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公开(公告)号:US20120261799A1
公开(公告)日:2012-10-18
申请号:US13538121
申请日:2012-06-29
申请人: Satoshi SASAKI , Yasunari UMEMOTO , Yasuo OSONE , Tsutomu KOBORI , Chushiro KUSANO , Isao OHBU , Kenji SASAKI
发明人: Satoshi SASAKI , Yasunari UMEMOTO , Yasuo OSONE , Tsutomu KOBORI , Chushiro KUSANO , Isao OHBU , Kenji SASAKI
IPC分类号: H01L27/04
CPC分类号: H01L29/7304 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/042 , H01L27/0605 , H01L27/067 , H01L28/40 , H01L29/0808 , H01L29/7371 , H01L2223/6627 , H01L2223/6644 , H01L2224/05553 , H01L2224/05554 , H01L2224/32225 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48227 , H01L2224/48235 , H01L2224/49113 , H01L2224/49171 , H01L2224/73265 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01037 , H01L2924/01041 , H01L2924/01042 , H01L2924/01049 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/10336 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/1423 , H01L2924/19032 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/30105 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2224/45099
摘要: A technology which allows a reduction in the thermal resistance of a semiconductor device used in a radio communication device, and the miniaturization thereof is provided. For example, the semiconductor device can include a plurality of unit transistors Q, transistor formation regions 3a, 3b, and 3e each having a first number (e.g., seven) of the unit transistors Q, and transistor formation regions 3c and 3d each having a second number (e.g., four) of the unit transistors Q. The transistor formation regions 3c and 3d are located between the transistor formation regions 3a, 3b, 3e, and 3f, and the first number is larger than the second number.
摘要翻译: 提供了允许降低无线电通信装置中使用的半导体装置的热阻的技术及其小型化。 例如,半导体器件可以包括多个单位晶体管Q,具有单位晶体管Q的第一数量(例如7个)的晶体管形成区域3a,3b和3e以及每个具有单位晶体管Q的晶体管形成区域3c和3d 晶体管形成区域3c和3d位于晶体管形成区域3a,3b,3e和3f之间,第一数量大于第二数量。
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公开(公告)号:US20100109052A1
公开(公告)日:2010-05-06
申请号:US12608751
申请日:2009-10-29
申请人: Shizuki NAKAJIMA , Hiroyuki NAGAI , Yuji SHIRAI , Hirokazu NAKEJIMA , Chushiro KUSANO , Yu HASEGAWA , Chiko YORITA , Yasuo OSONE
发明人: Shizuki NAKAJIMA , Hiroyuki NAGAI , Yuji SHIRAI , Hirokazu NAKEJIMA , Chushiro KUSANO , Yu HASEGAWA , Chiko YORITA , Yasuo OSONE
IPC分类号: H01L27/082 , H01L27/088 , H01L21/8222 , H01L29/78
CPC分类号: H01L29/7835 , H01L21/823425 , H01L21/823475 , H01L23/66 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/17 , H01L24/28 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/16 , H01L27/088 , H01L29/04 , H01L29/0692 , H01L29/0847 , H01L29/0878 , H01L29/1087 , H01L29/41758 , H01L29/66659 , H01L29/7371 , H01L2223/6644 , H01L2223/6677 , H01L2224/0401 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05171 , H01L2224/05553 , H01L2224/05644 , H01L2224/05666 , H01L2224/1134 , H01L2224/13099 , H01L2224/13144 , H01L2224/16225 , H01L2224/16235 , H01L2224/291 , H01L2224/29111 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/73265 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/04941 , H01L2924/10161 , H01L2924/10329 , H01L2924/10336 , H01L2924/12041 , H01L2924/1305 , H01L2924/1306 , H01L2924/13064 , H01L2924/13091 , H01L2924/14 , H01L2924/1517 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/30105 , H01L2924/3011 , H01L2924/30111 , H05K1/0206 , H05K2201/09481 , H05K2201/096 , H05K2201/10674 , H01L2924/00 , H01L2924/01028 , H01L2924/01032 , H01L2924/01083 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2924/013
摘要: In a semiconductor chip in which LDMOSFET elements for power amplifier circuits used for a power amplifier module are formed, a source bump electrode is disposed on an LDMOSFET formation region in which a plurality of source regions, a plurality of drain regions and a plurality of gate electrodes for the LDMOSFET elements are formed. The source bump electrode is formed on a source pad mainly made of aluminum via a source conductor layer which is thicker than the source pad and mainly made of copper. No resin film is interposed between the source bump electrode and the source conductor layer.
摘要翻译: 在其中形成用于功率放大器模块的功率放大器电路的LDMOSFET元件形成的半导体芯片中,源极突起电极设置在LDMOSFET形成区域中,其中多个源极区域,多个漏极区域和多个栅极 形成用于LDMOSFET元件的电极。 源极突起电极通过源极导体层形成在主要由铝制成的源极焊盘上,该源极导体层比源焊盘厚,主要由铜制成。 在源凸起电极和源极导体层之间不设置树脂膜。
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公开(公告)号:US20140183730A1
公开(公告)日:2014-07-03
申请号:US14199078
申请日:2014-03-06
申请人: Nae HISANO , Shigeo OHASHI , Yasuo OSONE , Yasuhiro NAKA , Hiroyuki TENMEI , Kunihiko NISHI , Hiroaki IKEDA , Masakazu ISHINO , Hideharu MIYAKE , Shiro UCHIYAMA
发明人: Nae HISANO , Shigeo OHASHI , Yasuo OSONE , Yasuhiro NAKA , Hiroyuki TENMEI , Kunihiko NISHI , Hiroaki IKEDA , Masakazu ISHINO , Hideharu MIYAKE , Shiro UCHIYAMA
CPC分类号: H01L24/14 , H01L23/3128 , H01L23/34 , H01L23/473 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2225/06565 , H01L2924/1461 , H01L2924/15311 , H01L2924/15321 , H01L2924/181 , H01L2924/18161 , H01L2924/00
摘要: A semiconductor device comprises a mounting substrate, a semiconductor element provided above said mounting substrate, a package substrate provided above said mounting substrate with said semiconductor element therebetween and electrically connected to said semiconductor element via a primary connecting bump, a liquid cooling module cooling said semiconductor element by a liquid refrigerant, in which a heat receiving section of the liquid cooling module is disposed between said semiconductor element and said mounting substrate, and a plurality of secondary connecting bumps provided between said package substrate and said mounting substrate.
摘要翻译: 半导体器件包括安装基板,设置在所述安装基板上方的半导体元件,设置在所述安装基板上方的封装基板,其间具有所述半导体元件,并通过主连接凸块与所述半导体元件电连接;冷却所述半导体 液体制冷剂的热接收部分设置在所述半导体元件和所述安装基板之间,以及设置在所述封装基板和所述安装基板之间的多个次级连接凸块。
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公开(公告)号:US20100171213A1
公开(公告)日:2010-07-08
申请号:US12683085
申请日:2010-01-06
申请人: Nae HISANO , Shigeo OHASHI , Yasuo OSONE , Yasuhiro NAKA , Hiroyuki TENMEI , Kunihiko NISHI , Hiroaki IKEDA , Masakazu ISHINO , Hideharu MIYAKE , Shiro UCHIYAMA
发明人: Nae HISANO , Shigeo OHASHI , Yasuo OSONE , Yasuhiro NAKA , Hiroyuki TENMEI , Kunihiko NISHI , Hiroaki IKEDA , Masakazu ISHINO , Hideharu MIYAKE , Shiro UCHIYAMA
IPC分类号: H01L23/473 , H01L23/488 , F28F7/00
CPC分类号: H01L24/14 , H01L23/3128 , H01L23/34 , H01L23/473 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2225/06565 , H01L2924/1461 , H01L2924/15311 , H01L2924/15321 , H01L2924/181 , H01L2924/18161 , H01L2924/00
摘要: A semiconductor device comprises a mounting substrate, a semiconductor element provided above said mounting substrate, a package substrate provided above said mounting substrate with said semiconductor element therebetween and electrically connected to said semiconductor element via a primary connecting bump, a liquid cooling module cooling said semiconductor element by a liquid refrigerant, in which a heat receiving section of the liquid cooling module is disposed between said semiconductor element and said mounting substrate, and a plurality of secondary connecting bumps provided between said package substrate and said mounting substrate.
摘要翻译: 半导体器件包括安装基板,设置在所述安装基板上方的半导体元件,设置在所述安装基板上方的封装基板,其间具有所述半导体元件,并通过主连接凸块与所述半导体元件电连接;冷却所述半导体 液体制冷剂的热接收部分设置在所述半导体元件和所述安装基板之间,以及设置在所述封装基板和所述安装基板之间的多个次级连接凸块。
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