公开(公告)号：US09580791B2

公开(公告)日：2017-02-28

申请号：US13697164

申请日：2011-04-26

申请人： Satoshi Inoue ,  Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda

发明人： Satoshi Inoue ,  Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda

IPC分类号： C23C16/04 ,  H05B33/10 ,  C23C14/04 ,  B05C21/00 ,  H01L51/00 ,  H01L51/50

CPC分类号： C23C14/042 ,  B05C21/005 ,  H01L51/0011 ,  H01L51/50

摘要： A vapor deposition mask (70) includes a first layer (71), a second layer (72) and a third layer (73) in this order. A plurality of first openings (71h), a plurality of second openings (72h) and a plurality of third openings (73h) are formed respectively in the first layer, the second layer and the third layer. The first openings, the second openings and the third openings communicate with each other, thereby constituting mask openings (75). The opening dimension of the second openings is larger than the opening dimension of the first openings and is larger than the opening dimension of the third openings. With this configuration, it is possible to prevent reduction of the opening dimension of the mask openings or clogging of the mask openings due to the vapor deposition particles adhering to the mask openings.

摘要翻译： 蒸镀掩模（70）依次包括第一层（71），第二层（72）和第三层（73）。 多个第一开口（71h），多个第二开口（72h）和多个第三开口（73h）分别形成在第一层，第二层和第三层中。 第一开口，第二开口和第三开口彼此连通，从而构成掩模开口（75）。 第二开口的开口尺寸大于第一开口的开口尺寸，并且大于第三开口的开口尺寸。 利用这种构造，可以防止由于气相沉积颗粒粘附到掩模开口而导致的掩模开口的开口尺寸的减小或掩模开口的堵塞。

公开(公告)号：US09391275B2

公开(公告)日：2016-07-12

申请号：US13703873

申请日：2011-08-17

申请人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato ,  Satoshi Inoue

发明人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato ,  Satoshi Inoue

IPC分类号： C23C16/00 ,  H01L51/00 ,  C23C14/04 ,  H01L27/32 ,  H01L51/56

CPC分类号： H01L51/0008 ,  C23C14/042 ,  H01L27/3211 ,  H01L27/3244 ,  H01L51/0011 ,  H01L51/56

摘要： A vapor deposition source (60), a plurality of control plates (80) and a vapor deposition mask (70) are disposed in this order. A substrate (10) is moved relative to the vapor deposition mask in a state in which the substrate and the vapor deposition mask are spaced apart at a fixed interval. Vapor deposition particles (91) discharged from a vapor deposition source opening (61) of the vapor deposition source pass through neighboring inter-control plate spaces (81) and mask openings (71) formed in the vapor deposition mask, and then adhere to the substrate to form a coating film (90). At least a part of the coating film is formed by the vapor deposition particles that have passed through two or more different inter-control plate spaces. It is thereby possible to form a coating film in which edge blur and variations in the thickness are suppressed.

摘要翻译： 蒸镀源（60），多个控制板（80）和蒸镀掩模（70）依次配置。 在基板和气相沉积掩模以固定间隔间隔开的状态下，基板（10）相对于气相沉积掩模移动。 从气相沉积源的气相沉积源开口（61）排出的气相沉积颗粒（91）通过相邻的控制板间隙（81）和形成在气相沉积掩模中的掩模开口（71），然后粘附到 基板以形成涂膜（90）。 涂膜的至少一部分由已经通过两个或更多个不同的控制间隙的气相沉积颗粒形成。 由此，可以形成抑制边缘模糊和厚度变化的涂膜。

公开(公告)号：US08628620B2

公开(公告)日：2014-01-14

申请号：US13977645

申请日：2011-12-28

申请人： Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

发明人： Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

IPC分类号： C23C16/04 ,  C23C16/00 ,  C23C14/24 ,  C23C14/22 ,  C23C14/00

CPC分类号： H01L21/02263 ,  C23C14/042 ,  C23C14/12 ,  C23C14/562 ,  H01L21/67017 ,  H01L51/0008 ,  H01L51/56

摘要： A vapor deposition device (50) includes a mask (60) having periodic patterns, and only a region of the mask (60) where a one-period pattern is formed is exposed. A length of the mask base material along a direction perpendicular to a long-side direction of the mask base material is shorter than a length of a film formation substrate (200) along a direction of scanning of the film formation substrate (200). The mask (60) is provided so that the long-side direction of the mask base material is perpendicular to the direction of scanning and that the exposed region is allowed to move in a direction perpendicular to the direction of scanning by rotation of a wind-off roll (91) and a wind-up roll (92).

摘要翻译： 气相沉积装置（50）包括具有周期性图案的掩模（60），并且仅露出形成有一个周期图案的掩模（60）的区域。 掩模基材沿着与掩模基材的长边方向垂直的方向的长度比成膜基板（200）沿着成膜基板（200）的扫描方向的长度短。 掩模（60）设置成使得掩模基材的长边方向垂直于扫描方向，并且允许暴露区域沿着与扫描方向垂直的方向移动， 卷筒（91）和卷绕辊（92）。

公开(公告)号：US20130273746A1

公开(公告)日：2013-10-17

申请号：US13977645

申请日：2011-12-28

申请人： Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

发明人： Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

IPC分类号： H01L21/02 ,  H01L21/67

CPC分类号： H01L21/02263 ,  C23C14/042 ,  C23C14/12 ,  C23C14/562 ,  H01L21/67017 ,  H01L51/0008 ,  H01L51/56

摘要： A vapor deposition device (50) includes a mask (60) having periodic patterns, and only a region of the mask (60) where a one-period pattern is formed is exposed. A length of the mask base material along a direction perpendicular to a long-side direction of the mask base material is shorter than a length of a film formation substrate (200) along a direction of scanning of the film formation substrate (200). The mask (60) is provided so that the long-side direction of the mask base material is perpendicular to the direction of scanning and that the exposed region is allowed to move in a direction perpendicular to the direction of scanning by rotation of a wind-off roll (91) and a wind-up roll (92).

摘要翻译： 气相沉积装置（50）包括具有周期性图案的掩模（60），并且仅露出形成有一个周期图案的掩模（60）的区域。 掩模基材沿着与掩模基材的长边方向垂直的方向的长度比成膜基板（200）沿着成膜基板（200）的扫描方向的长度短。 掩模（60）设置成使得掩模基材的长边方向垂直于扫描方向，并且允许暴露区域沿着与扫描方向垂直的方向移动， 卷筒（91）和卷绕辊（92）。

公开(公告)号：US20130089941A1

公开(公告)日：2013-04-11

申请号：US13703873

申请日：2011-08-17

申请人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato ,  Satoshi Inoue

发明人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato ,  Satoshi Inoue

IPC分类号： H01L51/00

CPC分类号： H01L51/0008 ,  C23C14/042 ,  H01L27/3211 ,  H01L27/3244 ,  H01L51/0011 ,  H01L51/56

摘要： A vapor deposition source (60), a plurality of control plates (80) and a vapor deposition mask (70) are disposed in this order. A substrate (10) is moved relative to the vapor deposition mask in a state in which the substrate and the vapor deposition mask are spaced apart at a fixed interval. Vapor deposition particles (91) discharged from a vapor deposition source opening (61) of the vapor deposition source pass through neighboring inter-control plate spaces (81) and mask openings (71) formed in the vapor deposition mask, and then adhere to the substrate to form a coating film (90). At least a part of the coating film is formed by the vapor deposition particles that have passed through two or more different inter-control plate spaces. It is thereby possible to form a coating film in which edge blur and variations in the thickness are suppressed.

摘要翻译： 蒸镀源（60），多个控制板（80）和蒸镀掩模（70）依次配置。 在基板和气相沉积掩模以固定间隔间隔开的状态下，基板（10）相对于气相沉积掩模移动。 从气相沉积源的气相沉积源开口（61）排出的气相沉积颗粒（91）通过相邻的控制板间隙（81）和形成在气相沉积掩模中的掩模开口（71），然后粘附到 基板以形成涂膜（90）。 涂膜的至少一部分由已经通过两个或更多个不同的控制间隙的气相沉积颗粒形成。 由此，可以形成抑制边缘模糊和厚度变化的涂膜。

公开(公告)号：US20130017320A1

公开(公告)日：2013-01-17

申请号：US13637627

申请日：2011-02-10

申请人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato ,  Satoshi Inoue

发明人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato ,  Satoshi Inoue

IPC分类号： H05B33/10

CPC分类号： H05B33/10 ,  C23C14/042 ,  C23C14/044 ,  C23C14/12 ,  C23C14/225 ,  C23C14/24 ,  H01L27/3211 ,  H01L51/0011 ,  H01L51/56

摘要： A deposition apparatus 50 forms a thin film 3 in a predetermined pattern on a substrate 10 for an organic EL display. A first correction plate 81 and a second correction plate 82 are placed between a shadow mask 60 and a deposition source 53 that emits deposition particles. Each of the correction plates 81, 82 has a plurality of blade plates 83 and a frame 84 that supports the plurality of blade plates 83. The blade plates 83 are placed so as to be tilted with respect to the shadow mask 60, and to extend parallel to each other with an opening 86 between adjoining ones of the blade plates 83 as viewed in a direction perpendicular the deposition mask 60.

摘要翻译： 沉积装置50在用于有机EL显示器的基板10上以预定图案形成薄膜3。 第一校正板81和第二校正板82被放置在荫罩60和发射沉积颗粒的沉积源53之间。 每个校正板81,82具有多个叶片83和支撑多个叶片板83的框架84.叶片板83相对于荫罩60倾斜放置，并且延伸 在与沉积掩模60垂直的方向上观察时，在相邻的刮板83之间具有开口86，彼此平行。

公开(公告)号：US09055653B2

公开(公告)日：2015-06-09

申请号：US13637627

申请日：2011-02-10

申请人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato ,  Satoshi Inoue

发明人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato ,  Satoshi Inoue

IPC分类号： C23C14/24 ,  C23C14/04 ,  H05B33/10 ,  C23C14/12 ,  C23C14/22 ,  H01L27/32 ,  H01L51/56 ,  H01L51/00

CPC分类号： H05B33/10 ,  C23C14/042 ,  C23C14/044 ,  C23C14/12 ,  C23C14/225 ,  C23C14/24 ,  H01L27/3211 ,  H01L51/0011 ,  H01L51/56

摘要： A deposition apparatus 50 forms a thin film 3 in a predetermined pattern on a substrate 10 for an organic EL display. A first correction plate 81 and a second correction plate 82 are placed between a shadow mask 60 and a deposition source 53 that emits deposition particles. Each of the correction plates 81, 82 has a plurality of blade plates 83 and a frame 84 that supports the plurality of blade plates 83. The blade plates 83 are placed so as to be tilted with respect to the shadow mask 60, and to extend parallel to each other with an opening 86 between adjoining ones of the blade plates 83 as viewed in a direction perpendicular the deposition mask 60.

摘要翻译： 沉积装置50在用于有机EL显示器的基板10上以预定图案形成薄膜3。 第一校正板81和第二校正板82被放置在荫罩60和发射沉积颗粒的沉积源53之间。 每个校正板81,82具有多个叶片83和支撑多个叶片板83的框架84.叶片板83相对于荫罩60倾斜放置，并且延伸 在与沉积掩模60垂直的方向上观察时，在相邻的刮板83之间具有开口86，彼此平行。

公开(公告)号：US09231210B2

公开(公告)日：2016-01-05

申请号：US13696585

申请日：2011-05-02

申请人： Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

发明人： Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

IPC分类号： H05B33/10 ,  H01L51/00 ,  C23C14/04 ,  C23C14/12 ,  C23C14/24 ,  H01L27/32 ,  H01L51/56

CPC分类号： H01L51/001 ,  C23C14/042 ,  C23C14/12 ,  C23C14/24 ,  H01L27/3211 ,  H01L51/56

摘要： A vapor deposition source (60), a plurality of limiting plates (81) and a vapor deposition mask (70) are disposed in this order. A substrate spaced apart from the vapor deposition mask at a fixed interval is moved relative to the vapor deposition mask. Vapor deposition particles (91) discharged from vapor deposition source openings (61) of the vapor deposition source pass through between neighboring limiting plates, pass through mask openings (71) formed in the vapor deposition mask, and adhere to the substrate, whereby coating films (90) are formed. The limiting plates limit the incidence angle of the vapor deposition particles that enter the mask openings, as viewed in the relative movement direction of the substrate. In this way, an organic EL element can be formed on a large-sized substrate without increasing the pixel pitch or reducing the aperture ratio.

摘要翻译： 蒸镀源（60），多个限制板（81）和气相沉积掩模（70）按此顺序设置。 以固定间隔与蒸镀掩模间隔开的基板相对于蒸镀掩模移动。 从气相沉积源的蒸镀源开口（61）排出的蒸镀颗粒（91）通过相邻的限制板之间通过形成在蒸镀掩模中的掩模开口（71），并附着在基板上， （90）。 限制板限制了进入掩模开口的气相沉积颗粒的入射角，如在基板的相对移动方向上所看到的。 以这种方式，可以在大尺寸基板上形成有机EL元件，而不增加像素间距或降低开口率。

公开(公告)号：US20130059063A1

公开(公告)日：2013-03-07

申请号：US13696585

申请日：2011-05-02

申请人： Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

发明人： Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

IPC分类号： H05B33/10 ,  C23C16/04

CPC分类号： H01L51/001 ,  C23C14/042 ,  C23C14/12 ,  C23C14/24 ,  H01L27/3211 ,  H01L51/56

摘要： A vapor deposition source (60), a plurality of limiting plates (81) and a vapor deposition mask (70) are disposed in this order. A substrate spaced apart from the vapor deposition mask at a fixed interval is moved relative to the vapor deposition mask. Vapor deposition particles (91) discharged from vapor deposition source openings (61) of the vapor deposition source pass through between neighboring limiting plates, pass through mask openings (71) formed in the vapor deposition mask, and adhere to the substrate, whereby coating films (90) are formed. The limiting plates limit the incidence angle of the vapor deposition particles that enter the mask openings, as viewed in the relative movement direction of the substrate. In this way, an organic EL element can be formed on a large-sized substrate without increasing the pixel pitch or reducing the aperture ratio.

摘要翻译： 蒸镀源（60），多个限制板（81）和气相沉积掩模（70）按此顺序设置。 以固定间隔与蒸镀掩模间隔开的基板相对于蒸镀掩模移动。 从气相沉积源的蒸镀源开口（61）排出的蒸镀颗粒（91）通过相邻的限制板之间通过形成在蒸镀掩模中的掩模开口（71），并附着在基板上， （90）。 限制板限制了进入掩模开口的气相沉积颗粒的入射角，如在基板的相对移动方向上所看到的。 以这种方式，可以在大尺寸基板上形成有机EL元件，而不增加像素间距或降低开口率。

公开(公告)号：US20130064969A1

公开(公告)日：2013-03-14

申请号：US13697164

申请日：2011-04-26

申请人： Satoshi Inoue ,  Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda

发明人： Satoshi Inoue ,  Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda

IPC分类号： C23C16/04 ,  H05B33/10

CPC分类号： C23C14/042 ,  B05C21/005 ,  H01L51/0011 ,  H01L51/50

摘要： A vapor deposition mask (70) includes a first layer (71), a second layer (72) and a third layer (73) in this order. A plurality of first openings (71h), a plurality of second openings (72h) and a plurality of third openings (73h) are formed respectively in the first layer, the second layer and the third layer. The first openings, the second openings and the third openings communicate with each other, thereby constituting mask openings (75). The opening dimension of the second openings is larger than the opening dimension of the first openings and is larger than the opening dimension of the third openings. With this configuration, it is possible to prevent reduction of the opening dimension of the mask openings or clogging of the mask openings due to the vapor deposition particles adhering to the mask openings.

摘要翻译： 蒸镀掩模（70）依次包括第一层（71），第二层（72）和第三层（73）。 多个第一开口（71h），多个第二开口（72h）和多个第三开口（73h）分别形成在第一层，第二层和第三层中。 第一开口，第二开口和第三开口彼此连通，从而构成掩模开口（75）。 第二开口的开口尺寸大于第一开口的开口尺寸，并且大于第三开口的开口尺寸。 利用这种构造，可以防止由于气相沉积颗粒粘附到掩模开口而导致的掩模开口的开口尺寸的减小或掩模开口的堵塞。