357593B2

公开(公告)日：2013-01-22

申请号：US12688044

申请日：2010-01-15

申请人： Ki-chul Kim ,  Youn-soo Kim ,  Ki-vin Im ,  Cha-young Yoo ,  Jong-cheol Lee ,  Ki-yeon Park ,  Hoon-sang Choi ,  Se-hoon Oh

发明人： Ki-chul Kim ,  Youn-soo Kim ,  Ki-vin Im ,  Cha-young Yoo ,  Jong-cheol Lee ,  Ki-yeon Park ,  Hoon-sang Choi ,  Se-hoon Oh

IPC分类号： H01L21/322

CPC分类号： H01L21/314 ,  H01L21/02041 ,  H01L21/67034

摘要： Provided are methods of removing water adsorbed or bonded to a surface of a semiconductor substrate, and methods of depositing an atomic layer using the method of removing water described herein. The method of removing water includes applying a chemical solvent to the surface of a semiconductor substrate, and removing the chemical solvent from the surface of the semiconductor substrate.

摘要翻译： 提供了除去吸附或结合到半导体衬底的表面的水的方法，以及使用本文所述除去水的方法沉积原子层的方法。 除去水的方法包括向半导体衬底的表面施加化学溶剂，并从半导体衬底的表面除去化学溶剂。