摘要:
A low alloy steel ingot contains from 0.15 to 0.30% of C, from 0.03 to 0.2% of Si, from 0.5 to 2.0% of Mn, from 0.1 to 1.3% of Ni, from 1.5 to 3.5% of Cr, from 0.1 to 1.0% of Mo, and more than 0.15 to 0.35% of V, and optionally Ni, with a balance being Fe and unavoidable impurities. Performing quality heat treatment including a quenching step and a tempering step to the low alloy steel ingot to obtain a material, which has a grain size number of from 3 to 7 and is free from pro-eutectoid ferrite in a metallographic structure thereof, and which has a tensile strength of from 760 to 860 MPa and a fracture appearance transition temperature of not higher than 40 ° C.
摘要:
Provided is a film forming apparatus for forming a film on a substrate maintained within a film forming container by supplying a raw material gas to the substrate. The film forming container includes a substrate maintaining unit, a supply mechanism configured to include a supply pipe with supply holes formed thereon to supply a raw material gas to the interior of the film forming container through the supply holes, an exhaust mechanism configured to include an exhaust pipe with exhaust holes formed thereon to exhaust gas from the interior of the film forming container through the exhaust holes, and a controller configured to control the substrate maintaining unit, the supply mechanism, and the exhaust mechanism. The supply holes and the exhaust holes are formed to face each other with the substrate maintained in the substrate maintaining unit interposed therebetween.
摘要:
A technique for improving the cooling performance of a combustion chamber in a combustion power tool is provided. The combustion power tool includes first and second combustion chambers, a partition that separates the first combustion chamber from the second combustion chamber, openings, formed in the partition and communicate the first combustion chamber with the second combustion chamber, and a drive section that moves toward a front end by combustion pressure. The combustion pressure is generated when a flow of flammable gas, which is produced by combustion of the flammable gas in the first combustion chamber propagates to the second combustion chamber through the openings, and burns flammable gas in the second combustion chamber. The combustion gas flows from the first combustion chamber to the second combustion chamber in a direction around a central axis of the second combustion chamber while flowing along an inner wall of the second combustion chamber.
摘要:
A stage apparatus that achieves a high accuracy in assembling and enables easy work at a real installation site. In a stage apparatus of the present invention, sub rails are arranged on respective sub base plates, which are connected respectively with the first and second main rails on a main base plate to extend the first and second main rails. Accordingly, when the sub base plates are fixed to the main base plate 11 with positional alignment performed therebetween, the accuracy in positional alignment of the sub base plates which has already been fixed to the main base plate is not affected.
摘要:
The shielding gas for MAG welding according to an embodiment is a shielding gas for MAG welding to perform narrow gap welding of a high Cr steel containing 8 wt % to 13 wt % of Cr with one layer-one pass by using a solid wire containing 8 wt % to 13 wt % of Cr, and the shielding gas for MAG welding comprises a ternary mixed gas of 5% by volume to 17% by volume of a carbon dioxide gas, 30% by volume to 80% by volume of a helium gas, and a balance of an argon gas.
摘要:
A method for manufacturing a semiconductor device comprises: forming a lower electrode on a semiconductor substrate, sputtering a ferroelectric film on the lower electrode using a target, thermal treating the ferroelectric film in an atmosphere containing oxygen in accordance with an accumulated period of use of the target for fabricating the ferroelectric film, and forming an upper electrode on the ferroelectric film.
摘要:
A semiconductor device which has a semiconductor substrate, an isolation insulating film formed in the semiconductor substrate, a conductive pattern formed over the semiconductor substrate and the isolation insulating film, so that a side face of the conductive pattern is formed over the isolation insulating film, and an insulating film is formed over the isolation insulating film, the conductive pattern and the side face of the conductive pattern, and the side face of the conductive pattern comprises a notch.
摘要:
According to the method for manufacturing a semiconductor device, a surface of a lower insulating film (55) is planarized by CMP or the like, and an upper insulating film (56) and a protective metal film (59) are formed on the lower insulating film (55). Accordingly, the upper insulating film (56) and the protective metal film (59) are formed in such a manner they have an excellent coverage and the water/hydrogen blocking capability of the upper insulating film (56) and the protective metal film (59) is maximized.
摘要:
According to the method for manufacturing a semiconductor device, a surface of a lower, insulating film (55) is planarized by CMP or the like, and an upper insulating film (56) and a protective metal film (59) are formed on the lower insulating film (55). Accordingly, the upper insulating film (56) and the protective metal film (59) are formed in such a manner they have an excellent coverage and the water/hydrogen blocking capability of the upper insulating film (56) and the protective metal film (59) is maximized.
摘要:
A protective film (56) having a water/hydrogen blocking function is formed so as to cover the periphery of a pad electrode (54a) while being electrically isolated from the pad electrode. A material selected in the embodiment for composing the protective film is a highly moisture-proof material having a water/hydrogen blocking function considerably superior to that of the insulating material, such as palladium (Pd) or palladium-containing material, and iridium (Ir) or iridium oxide (IrOx: typically x=2) or an iridium- or iridium oxide-containing material. An FeRAM capable of reliably preventing water/hydrogen from entering inside, and of maintaining high performance of the ferroelectric capacitor structure (30) may be realized only by a simple configuration.
摘要翻译:形成具有水/氢阻断功能的保护膜(56),以便在与焊盘电极电隔离的同时覆盖焊盘电极(54a)的外围。 用于构成保护膜的实施方案中选择的材料是具有显着优于绝缘材料(例如钯(Pd)或含钯材料)和铱(Ir)的防氢/阻氢功能的高度防潮材料 )或氧化铱(IrO x x:通常为x = 2)或含铱或氧化铱的材料。 可以通过简单的结构来实现能够可靠地防止水/氢进入内部并且保持铁电电容器结构(30)的高性能的FeRAM。