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公开(公告)号:US20080230830A1
公开(公告)日:2008-09-25
申请号:US12052914
申请日:2008-03-21
申请人: Se Jun KIM , Eun Seok CHOI , Kyoung Hwan PARK , Hyun Seung YOO , Myung Shik LEE , Young Ok HONG , Jung Ryul AHN , Yong Top KIM , Kyung Pil HWANG , Won Sic WOO , Jae Young PARK , Ki Hong LEE , Ki Seon PARK , Moon Sig JOO
发明人: Se Jun KIM , Eun Seok CHOI , Kyoung Hwan PARK , Hyun Seung YOO , Myung Shik LEE , Young Ok HONG , Jung Ryul AHN , Yong Top KIM , Kyung Pil HWANG , Won Sic WOO , Jae Young PARK , Ki Hong LEE , Ki Seon PARK , Moon Sig JOO
IPC分类号: H01L29/792 , H01L21/28 , H01L21/762
CPC分类号: H01L29/513 , H01L27/105 , H01L27/11568 , H01L27/11573 , H01L29/792
摘要: A nonvolatile memory device and a method of fabricating the same is provided to prevent charges stored in a charge trap layer from moving to neighboring memory cells. The method of fabricating a nonvolatile memory device, includes forming a first dielectric layer on a semiconductor substrate in which active regions are defined by isolation layers, forming a charge trap layer on the first dielectric layer, removing the first dielectric layer and the charge trap layer over the isolation layers, forming a second dielectric layer on the isolation layers including the charge trap layer, and forming a conductive layer on the second dielectric layer.
摘要翻译: 提供了一种非易失性存储器件及其制造方法,以防止存储在电荷陷阱层中的电荷移动到相邻存储器单元。 制造非易失性存储器件的方法包括在半导体衬底上形成第一电介质层,其中有源区由隔离层限定,在第一电介质层上形成电荷陷阱层,去除第一介电层和电荷陷阱层 在隔离层上,在包括电荷陷阱层的隔离层上形成第二电介质层,并在第二介电层上形成导电层。
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公开(公告)号:US20110204430A1
公开(公告)日:2011-08-25
申请号:US13097479
申请日:2011-04-29
申请人: Se Jun KIM , Eun Seok CHOI , Kyoung Hwan PARK , Hyun Seung YOO , Myung Shik LEE , Young Ok HONG , Jung Ryul AHN , Yong Top KIM , Kyung Pil HWANG , Won Sic WOO , Jae Young PARK , Ki Hong LEE , Ki Seon PARK , Moon Sig JOO
发明人: Se Jun KIM , Eun Seok CHOI , Kyoung Hwan PARK , Hyun Seung YOO , Myung Shik LEE , Young Ok HONG , Jung Ryul AHN , Yong Top KIM , Kyung Pil HWANG , Won Sic WOO , Jae Young PARK , Ki Hong LEE , Ki Seon PARK , Moon Sig JOO
IPC分类号: H01L29/792 , B82Y99/00
CPC分类号: H01L29/513 , H01L27/105 , H01L27/11568 , H01L27/11573 , H01L29/792
摘要: A nonvolatile memory device and a method of fabricating the same is provided to prevent charges stored in a charge trap layer from moving to neighboring memory cells. The method of fabricating a nonvolatile memory device, includes forming a first dielectric layer on a semiconductor substrate in which active regions are defined by isolation layers, forming a charge trap layer on the first dielectric layer, removing the first dielectric layer and the charge trap layer over the isolation layers, forming a second dielectric layer on the isolation layers including the charge trap layer, and forming a conductive layer on the second dielectric layer.
摘要翻译: 提供了一种非易失性存储器件及其制造方法,以防止存储在电荷陷阱层中的电荷移动到相邻存储器单元。 制造非易失性存储器件的方法包括在半导体衬底上形成第一电介质层,其中有源区由隔离层限定,在第一电介质层上形成电荷陷阱层,去除第一介电层和电荷陷阱层 在隔离层上,在包括电荷陷阱层的隔离层上形成第二电介质层,并在第二介电层上形成导电层。
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公开(公告)号:US20090003055A1
公开(公告)日:2009-01-01
申请号:US11966451
申请日:2007-12-28
申请人: Kyung Pil HWANG
发明人: Kyung Pil HWANG
IPC分类号: G11C16/06
CPC分类号: G11C11/5628 , G11C16/3454 , G11C2211/5621
摘要: A method for programming an MLC flash memory device minimizes interference between adjacent cells during a program operation, such that threshold voltage distribution becomes narrow and uniform. According to the method, an auxiliary program operation is performed on memory cells to be programmed, such that a majority of the memory cells have a positive threshold voltage. An LSB of a particular memory cell is programmed to a predetermined level, and data of the programmed LSB is sensed. An MSB of the particular memory cell is programmed to a predetermined level according to the sensed data of the LSB.
摘要翻译: 用于编程MLC闪速存储器件的方法在编程操作期间最小化相邻单元之间的干扰,使得阈值电压分布变窄和均匀。 根据该方法,对要编程的存储器单元执行辅助编程操作,使得大多数存储器单元具有正的阈值电压。 特定存储单元的LSB被编程到预定电平,并且感测编程的LSB的数据。 特定存储器单元的MSB根据LSB的感测数据被编程到预定的电平。
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