公开(公告)号：US08350278B2

公开(公告)日：2013-01-08

申请号：US12950747

申请日：2010-11-19

申请人： Satoshi Komada

发明人： Satoshi Komada

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/382 ,  H01L33/22 ,  H01L33/46

摘要： A nitride semiconductor light-emitting device includes an n type nitride semiconductor layer, a light-emitting layer formed on the n type nitride semiconductor layer, a first p type nitride semiconductor layer formed on the light-emitting layer, an intermediate layer formed on the first p type nitride semiconductor layer to alternately cover and expose a surface of the first p type nitride semiconductor layer, and a second p type nitride semiconductor layer formed on the intermediate layer. The intermediate layer is made of a compound containing Si and N as constituent elements.

摘要翻译： 氮化物半导体发光器件包括n型氮化物半导体层，形成在n型氮化物半导体层上的发光层，形成在发光层上的第一p型氮化物半导体层，形成在该氮化物半导体层上的中间层 第一p型氮化物半导体层，交替地覆盖和暴露第一p型氮化物半导体层的表面，以及形成在中间层上的第二p型氮化物半导体层。 中间层由含有Si和N作为构成元素的化合物制成。

公开(公告)号：US08211726B2

公开(公告)日：2012-07-03

申请号：US11707058

申请日：2007-02-16

申请人： Satoshi Komada ,  Mayuko Fudeta

发明人： Satoshi Komada ,  Mayuko Fudeta

IPC分类号： H01L21/20

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01S5/0217 ,  H01S5/0422 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04

摘要： An object is to provide a method of manufacturing a nitride semiconductor light emitting device having high light emission output and allowing decrease in forward voltage (Vf). The invention is directed to a method of manufacturing a nitride semiconductor light emitting device including at least an n-type nitride semiconductor, a p-type nitride semiconductor and an active layer formed between the n-type nitride semiconductor and the p-type nitride semiconductor, wherein the n-type nitride semiconductor includes at least an n-type contact layer and an n-side GaN layer, the n-side GaN layer consists of a single or a plurality of undoped and/or n-type layers, and the method includes the step of forming the n-side GaN layer by organic metal vapor deposition with the growth temperature set within the range of 500 to 1000° C., such that the n-side GaN layer is formed between the n-type contact layer and the active layer.

摘要翻译： 本发明的目的是提供一种制造具有高发光输出并允许正向电压（Vf）降低的氮化物半导体发光器件的方法。 本发明涉及一种制造氮化物半导体发光器件的方法，所述氮化物半导体发光器件至少包括形成在n型氮化物半导体和p型氮化物半导体之间的n型氮化物半导体，p型氮化物半导体和有源层 其中，所述n型氮化物半导体至少包括n型接触层和n侧GaN层，所述n侧GaN层由单个或多个未掺杂的和/或n型层构成， 方法包括通过有机金属气相沉积形成n侧GaN层的步骤，其生长温度设定在500至1000℃的范围内，使得n侧GaN层形成在n型接触层 和活性层。

公开(公告)号：US20080241983A1

公开(公告)日：2008-10-02

申请号：US12073393

申请日：2008-03-05

申请人： Satoshi Komada ,  Atsushi Ogawa ,  Hiroki Takaoka

发明人： Satoshi Komada ,  Atsushi Ogawa ,  Hiroki Takaoka

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

摘要： Provided is a method of manufacturing a nitride semiconductor light-emitting device including the step of contacting a surfactant material with the surface of an n-type nitride semiconductor layer or the surface of a p-type nitride semiconductor layer before the growth of an active layer, or, with a grown crystal surface during or after the growth of the active layer. According to this manufacturing method, a nitride semiconductor light-emitting device having higher light-emitting efficiency can be obtained.

摘要翻译： 提供一种制造氮化物半导体发光器件的方法，其包括在活性层生长之前使表面活性剂材料与n型氮化物半导体层的表面或p型氮化物半导体层的表面接触的步骤 ，或者在活性层生长期间或之后具有生长的晶体表面。 根据该制造方法，可以获得具有较高发光效率的氮化物半导体发光器件。

公开(公告)号：US08084764B2

公开(公告)日：2011-12-27

申请号：US12076812

申请日：2008-03-24

申请人： Satoshi Komada

发明人： Satoshi Komada

IPC分类号： H01L29/06

CPC分类号： H01L33/02 ,  H01L33/04 ,  H01L33/32

摘要： The present invention is a semiconductor light emitting device including an n-type semiconductor layer, an active layer, a first p-type semiconductor layer between the n-type semiconductor layer and the active layer, and a second p-type semiconductor layer on the opposite side of the first p-type semiconductor layer from the active layer. Further, the present invention is a nitride semiconductor light emitting device including an n-type nitride semiconductor layer, a nitride semiconductor active layer, a first p-type nitride semiconductor layer between the n-type nitride semiconductor layer and the nitride semiconductor active layer, and a second p-type nitride semiconductor layer on the opposite side of the first p-type nitride semiconductor layer from the nitride semiconductor active layer.

摘要翻译： 本发明是一种半导体发光器件，其包括在n型半导体层和有源层之间的n型半导体层，有源层，第一p型半导体层和第二p型半导体层， 第一p型半导体层与有源层相对的一侧。 此外，本发明是一种氮化物半导体发光器件，其包括在n型氮化物半导体层和氮化物半导体有源层之间的n型氮化物半导体层，氮化物半导体有源层，第一p型氮化物半导体层， 以及与所述氮化物半导体活性层在所述第一p型氮化物半导体层相反一侧的第二p型氮化物半导体层。

公开(公告)号：US07893446B2

公开(公告)日：2011-02-22

申请号：US12022066

申请日：2008-01-29

申请人： Atsushi Ogawa ,  Akio Aioi ,  Satoshi Komada ,  Hiroshi Nakatsu

发明人： Atsushi Ogawa ,  Akio Aioi ,  Satoshi Komada ,  Hiroshi Nakatsu

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/14 ,  H01L33/32

摘要： A nitride semiconductor light-emitting device comprises a substrate, and a first n-type nitride semiconductor layer, an emission layer, a p-type nitride semiconductor layer, a metal layer and a second n-type nitride semiconductor layer stacked on the substrate successively from the side closer to the substrate, with an electrode provided on the surface of the second n-type nitride semiconductor layer or above the surface of the second n-type nitride semiconductor layer. The metal layer is preferably made of a hydrogen-storage alloy.

摘要翻译： 氮化物半导体发光器件包括基板和第一n型氮化物半导体层，发射层，p型氮化物半导体层，金属层和第二n型氮化物半导体层， 具有设置在第二n型氮化物半导体层的表面上或者在第二n型氮化物半导体层的表面上方的电极。 金属层优选由储氢合金制成。

公开(公告)号：US20080217646A1

公开(公告)日：2008-09-11

申请号：US12073215

申请日：2008-03-03

申请人： Satoshi Komada

发明人： Satoshi Komada

IPC分类号： H01L33/00

CPC分类号： H01L33/04 ,  H01L33/025

摘要： The present invention presents a nitride semiconductor light emitting device including a substrate, a first n-type nitride semiconductor layer, a light emitting layer, a p-type nitride semiconductor layer, a p-type nitride semiconductor tunnel junction layer, an n-type nitride semiconductor tunnel junction layer, and a second n-type semiconductor layer, in which the p-type and n-type nitride semiconductor tunnel junction layers form a tunnel junction, at least one of the p-type and n-type nitride semiconductor tunnel junction layers contains In, at least one of In-containing layers contacts with a layer having a larger band gap than the In-containing layer, and at least one of shortest distances between an interface of the In-containing layer and the layer having a larger band gap and an interface of the p-type and n-type nitride semiconductor tunnel junction layers is less than 40 nm.

摘要翻译： 本发明提供一种氮化物半导体发光器件，其包括衬底，第一n型氮化物半导体层，发光层，p型氮化物半导体层，p型氮化物半导体隧道结层，n型 氮化物半导体隧道结层和第二n型半导体层，其中p型和n型氮化物半导体隧道结层形成隧道结，p型和n型氮化物半导体隧道中的至少一种 接合层包含In，所述含In层中的至少一个与具有比所述含In层更大的带隙的层接触，并且所述含In层的界面与所述含有层的层之间的最短距离中的至少一个 较大的带隙和p型和n型氮化物半导体隧道结层的界面小于40nm。

公开(公告)号：US20060223330A1

公开(公告)日：2006-10-05

申请号：US11378767

申请日：2006-03-17

申请人： Mayuko Fudeta ,  Satoshi Komada

发明人： Mayuko Fudeta ,  Satoshi Komada

IPC分类号： H01L21/302

CPC分类号： H01L21/2007 ,  H01L21/78 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095

摘要： A method of manufacturing a nitride semiconductor device includes the steps of forming a groove on a surface of a first substrate by scribing, and forming a nitride semiconductor layer on the surface where the groove is formed. In addition, the method includes the steps of bonding the nitride semiconductor layer and a second substrate together and separating the nitride semiconductor layer and the first substrate from each other. With this manufacturing method, a nitride semiconductor device can be obtained with high yield.

摘要翻译： 制造氮化物半导体器件的方法包括以下步骤：通过划线在第一衬底的表面上形成沟槽，并在形成沟槽的表面上形成氮化物半导体层。 此外，该方法包括将氮化物半导体层和第二衬底接合在一起并将氮化物半导体层和第一衬底彼此分离的步骤。 利用该制造方法，可以高产率获得氮化物半导体器件。

公开(公告)号：US09030089B2

公开(公告)日：2015-05-12

申请号：US13676978

申请日：2012-11-14

申请人： Satoshi Komada ,  Katsuyuki Konishi

发明人： Satoshi Komada ,  Katsuyuki Konishi

IPC分类号： F21V9/16 ,  F21V9/02 ,  A01G7/04 ,  H05B33/08 ,  H01L25/075 ,  H01L33/50

CPC分类号： F21V9/30 ,  A01G7/045 ,  F21V9/02 ,  H01L25/0753 ,  H01L33/502 ,  H01L33/504 ,  H01L2924/0002 ,  H05B33/0857 ,  H05B33/0872 ,  Y02P60/149 ,  H01L2924/00

摘要： A lighting device for growing a plant includes: not less than two sorts of semiconductor light-emitting element, each having a peak emission wavelength in a range of 380 nm to 500 nm, the not less than two sorts of semiconductor light-emitting element being different from each other in peak emission wavelength by not less than 5 nm; and a red fluorescent material which (i) is excited by light of at least one of the not less than two sorts of semiconductor light-emitting element and (ii) has a peak emission wavelength in a range of 600 nm to 780 nm.

摘要翻译： 用于生长植物的照明装置包括：不低于两种半导体发光元件，每个半导体发光元件的峰值发射波长在380nm至500nm的范围内，不少于两种半导体发光元件为 峰发射波长彼此不同，不小于5nm; 和（i）由不少于两种半导体发光元件中的至少一种的光激发的红色荧光材料和（ii）具有600nm至780nm范围内的峰值发射波长。

公开(公告)号：US08659041B2

公开(公告)日：2014-02-25

申请号：US12755926

申请日：2010-04-07

申请人： Satoshi Komada

发明人： Satoshi Komada

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/06

摘要： A nitride semiconductor light emitting diode includes at least an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer. The active layer is formed of one first nitride semiconductor layer having a highest In ratio in the light emitting diode. The light emitting diode further includes at least one of a second nitride semiconductor layer located between the active layer and the n-type nitride semiconductor layer and including an InGaN layer, and a third nitride semiconductor layer located between the active layer and the p-type nitride semiconductor layer and including an InGaN layer. Respective In (Indium) ratios of the InGaN layers included in the second nitride semiconductor layer and the InGaN layers included in the third nitride semiconductor layer are lower than the In ratio of the first nitride semiconductor layer forming the active layer. The LED with high luminous efficiency can thus be provided.

摘要翻译： 氮化物半导体发光二极管至少包括n型氮化物半导体层，有源层和p型氮化物半导体层。 有源层由发光二极管中具有最高In比的一个第一氮化物半导体层形成。 发光二极管还包括位于有源层和n型氮化物半导体层之间并且包括InGaN层的第二氮化物半导体层中的至少一个以及位于有源层和p型之间的第三氮化物半导体层 氮化物半导体层并且包括InGaN层。 包含在第二氮化物半导体层中的InGaN层和包含在第三氮化物半导体层中的InGaN层的In（In）比低于形成有源层的第一氮化物半导体层的In比。 因此可以提供高发光效率的LED。

公开(公告)号：US07858414B2

公开(公告)日：2010-12-28

申请号：US11378767

申请日：2006-03-17

申请人： Mayuko Fudeta ,  Satoshi Komada

发明人： Mayuko Fudeta ,  Satoshi Komada

IPC分类号： H01L21/00

CPC分类号： H01L21/2007 ,  H01L21/78 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095

摘要： A method of manufacturing a nitride semiconductor device includes the steps of forming a groove on a surface of a first substrate by scribing, and forming a nitride semiconductor layer on the surface where the groove is formed. In addition, the method includes the steps of bonding the nitride semiconductor layer and a second substrate together and separating the nitride semiconductor layer and the first substrate from each other. With this manufacturing method, a nitride semiconductor device can be obtained with high yield.

摘要翻译： 制造氮化物半导体器件的方法包括以下步骤：通过划线在第一衬底的表面上形成沟槽，并在形成沟槽的表面上形成氮化物半导体层。 此外，该方法包括将氮化物半导体层和第二衬底接合在一起并将氮化物半导体层和第一衬底彼此分离的步骤。 利用该制造方法，可以高产率获得氮化物半导体器件。