CHARGED PARTICLE BEAM APPARATUS
    1.
    发明申请
    CHARGED PARTICLE BEAM APPARATUS 审中-公开
    充电颗粒光束装置

    公开(公告)号:US20080067376A1

    公开(公告)日:2008-03-20

    申请号:US11751094

    申请日:2007-05-21

    IPC分类号: G21K7/00

    摘要: This invention provides a charged particle beam apparatus that can makes reduction in off axis aberration and separate detection of secondary beams to be compatible. The charged particle beam apparatus has: an electron optics that forms a plurality of primary charged particle beams, projects them on a specimen, and makes them scan the specimen with a first deflector; a plurality of detectors that individually detect a plurality of secondary charged particle beams produced from the plurality of locations of the specimen by irradiation of the plurality of primary charged particle beams; and a voltage source for applying a voltage to the specimen. The charged particle beam apparatus further has: a Wien filter for separating paths of the primary charged particle beams and paths of the secondary charged particle beams; a second deflector for deflecting the secondary charged particle beams separated by the Wien filter; and control means for controlling the first deflector and the second deflector in synchronization, wherein the plurality of detectors detect the plurality of secondary charged particle beams separated by the Wien filter individually.

    摘要翻译: 本发明提供了一种带电粒子束装置,其可以减少离轴像差和将次级束的分离检测兼容。 带电粒子束装置具有:形成多个初级带电粒子束的电子光学器件,将它们投射在样本上,并使它们用第一偏转器扫描样本; 多个检测器,通过多个初级带电粒子束的照射,分别检测从样本的多个位置产生的多个次级带电粒子束; 以及用于向样本施加电压的电压源。 带电粒子束装置还具有:维纳滤波器,用于分离初级带电粒子束的路径和二次带电粒子束的路径; 用于偏转由维恩滤波器分离的二次带电粒子束的第二偏转器; 以及用于同步地控制第一偏转器和第二偏转器的控制装置,其中多个检测器分别检测由维恩过滤器分离的多个次级带电粒子束。

    Method of charged particle beam lithography and equipment for charged particle beam lithography
    2.
    发明申请
    Method of charged particle beam lithography and equipment for charged particle beam lithography 有权
    带电粒子束光刻方法及带电粒子束光刻设备

    公开(公告)号:US20050072941A1

    公开(公告)日:2005-04-07

    申请号:US10958141

    申请日:2004-10-05

    摘要: Disclosed is equipment for charged-particle beam lithography capable of executing exposure even when an electron beam with a bad property is produced due to a failure in some multibeam forming element, without replacing the failing multibeam forming element and without reducing the exposure accuracy. The equipment includes means for forming a plurality of charged-particle beams arranged at predetermined intervals; a plurality of blankers which act on the plurality of charged-particle beams individually; a common blanker which acts on all of the plurality of charged-particle beams; and a blanking restriction for causing those charged-particle beams which are given predetermined deflection by the plurality of blankers to reach onto a sample, with a signal applied to the common blanker, and blocking those charged-particle beams which are not given the predetermined deflection by the plurality of blankers to the sample. The equipment blocks beams with bad properties to the sample and executes exposure using only those beams which have bad properties.

    摘要翻译: 本发明公开了即使由于某些多波束形成元件的故障而产生具有不良特性的电子束也能够进行曝光的带电粒子束光刻设备,而不更换故障多波束形成元件而不降低曝光精度。 该设备包括用于形成以预定间隔布置的多个带电粒子束的装置; 分别作用在多个带电粒子束上的多个阻挡器; 作用于所有多个带电粒子束的常见消隐器; 以及消隐限制,用于使得由多个消隐器给予预定偏转的那些带电粒子束到达样本,信号施加到公共消隐器,并且阻挡未被给予预定偏转的那些带电粒子束 通过多个消隐器到样品。 设备阻挡样品性能不良的光束,并仅使用具有不良特性的光束执行曝光。

    Method of charged particle beam lithography and equipment for charged particle beam lithography
    3.
    发明授权
    Method of charged particle beam lithography and equipment for charged particle beam lithography 有权
    带电粒子束光刻方法及带电粒子束光刻设备

    公开(公告)号:US07105842B2

    公开(公告)日:2006-09-12

    申请号:US10958141

    申请日:2004-10-05

    IPC分类号: H01J37/302 G03F7/20

    摘要: Disclosed is equipment for charged-particle beam lithography capable of executing exposure even when an electron beam with a bad property is produced due to a failure in some multibeam forming element, without replacing the failing multibeam forming element and without reducing the exposure accuracy. The equipment includes means for forming a plurality of charged-particle beams arranged at predetermined intervals; a plurality of blankers which act on the plurality of charged-particle beams individually; a common blanker which acts on all of the plurality of charged-particle beams; and a blanking restriction for causing those charged-particle beams which are given predetermined deflection by the plurality of blankers to reach onto a sample, with a signal applied to the common blanker, and blocking those charged-particle beams which are not given the predetermined deflection by the plurality of blankers to the sample. The equipment blocks beams with bad properties to the sample and executes exposure using only those beams which have bad properties.

    摘要翻译: 本发明公开了即使由于某些多波束形成元件的故障而产生具有不良特性的电子束也能够进行曝光的带电粒子束光刻设备,而不更换故障多波束形成元件而不降低曝光精度。 该设备包括用于形成以预定间隔布置的多个带电粒子束的装置; 分别作用在多个带电粒子束上的多个阻挡器; 作用于所有多个带电粒子束的常见消隐器; 以及消隐限制,用于使得由多个消隐器给予预定偏转的那些带电粒子束到达样本,信号施加到公共消隐器,并且阻挡未被给予预定偏转的那些带电粒子束 通过多个消隐器到样品。 设备阻挡样品性能不良的光束,并仅使用具有不良特性的光束执行曝光。

    Electron beam writing equipment and electron beam writing method
    4.
    发明授权
    Electron beam writing equipment and electron beam writing method 有权
    电子束写入设备和电子束写入方法

    公开(公告)号:US07098464B2

    公开(公告)日:2006-08-29

    申请号:US10957695

    申请日:2004-10-05

    IPC分类号: H01J37/304

    摘要: The present invention provides a writing technique which can perform high-accuracy overlay writing in electron beam writing equipment performing mark detection by light.Electron beam writing equipment has an electron source; an electron optical system illuminating an electron beam emitted from the electron source onto a sample for scanning to form a desired pattern on the sample; a stage mounting the sample; a mark substrate provided on the stage; means beaming a light beam for position detection which is on the same side as the illumination direction of the electron beam for illuminating the mark substrate; light detection means which is on the same side as the means beaming a light beam for detecting reflected light reflected on the mark substrate; and electron detection means which is on the side opposite the light detection means with respect to the mark substrate for detecting a transmitted electron obtained by illumination of the electron beam onto the mark substrate, wherein relative position information of the light beam and the electron beam is obtained based on the signals of the detected reflected light and transmitted electron.

    摘要翻译: 本发明提供了一种写入技术,其能够通过光执行标记检测的电子束写入设备中执行高精度重叠写入。 电子束写入设备具有电子源; 电子光学系统将从电子源发射的电子束照射到样品上以进行扫描以在样品上形成所需图案; 安装样品的阶段; 设置在台上的标记基板; 意味着将用于位置检测的光束照射在与用于照射标记基板的电子束的照射方向相同的一侧; 光检测装置与发出用于检测在标记基板上反射的反射光的光束相同的一侧; 以及电子检测装置,其相对于用于检测通过将电子束照射到标记基板上而获得的透射电子的标记基板在与光检测装置相反的一侧,其中光束和电子束的相对位置信息为 基于检测到的反射光和透射电子的信号获得。

    Electron beam writing equipment and electron beam writing method
    5.
    发明申请
    Electron beam writing equipment and electron beam writing method 有权
    电子束写入设备和电子束写入方法

    公开(公告)号:US20050072939A1

    公开(公告)日:2005-04-07

    申请号:US10957695

    申请日:2004-10-05

    摘要: The present invention provides a writing technique which can perform high-accuracy overlay writing in electron beam writing equipment performing mark detection by light. Electron beam writing equipment has an electron source; an electron optical system illuminating an electron beam emitted from the electron source onto a sample for scanning to form a desired pattern on the sample; a stage mounting the sample; a mark substrate provided on the stage; means beaming a light beam for position detection which is on the same side as the illumination direction of the electron beam for illuminating the mark substrate; light detection means which is on the same side as the means beaming a light beam for detecting reflected light reflected on the mark substrate; and electron detection means which is on the side opposite the light detection means with respect to the mark substrate for detecting a transmitted electron obtained by illumination of the electron beam onto the mark substrate, wherein relative position information of the light beam and the electron beam is obtained based on the signals of the detected reflected light and transmitted electron.

    摘要翻译: 本发明提供了一种写入技术,其能够通过光执行标记检测的电子束写入设备中执行高精度重叠写入。 电子束写入设备具有电子源; 电子光学系统将从电子源发射的电子束照射到样品上以进行扫描以在样品上形成所需图案; 安装样品的阶段; 设置在台上的标记基板; 意味着将用于位置检测的光束照射在与用于照射标记基板的电子束的照射方向相同的一侧; 光检测装置与发出用于检测在标记基板上反射的反射光的光束相同的一侧; 以及电子检测装置,其相对于用于检测通过将电子束照射到标记基板上而获得的透射电子的标记基板在与光检测装置相反的一侧,其中光束和电子束的相对位置信息为 基于检测到的反射光和透射电子的信号获得。

    Electron beam writing equipment and electron beam writing method
    7.
    发明授权
    Electron beam writing equipment and electron beam writing method 有权
    电子束写入设备和电子束写入方法

    公开(公告)号:US07049607B2

    公开(公告)日:2006-05-23

    申请号:US10951769

    申请日:2004-09-29

    IPC分类号: G01N23/00

    摘要: Electron beam writing equipment has an electron source and an electron optics system for scanning an electron beam emitted from the electron source on a sample via deflection means having at least two different deflection speeds. An objective lens is used to form a desired pattern on the sample The electron beam is moved by high speed scanning with the deflection means to repeat formation of a patterned beam. The electron beam is moved on the mark for beam correction by low speed scanning with the deflection means in synchronization with one cycle of the repetition. The position or the deflection distance of the electron beam or blanking time is corrected using detectors for back scattered or secondary electrons.

    摘要翻译: 电子束写入设备具有电子源和电子光学系统,用于通过具有至少两个不同偏转速度的偏转装置扫描从电子源在样品上发射的电子束。 使用物镜在样品上形成期望的图案电子束通过用偏转装置的高速扫描移动,以重复形成图案化的束。 电子束通过与偏转装置的低速扫描同步于重复的一个周期而在标记上移动以进行光束校正。 使用用于背散射或二次电子的检测器校正电子束的位置或偏转距离或消隐时间。

    Electron beam writing equipment and electron beam writing method
    8.
    发明申请
    Electron beam writing equipment and electron beam writing method 有权
    电子束写入设备和电子束写入方法

    公开(公告)号:US20050040343A1

    公开(公告)日:2005-02-24

    申请号:US10951769

    申请日:2004-09-29

    摘要: Electron beam writing equipment has an electron source and an electron optics system for scanning an electron beam emitted from the electron source on a sample via deflection means having at least two different deflection speeds. An objective lens is used to form a desired pattern on the sample The electron beam is moved by high speed scanning with the deflection means to repeat formation of a patterned beam. The electron beam is moved on the mark for beam correction by low speed scanning with the deflection means in synchronization with one cycle of the repetition. The position or the deflection distance of the electron beam or blanking time is corrected using detectors for back scattered or secondary electrons.

    摘要翻译: 电子束写入设备具有电子源和电子光学系统,用于通过具有至少两个不同偏转速度的偏转装置扫描从电子源在样品上发射的电子束。 使用物镜在样品上形成期望的图案电子束通过用偏转装置的高速扫描移动,以重复形成图案化的束。 电子束通过与偏转装置的低速扫描同步于重复的一个周期而在标记上移动以进行光束校正。 使用用于背散射或二次电子的检测器校正电子束的位置或偏转距离或消隐时间。

    Electron beam writing equipment and electron beam writing method
    9.
    发明授权
    Electron beam writing equipment and electron beam writing method 失效
    电子束写入设备和电子束写入方法

    公开(公告)号:US06809319B2

    公开(公告)日:2004-10-26

    申请号:US10629567

    申请日:2003-07-30

    IPC分类号: H01J3728

    摘要: Electron beam writing equipment has an electron source and an electron optics system for scanning an electron beam emitted from the electron source on a sample via deflection means having at least two different deflection speeds. An objective lens is used to form a desired pattern on the sample. The electron beam is moved by high speed scanning with the deflection means to repeat formation of a patterned beam. The electron beam is moved on the mark for beam correction by low speed scanning with the deflection means in synchronization with one cycle of the repetition. The position or the deflection distance of the electron beam or blanking time is corrected using detectors for back scattered or secondary electrons.

    摘要翻译: 电子束写入设备具有电子源和电子光学系统,用于通过具有至少两个不同偏转速度的偏转装置扫描从电子源在样品上发射的电子束。 物镜用于在样品上形成所需的图案。 用偏转装置通过高速扫描来移动电子束以重复形成图案化的束。 电子束通过与偏转装置的低速扫描同步于重复的一个周期而在标记上移动以进行光束校正。 使用用于背散射或二次电子的检测器校正电子束的位置或偏转距离或消隐时间。

    Method and apparatus for applying charged particle beam
    10.
    发明申请
    Method and apparatus for applying charged particle beam 有权
    用于施加带电粒子束的方法和装置

    公开(公告)号:US20060289781A1

    公开(公告)日:2006-12-28

    申请号:US11475014

    申请日:2006-06-27

    IPC分类号: H01J3/14 G21K1/08

    摘要: In a charged particle beam applying apparatus such as an electron beams lithography system, there is a technology that facilitates positional adjustment of a crossover and improves throughput of the apparatus. A front focal plane of a condenser lens is provided with a sharp end face (crossover regulation edge) for regulating the height of the crossover on a beam axis. By using the crossover regulation edge to measure the shape of an electron beam, the shape of the beam on the front focal plane of the condenser lens can be always checked even if the height of the crossover formed by an electron gun or the resistance of a source forming lens is changed.

    摘要翻译: 在诸如电子束光刻系统的带电粒子束施加装置中,存在促进交叉的位置调整并提高装置的生产量的技术。 聚光透镜的前焦平面设置有用于调节光束轴上的交叉点的高度的尖端(交叉调节边缘)。 通过使用交叉调节边缘来测量电子束的形状,即使电子枪形成的交叉点的高度或电子枪的电阻,也可以始终检查聚光透镜的前焦平面上的光束的形状 源形成透镜改变。