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    Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies
    7.
    发明申请
    Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies 审中-公开
    微波频率下非晶半导体的等离子体沉积

    公开(公告)号：US20120115274A1

    公开(公告)日：2012-05-10

    申请号：US13355541

    申请日：2012-01-22

    申请人： Stanford R Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

    发明人： Stanford R Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

    IPC分类号： H01L31/18

    CPC分类号： C23C16/511 ,  C23C16/24 ,  C23C16/545 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262

    摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus inhibits deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

    摘要翻译： 微波等离子体沉积薄膜光伏材料的设备和方法。 该装置抑制在将微波能量耦合到沉积物质的窗口或其它微波传输元件上的沉积。 该装置包括带有通过其的导管的微波施加器，其携带沉积物质。 施加器将微波能量传递到沉积物质以将它们转变成有助于形成薄膜材料的反应状态。 导管物理隔离在微波功率传递点反应以形成薄膜材料的沉积物质。 沉积物质分开通电并从功率传递点扫除，以防止薄膜沉积。 本发明允许超快速地形成显示高迁移率，低孔隙率，很少或没有Staebler-Wronski降解和低缺陷浓度的含硅非晶半导体。