摘要:
In a model-based OPC which makes a suitable mask correction for each mask pattern using an optical image intensity simulator, a mask pattern is divided into subregions and the model of optical image intensity simulation is changed according to the contents of the pattern in each subregion. When the minimum dimensions of the mask pattern are smaller than a specific threshold value set near the exposure wavelength, the region is calculated using a high-accuracy model and the other regions are calculated using a high-speed model.
摘要:
To provide a pattern forming method comprising: laminating a resist layer on a substrate; forming a diffraction pattern having an opening opened at a predetermined pitch p for diffracting exposure light on an upper layer side of the resist layer; performing whole image exposure with respect to the diffraction pattern in which a refractive index with respect to the exposure light is n, with diffracted light acquired by irradiation of exposure light having a wavelength λ from above the diffraction pattern, which is then diffracted by the diffraction pattern; and forming a desired pattern on a lower layer side of the resist pattern by using a resist pattern formed by developing the resist layer, wherein the predetermined pitch p, the wavelength λ, and the refractive index n satisfy a condition of p>λ/n.
摘要:
A lithography simulation method for estimating an optical image to be formed on a substrate when a mask pattern is transferred onto the substrate includes dividing the mask pattern into first calculation areas having sizes determined by a range affected by OPC, the range being obtained correspondingly to an exposure wavelength, a numerical aperture and an illumination shape which are used in the transferring the mask pattern onto the substrate, dividing the each of the first calculation areas into second calculation areas, calculating first electromagnetic field distributions formed by illuminating the mask pattern with exposure light and corresponding to the second calculation areas, obtaining second electromagnetic field distributions corresponding to the first calculation areas by synthesizing the first electromagnetic field distributions for each of the first calculation areas, and calculating the optical image to be formed on the substrate by using the second electromagnetic field distributions.
摘要:
A lithography simulation method for estimating an optical image to be formed on a substrate when a mask pattern is transferred onto the substrate includes dividing the mask pattern into first calculation areas having sizes determined by a range affected by OPC, the range being obtained correspondingly to an exposure wavelength, a numerical aperture and an illumination shape which are used in the transferring the mask pattern onto the substrate, dividing the each of the first calculation areas into second calculation areas, calculating first electromagnetic field distributions formed by illuminating the mask pattern with exposure light and corresponding to the second calculation areas, obtaining second electromagnetic field distributions corresponding to the first calculation areas by synthesizing the first electromagnetic field distributions for each of the first calculation areas, and calculating the optical image to be formed on the substrate by using the second electromagnetic field distributions.
摘要:
A phase shift mask having a plurality of mask patterns or mask data thereof is prepared, and an overlapped focus range in each of the mask patterns in a case where a result of exposure to each of the mask patterns, obtained by an exposure experiment or a lithography simulation, meets a desired dimension is obtained. A digging depth is determined at discretion based on the obtained overlapped focus range.
摘要:
A method of simulating an optical intensity distribution on a substrate when a mask pattern formed on the mask is transferred to the substrate through a projection optical system by irradiating an illumination light obliquely on a mask surface of the mask, which comprises setting a phase difference between a zero-order diffraction light and a first-order diffraction light determined according to at least one of a distance between the zero-order diffraction light and the first-order diffraction light on a pupil of the projection optical system, thickness of a light-shielding portion formed on the mask, angle defined by an optical axis direction of the illumination light and an incident direction on the mask, and a difference between a size of the mask pattern and a half cycle of the mask pattern, and carrying out a simulation of the optical intensity distribution on the substrate according to the set phase difference.
摘要:
A method of simulating an optical intensity distribution on a substrate when a mask pattern formed on the mask is transferred to the substrate through a projection optical system by irradiating an illumination light obliquely on a mask surface of the mask, which comprises setting a phase difference between a zero-order diffraction light and a first-order diffraction light determined according to at least one of a distance between the zero-order diffraction light and the first-order diffraction light on a pupil of the projection optical system, thickness of a light-shielding portion formed on the mask, angle defined by an optical axis direction of the illumination light and an incident direction on the mask, and a difference between a size of the mask pattern and a half cycle of the mask pattern, and carrying out a simulation of the optical intensity distribution on the substrate according to the set phase difference.
摘要:
An exposure method includes the phase-shifting mask supply step, the phase-shifting mask being prepared by selectively forming a light-shielding portion and a phase shifter on a substrate, and the resist exposure step of performing both exposure of a resist by dark field illumination light and exposure of the resist by bright field illumination light by using the phase-shifting mask, thereby removing residual resist generated by the influence of the edge of the phase shifter.
摘要:
An exposure method includes the phase-shifting mask supply step, the phase-shifting mask being prepared by selectively forming a light-shielding portion and a phase shifter on a substrate, and the resist exposure step of performing both exposure of a resist by dark field illumination light and exposure of the resist by bright field illumination light by using the phase-shifting mask, thereby removing residual resist generated by the influence of the edge of the phase shifter.
摘要:
In the invention, a first processor that controls operation of a predetermined controlled unit and a second processor are operated in a first mode, a second mode, and a third mode, in the first mode the first processor and second processor are operable respectively, in the second mode respective amounts of power supplied to the first and second processors are lower than that in the first mode, in the third mode respective amounts of power supplied to the first and second processors are an amount between that in the first mode and that in the second mode and at least the predetermined controlled unit is operable, and in the second mode, the first processor puts a process related to the first processor before a process related to the second processor until the second mode is transited to the third mode.