Metal polishing slurry and polishing method
    2.
    发明授权
    Metal polishing slurry and polishing method 有权
    金属抛光浆和抛光方法

    公开(公告)号:US08821750B2

    公开(公告)日:2014-09-02

    申请号:US12527607

    申请日:2008-02-22

    摘要: The present invention relates to a metal polishing slurry containing abrasive grains, a metal-oxide-dissolving agent, and water, wherein the abrasive grains contain two or more abrasive grain species different from each other in average secondary particle diameter. Using the metal polishing slurry of the present invention, a metal polishing slurry can be obtained which gives a large polishing rate of an interlayer dielectric layer, and is high in the flatness of the polished surface. This metal polishing slurry can provide suitable method for a semiconductor device which is excellent in being made finer and thinner and in dimension precision and in electric characteristics, is high in reliability, and can attain a decrease in costs.

    摘要翻译: 本发明涉及含有磨粒,金属氧化物溶解剂和水的金属抛光浆料,其中磨粒含有平均二次粒径彼此不同的两种或更多种磨粒。 使用本发明的金属研磨浆,可以得到层状电介质层的研磨速度高的金属研磨浆料,并且抛光面的平坦度高。 这种金属抛光浆料可以提供适合于制造更细和更薄,尺寸精度和电特性优异的可靠性高的半导体器件的方法,并且可以降低成本。

    Injection device having a reciprocal plunger
    4.
    发明授权
    Injection device having a reciprocal plunger 失效
    注射装置具有往复式柱塞

    公开(公告)号:US07399178B2

    公开(公告)日:2008-07-15

    申请号:US11280253

    申请日:2005-11-17

    IPC分类号: B29C45/48

    CPC分类号: B29C45/53 B29C45/17

    摘要: In an injection device 10 having a plunger 11 reciprocably inserted into a heating cylinder 16, in which a molten material M is injected by the plunger 11 via a nozzle 21, a sealing portion 13 set so that the molten material M is prevented from easily entering a gap A between the plunger 11 and an inner wall 32 of the heating cylinder 16 is provided on the portion of the plunger 11, on the side of the nozzle 21, and the portion of the sealing portion 13, on the side of the nozzle 21 is a core keeping portion 14 provided so that an annular portion 20 which is formed on a front portion of the plunger 11 and is connected to a storage portion 19 of the molten material M is formed between the core keeping portion 14 and the inner wall 32 of the heating cylinder 16.

    摘要翻译: 在具有往复插入到加热缸16中的柱塞11的注射装置10中,其中通过喷嘴21由柱塞11注入熔融材料M,密封部13被设定成使得熔融材料M被阻止容易地进入 柱塞11和加热缸16的内壁32之间的间隙A设置在柱塞11的喷嘴21侧,部分密封部13的喷嘴侧 图21所示的芯部保持部14被设置成使得形成在柱塞11的前部并连接到熔融材料M的容纳部分19的环形部分20形成在芯保持部分14和内壁 32。

    Optimal menu inquiry system and system for editing structure data by
hierarchical menu inquiry processing
    6.
    发明授权
    Optimal menu inquiry system and system for editing structure data by hierarchical menu inquiry processing 失效
    最优菜单查询系统和通过分层菜单查询处理编辑结构数据的系统

    公开(公告)号:US5546522A

    公开(公告)日:1996-08-13

    申请号:US197194

    申请日:1994-02-16

    CPC分类号: G06F8/38

    摘要: An optimal menu inquiry system includes a skeleton data generating means, a tree structure data constructing means, a menu display means, a control means, and a menu candidate determining means. The skeleton data generating means generates inquiries, from a rule description describing the context of the inquiries, as skeleton data by sequentially linking the inquiries, from the first inquiry to the subsequent inquiries, in the form of a tree structure. The tree structure data constructing means constructs and updates tree structure data by sequentially retracing the skeleton data from first data. The menu display means displays menu items corresponding to constructed/updated tree structure data. The control means controls the tree structure data constructing means to update the tree structure data when one of the menu items displayed by the menu display means is selected. The menu candidate determining means evaluates an evaluable expression in the skeleton data by referring to the updated structure data, and determines menu item candidates to be displayed by the menu display means.

    摘要翻译: 最佳菜单查询系统包括骨架数据生成装置,树结构数据构成装置,菜单显示装置,控制装置和菜单候选确定装置。 骨架数据生成装置通过以树结构的形式从第一查询到后续查询顺序地连接查询,从描述查询的上下文的规则描述生成查询。 树结构数据构造装置通过从第一数据顺序地回溯骨架数据来构建和更新树结构数据。 菜单显示装置显示与构造/更新的树结构数据相对应的菜单项。 当选择由菜单显示装置显示的菜单项之一时,控制装置控制树结构数据构造装置来更新树结构数据。 菜单候选确定装置通过参考更新的结构数据来评估骨架数据中的可评估表达,并且确定要由菜单显示装置显示的菜单项候选。

    Semiconductor integrated circuit device

    公开(公告)号:US4771406A

    公开(公告)日:1988-09-13

    申请号:US40848

    申请日:1987-04-21

    CPC分类号: G11C11/34 G11C11/406

    摘要: A semiconductor integrated circuit device which constitutes a dynamic RAM has an automatic refresh circuit that contains a refresh timer circuit. The refresh timer circuit has a program element such as a fuse element. The program element is programmed depending upon the data holding characteristics of the dynamic memory cells. Therefore, the refresh period is changed depending upon the characteristics of the dynamic memory cells. According to this construction, the refresh period changes and, as a result, any undesired refresh operation is prevented from being executed, making it possible to reduce the amount of electric power consumed by the circuit device.

    Abrading agent and abrading method
    8.
    发明授权
    Abrading agent and abrading method 有权
    研磨剂和研磨方法

    公开(公告)号:US08845915B2

    公开(公告)日:2014-09-30

    申请号:US13201518

    申请日:2010-01-22

    摘要: A polishing agent which comprises a composition containing an inorganic acid, an amino acid, a protective film-forming agent, an abrasive, an oxidizing agent, an organic acid and water, adjusted to a pH of 1.5-4, wherein the amount of potassium hydroxide required to raise the pH of the composition without the organic acid to 4 is at least 0.10 mol with respect to 1 kg of the composition without the organic acid, and the organic acid contains at least two carboxyl groups, wherein the logarithm of the inverse of the first acid dissociation constant (pKa1) is no greater than 3.

    摘要翻译: 一种抛光剂,其包含调节至pH为1.5-4的无机酸,氨基酸,保护膜形成剂,研磨剂,氧化剂,有机酸和水的组合物,其中钾的量 相对于1kg不含有机酸的组合物,无机有机物将组合物的pH升高至4所需的氢氧化物为至少0.10mol,有机酸含有至少两个羧基,其中反相的对数 的第一个酸解离常数(pKa1)不大于3。

    CMP POLISHING LIQUID, METHOD FOR POLISHING SUBSTRATE, AND ELECTRONIC COMPONENT
    10.
    发明申请
    CMP POLISHING LIQUID, METHOD FOR POLISHING SUBSTRATE, AND ELECTRONIC COMPONENT 审中-公开
    CMP抛光液,抛​​光底物的方法和电子元件

    公开(公告)号:US20120299158A1

    公开(公告)日:2012-11-29

    申请号:US13265926

    申请日:2010-12-10

    摘要: The CMP polishing liquid of the invention is used by mixing a first solution and a second solution, the first solution comprises cerium-based abrasive grains, a dispersant and water, the second solution comprises a polyacrylic acid compound, a surfactant, a pH regulator, a phosphoric acid compound and water, the pH of the second solution is 6.5 or higher, and the first solution and second solution are mixed so that the phosphoric acid compound content is within a prescribed range. The CMP polishing liquid of the invention comprises cerium-based abrasive grains, a dispersant, a polyacrylic acid compound, a surfactant, a pH regulator, a phosphoric acid compound and water, with the phosphoric acid compound content being within a prescribed range.

    摘要翻译: 本发明的CMP抛光液通过混合第一溶液和第二溶液来使用,第一溶液包括铈基磨料颗粒,分散剂和水,第二溶液包含聚丙烯酸化合物,表面活性剂,pH调节剂, 磷酸化合物和水,第二溶液的pH为6.5以上,第一溶液和第二溶液混合,使得磷酸化合物含量在规定范围内。 本发明的CMP抛光液含有磷酸化合物含量在规定范围内的铈系磨粒,分散剂,聚丙烯酸化合物,表面活性剂,pH调节剂,磷酸化合物和水。