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公开(公告)号：US4987851A
公开(公告)日：1991-01-29
申请号：US292314
申请日：1988-12-30
IPC分类号： B05D1/20
摘要： An organic film forming apparatus includes a trough storing water therein and a work drive device for moving a work with respect to the trough. The surface of the water is partitioned by a rod into a first developing region on which a monomolecular film is developed and a second developing region on which no monomolecular film is developed. The work is moved by the device through the developed monomolecular film so as to adhere the film on the surface of the work. The device has a holding mechanism which has a holding portion engaged with the work, and which holds the work so that when the work passes through the developed monomolecular film, the holding portion is away from the film or passes through the film after almost the entire work passes through the film.
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公开(公告)号：US08007964B2
公开(公告)日：2011-08-30
申请号：US12709116
申请日：2010-02-19
申请人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
发明人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
IPC分类号： G03F1/00
摘要： A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.
摘要翻译： 用作光掩模材料的光掩模坯料设置有对透明基板上的曝光光具有透明区域和有效不透明区域的掩模图案。 在透明板上，形成有一层或多层遮光膜，其中有或没有其它膜（A），构成遮光膜的至少一层（B）包括硅和过渡金属作为主要成分，以及 硅与过渡金属的摩尔比为硅：金属= 4-15:1（原子比）。 还提供了具有掩模图案的光掩模，该掩模图案具有透明区域和透明板上曝光光线的有效不透明区域。
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公开(公告)号：US07771893B2
公开(公告)日：2010-08-10
申请号：US11489477
申请日：2006-07-20
申请人： Hiroki Yoshikawa , Hiroshi Kubota , Yoshinori Kinase , Satoshi Okazaki , Tamotsu Maruyama , Takashi Haraguchi , Masahide Iwakata , Yuichi Fukushima , Tadashi Saga
发明人： Hiroki Yoshikawa , Hiroshi Kubota , Yoshinori Kinase , Satoshi Okazaki , Tamotsu Maruyama , Takashi Haraguchi , Masahide Iwakata , Yuichi Fukushima , Tadashi Saga
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/46 , G03F1/54 , G03F1/58 , Y10T428/24917 , Y10T428/31616
摘要： A light-shielding film for exposure light is formed on one principal plane of a transparent substrate made of quartz or the like that serves as a photomask substrate. The light-shielding film can serve not only as the so-called “light-shielding film” but also as an anti-reflection film. In addition, the light-shielding film has a total thickness of 100 nm or less, 70% or more of which is accounted for by the thickness of a chromium compound that has an optical density (OD) per unit thickness of 0.025 nm−1 for light having a wavelength of 450 nm. In the case where the photomask blank is used for fabricating a mask designed for ArF exposure, the thickness and composition of the light-shielding film are selected in such a manner that the OD of the light-shielding film is 1.2 to 2.3 for 193 or 248 nm wavelength light.
摘要翻译： 在作为光掩模基板的石英等的透明基板的一个主面上形成曝光用遮光膜。 遮光膜不仅可以用作所谓的“遮光膜”，而且可以用作抗反射膜。 此外，遮光膜的总厚度为100nm以下，其中70％以上的铬化合物的厚度为0.025nm-1，每单位厚度的光密度（OD） 对于波长为450nm的光。 在光掩模坯料用于制造用于ArF曝光的掩模的情况下，遮光膜的厚度和组成选择为使得遮光膜的OD为193或193的屏蔽膜的OD为1.2至2.3 248 nm波长的光。
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公开(公告)号：US20100143831A1
公开(公告)日：2010-06-10
申请号：US12709116
申请日：2010-02-19
申请人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
发明人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
IPC分类号： G03F1/00
摘要： A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.
摘要翻译： 用作光掩模材料的光掩模坯料设置有对透明基板上的曝光光具有透明区域和有效不透明区域的掩模图案。 在透明板上，形成有一层或多层遮光膜，其中有或没有其它膜（A），构成遮光膜的至少一层（B）包括硅和过渡金属作为主要成分，以及 硅与过渡金属的摩尔比为硅：金属= 4-15:1（原子比）。 还提供了具有掩模图案的光掩模，该掩模图案具有透明区域和透明板上曝光光线的有效不透明区域。
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公开(公告)号：US20070259276A1
公开(公告)日：2007-11-08
申请号：US11662479
申请日：2005-08-10
申请人： Hiroki Yoshikawa , Yukio Inazuki , Yoshinori Kinase , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
发明人： Hiroki Yoshikawa , Yukio Inazuki , Yoshinori Kinase , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
IPC分类号： G03F1/08 , C23F4/00 , G03F1/14 , H01L21/027
摘要： A metal film is provided as a light shielding layer on one principle surface of a photomask substrate. The metal film cannot be substantially etched by chlorine-based dry etching containing oxygen ((Cl+O)-based dry etching) and can be etched by chlorine-based dry etching not containing oxygen (Cl-based dry etching) and fluorine-based dry etching (F-based dry etching). On the light shielding layer, a metal compound film as an antireflective layer. The metal compound film cannot be substantially etched by chlorine-based dry etching not containing oxygen (Cl based) and can be etched by at least one of chlorine-based dry etching containing oxygen ((Cl+O) based) and fluorine-based dry etching (F based).
摘要翻译： 在光掩模基板的一个主表面上设置金属膜作为遮光层。 通过含有氧（（Cl + O）基干蚀刻）的基于氯的干蚀刻，不能基本上蚀刻金属膜，并且可以通过不含氧的氯基干法蚀刻（基于Cl的干蚀刻）和氟基 干蚀刻（F-干蚀刻）。 在遮光层上，作为抗反射层的金属化合物膜。 金属化合物膜不能通过不含氧（Cl基）的氯基干蚀刻基本上被蚀刻，并且可以通过含氧（（Cl + O）基）的氯基干蚀刻和氟基干法中的至少一种进行蚀刻 蚀刻（基于F）。
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公开(公告)号：US20070212618A1
公开(公告)日：2007-09-13
申请号：US11715346
申请日：2007-03-08
申请人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yosuke Kojima , Kazuaki Chiba , Yuichi Fukushima
发明人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yosuke Kojima , Kazuaki Chiba , Yuichi Fukushima
摘要： A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
摘要翻译： 提供一种光掩模坯料，其包括设置在透明基板上的耐蚀刻干蚀刻和通过氯干蚀刻除去的蚀刻停止膜，设置在蚀刻停止膜上的遮光膜，并且包括至少一层由 过渡金属/硅材料和设置在遮光膜上的抗反射膜。 当光屏蔽膜被干蚀刻以形成图案时，由图案密度依赖性引起的图案尺寸变化减小，使得以高精度产生光掩模。
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7.发明申请Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method 有权半色调相移掩模空白，半色调相移掩模和图案转移方法公开(公告)号：US20050244722A1
公开(公告)日：2005-11-03
申请号：US11093295
申请日：2005-03-30
申请人： Kimihiro Okada , Masahide Iwakata , Takashi Haraguchi , Mikio Takagi , Yuichi Fukushima , Hiroki Yoshikawa , Toshinobu Ishihara , Satoshi Okazaki , Yukio Inazuki , Tadashi Saga
发明人： Kimihiro Okada , Masahide Iwakata , Takashi Haraguchi , Mikio Takagi , Yuichi Fukushima , Hiroki Yoshikawa , Toshinobu Ishihara , Satoshi Okazaki , Yukio Inazuki , Tadashi Saga
CPC分类号： G03F1/32 , Y10T428/31616
摘要： In a halftone phase shift mask blank comprising a substrate, a light absorbing film, and a phase shifter film, the light absorbing film contains a metal element of Group 4A in a distribution having a higher metal element content in an upper region than in a lower region. Also provided is a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film of a single layer or multiple layers having a preselected phase difference and transmittance, wherein at least one layer of the halftone phase shift film contains at least 90 atom % of silicon and a plurality of metal elements, typically Mo and Zr or Hf.
摘要翻译： 在包括基板，光吸收膜和移相膜的半色调相移掩模坯料中，光吸收膜在上部区域中具有比在下部的金属元素含量高的分布中的4A族金属元素 地区。 还提供了一种半色调相移掩模坯料，其包括透明基板和具有预选相位差和透射率的单层或多层的半色调相移膜，其中至少一层半色调相移膜含有至少90个原子 硅和多个金属元素，通常为Mo和Zr或Hf。
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公开(公告)号：US20050217988A1
公开(公告)日：2005-10-06
申请号：US11093297
申请日：2005-03-30
申请人： Hiroki Yoshikawa , Toshinobu Ishihara , Satoshi Okazaki , Yukio Inazuki , Tadashi Saga , Kimihiro Okada , Masahide Iwakata , Takashi Haraguchi , Yuichi Fukushima
发明人： Hiroki Yoshikawa , Toshinobu Ishihara , Satoshi Okazaki , Yukio Inazuki , Tadashi Saga , Kimihiro Okada , Masahide Iwakata , Takashi Haraguchi , Yuichi Fukushima
CPC分类号： G03F1/32 , C23C14/06 , C23C14/3414 , C23C14/3464
摘要： For the manufacture of a halftone phase shift mask blank comprising a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film comprising Si, Mo and Zr at the same time, a target comprising at least Zr and Mo in a molar ratio Zr/Mo between 0.05 and 5 is useful.
摘要翻译： 为了制造包括透明基板和具有受控相位和透射率的一层或多层的半透明膜的半色调相移掩模坯料，同时至少一层包括Si，Mo和Zr的半透明膜， 包含Zr和Mo的摩尔比在0.05和5之间的至少Zr和Mo是有用的。
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9.发明申请GROWTH FACTOR ANCHORING TYPE BONE GRAFT MATERIAL, METHOD FOR PRODUCING GROWTH FACTOR ANCHORING TYPE BONE GRAFT MATERIAL, KIT FOR PRODUCING GROWTH FACTOR ANCHORING TYPE BONE GRAFT MATERIAL, AND METHOD FOR FORMING BONE 有权生长因子锚定型骨质量材料，生产生长因子锚定型骨质材料的方法，用于生产生长因子锚定型骨折材料的工具，以及用于形成骨的方法公开(公告)号：US20140335146A1
公开(公告)日：2014-11-13
申请号：US14117599
申请日：2012-03-26
申请人： Kentaro Uchida , Koji Naruse , Masashi Takaso , Takehiko Mima , Osamu Matsushita , Takashi Haraguchi , Nozomu Nishi
发明人： Kentaro Uchida , Koji Naruse , Masashi Takaso , Takehiko Mima , Osamu Matsushita , Takashi Haraguchi , Nozomu Nishi
CPC分类号： A61K38/1825 , A61K38/1808 , A61K38/4886 , A61L27/3608 , A61L27/54 , A61L2300/252 , A61L2300/414 , A61L2430/02 , C07K14/33 , C07K14/485 , C07K2319/00 , C07K2319/03 , C07K2319/70 , C12N9/52
摘要： Provided is a growth factor anchoring type bone graft material, wherein a bone graft substrate exposing at least a collagen fiber is bound to a collagen-binding-site-containing growth factor which contains a growth factor receptor agonist peptide and a collagen-binding peptide. The same can be produced by mixing a bone graft substrate and a collagen-binding-site-containing growth factor which contains a growth factor receptor agonist peptide and a collagen-binding peptide, and is also superior in osteogenic ability.
摘要翻译： 提供了一种生长因子锚定型骨移植材料，其中暴露至少胶原纤维的骨移植基质与含有生长因子受体激动剂肽和胶原结合肽的含胶原结合位点的生长因子结合。 通过混合骨移植基质和含有生长因子受体激动剂肽和胶原结合肽的含有胶原结合位点的生长因子，也可以产生同样的效果，并且成骨能力也优异。
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公开(公告)号：US07989124B2
公开(公告)日：2011-08-02
申请号：US12820908
申请日：2010-06-22
申请人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yosuke Kojima , Kazuaki Chiba , Yuichi Fukushima
发明人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yosuke Kojima , Kazuaki Chiba , Yuichi Fukushima
IPC分类号： G03F1/00
摘要： A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
摘要翻译： 光掩模坯料包括透明基板，沉积在基板上并包含易受氟干蚀刻影响的金属或金属化合物的遮光膜，以及沉积在遮光膜上并包含另一金属或金属化合物的蚀刻掩模膜 到氟干蚀刻。 当光屏蔽膜被干蚀刻以形成图案时，由图案密度依赖性引起的图案尺寸变化减小，使得以高精度产生光掩模。
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