公开(公告)号：US20080153179A1

公开(公告)日：2008-06-26

申请号：US12073098

申请日：2008-02-29

申请人： Se-Chung OH ,  Jang-Eun LEE ,  Jun-Soo BAE ,  Hyun-Jo KIM ,  Kyung-Tae NAM ,  Young-Ki HA

发明人： Se-Chung OH ,  Jang-Eun LEE ,  Jun-Soo BAE ,  Hyun-Jo KIM ,  Kyung-Tae NAM ,  Young-Ki HA

IPC分类号： H01L21/00

CPC分类号： G11C11/16 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12 ,  Y10T29/49034 ,  Y10T29/49044

摘要： Example embodiments of the present invention disclose a semiconductor memory device and a method of forming a memory device. A semiconductor memory device may include a digit line disposed on a substrate, an intermediate insulating layer covering the digit line, a magnetic tunnel junction (MTJ) pattern disposed on the intermediate insulating layer and over the digit line, the MTJ pattern including a sequentially stacked lower magnetic pattern, upper magnetic pattern, and capping pattern, wherein the capping pattern does not react with the upper magnetic pattern at a temperature above about 280° C., and a bit line connected to the capping pattern and disposed to intersect the digit line. A method of forming a semiconductor memory device may include forming a digit line on a substrate, forming an intermediate insulating layer covering the digit line, forming a magnetic tunnel junction (MTJ) pattern on the intermediate insulating layer, the MTJ pattern including a sequentially stacked lower magnetic pattern, upper magnetic pattern, and capping pattern, wherein the capping pattern does not react with the upper magnetic pattern at a temperature above about 280° C., performing an annealing operation at a temperature of about 350° C. or higher, and forming a bit line connected to the capping pattern and disposed to intersect the digit line.

公开(公告)号：US20070041243A1

公开(公告)日：2007-02-22

申请号：US11465075

申请日：2006-08-16

申请人： Jun-Soo BAE ,  Jang-Eun LEE ,  Hyun-Jo KIM ,  Se-Chung OH ,  Kyung-Tae NAM

发明人： Jun-Soo BAE ,  Jang-Eun LEE ,  Hyun-Jo KIM ,  Se-Chung OH ,  Kyung-Tae NAM

IPC分类号： G11C11/00

CPC分类号： G11C11/15 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3281 ,  H01F41/302 ,  H01L43/08

摘要： There is provided a magnetic memory device and a method of forming the same. The magnetic memory device includes an invariable pinning pattern and a variable pinning pattern on a substrate. A tunnel barrier pattern is interposed between the invariable pinning pattern and the variable pinning pattern, and the pinned pattern is interposed between the invariable pinning pattern and the tunnel barrier pattern. A storage free pattern is interposed between the tunnel barrier pattern and the variable pinning pattern, and a guide free pattern is interposed between the storage free pattern and the variable pinning pattern. A free reversing pattern is interposed between the storage and guide free patterns. The free reversing pattern reverses a magnetization direction of the storage free pattern and a magnetization direction of the guide free pattern in the opposite directions.

摘要翻译： 提供了一种磁存储器件及其形成方法。 磁存储器件在衬底上包括不变的钉扎图案和可变的钉扎图案。 在不变的钉扎图案和可变钉扎图案之间插入隧道势垒图案，并且钉扎图案介于不变钉扎图案和隧道屏障图案之间。 在隧道势垒图案和可变钉扎图案之间插入无存储图案，并且在存储空闲图案和可变钉扎图案之间插入无引导图案。 在存储和无引导模式之间插入一个自由的反转模式。 自由反转图案反转无存储图案的磁化方向和反向自由图案的磁化方向。

公开(公告)号：US20070041125A1

公开(公告)日：2007-02-22

申请号：US11552085

申请日：2006-10-23

申请人： Young-Ki HA ,  Jang-Eun LEE ,  Hyun-Jo KIM ,  Se-Chung OH ,  Jun-Soo BAE ,  In-Gyu BAEK

发明人： Young-Ki HA ,  Jang-Eun LEE ,  Hyun-Jo KIM ,  Se-Chung OH ,  Jun-Soo BAE ,  In-Gyu BAEK

IPC分类号： G11B5/17

CPC分类号： H01L43/12 ,  H01L43/08

摘要： There are provided a magnetic tunnel junction structure and a method of fabricating the same. The magnetic tunnel junction structure includes a lower electrode, a lower magnetic layer pattern and a tunnel layer pattern, which are sequentially formed on the lower electrode. The magnetic tunnel junction structure further includes an upper magnetic layer pattern, a buffer layer pattern, and an upper electrode, which are sequentially formed on a portion of the tunnel layer pattern. The sidewall of the upper magnetic layer pattern is surrounded by an oxidized upper magnetic layer, and the sidewall of the buffer layer pattern is surrounded by an oxidized buffer layer. The depletion of the upper magnetic layer pattern and the lower magnetic layer pattern in the magnetic tunnel junction region can be prevented by the oxidized buffer layer.

摘要翻译： 提供了一种磁性隧道结结构及其制造方法。 磁性隧道结结构包括依次形成在下电极上的下电极，下磁层图案和隧道层图案。 磁隧道结结构还包括依次形成在隧道层图案的一部分上的上磁层图案，缓冲层图案和上电极。 上部磁性层图案的侧壁由氧化的上部磁性层包围，缓冲层图案的侧壁由氧化的缓冲层包围。 可以通过氧化缓冲层来防止磁性隧道结区域中上部磁性层图案和下部磁性层图案的消耗。

公开(公告)号：US20120292724A1

公开(公告)日：2012-11-22

申请号：US13475520

申请日：2012-05-18

申请人： Woo-Chang LIM ,  Jang-Eun LEE ,  Se-Chung OH ,  Woo-Jin KIM ,  Young-Hyun KIM ,  Jeong-Heon PARK

发明人： Woo-Chang LIM ,  Jang-Eun LEE ,  Se-Chung OH ,  Woo-Jin KIM ,  Young-Hyun KIM ,  Jeong-Heon PARK

IPC分类号： H01L29/82

CPC分类号： H01L43/08

摘要： A magnetic tunnel junction element is provided. The magnetic tunnel junction element has first magnetic layer and second magnetic layer formed adjacent, e.g., on lower and upper portions of an insulating layer, respectively and each having a perpendicular magnetic anisotropy, a magnetic field adjustment layer formed on the second magnetic layer and having a perpendicular magnetic anisotropy, and a bather layer formed between the magnetic field adjustment layer and the second magnetic layer. The second magnetic layer and the magnetic field adjustment layer are magnetically decoupled from each other.

摘要翻译： 提供磁性隧道结元件。 磁性隧道结元件分别具有第一磁性层和第二磁性层，该第一磁性层和第二磁性层分别形成在例如绝缘层的下部和上部上并且各自具有垂直的磁各向异性，磁场调节层形成在第二磁性层上并具有 垂直磁各向异性，以及形成在磁场调整层和第二磁性层之间的沐浴层。 第二磁性层和磁场调节层彼此磁耦合。

公开(公告)号：US20120135543A1

公开(公告)日：2012-05-31

申请号：US13286630

申请日：2011-11-01

申请人： Hee-Ju SHIN ,  Jun-Ho JEONG ,  Jang-Eun LEE ,  Se-Chung OH

发明人： Hee-Ju SHIN ,  Jun-Ho JEONG ,  Jang-Eun LEE ,  Se-Chung OH

IPC分类号： H01L43/12

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L27/228

摘要： A method of fabricating a magnetic tunnel junction structure includes forming a magnetic tunnel junction layer on a substrate. A mask pattern is formed on a region of the second magnetic layer. A magnetic tunnel junction layer pattern and a sidewall dielectric layer pattern on at least one sidewall of the magnetic tunnel junction layer pattern are formed by performing at least one etch process and at least one oxidation process multiple times. The at least one etch process may include a first etch process to etch a portion of the magnetic tunnel junction layer using an inert gas and the mask pattern to form a first etch product. The at least one oxidation process may include a first oxidation process to oxidize the first etch product attached on an etched side of the magnetic tunnel junction layer.

摘要翻译： 制造磁性隧道结结构的方法包括在衬底上形成磁性隧道结层。 在第二磁性层的区域上形成掩模图案。 通过多次执行至少一个蚀刻工艺和至少一个氧化工艺来形成在磁性隧道结层图案的至少一个侧壁上的磁性隧道结层图案和侧壁电介质层图案。 所述至少一个蚀刻工艺可以包括使用惰性气体蚀刻磁性隧道结层的一部分并且掩模图案以形成第一蚀刻产物的第一蚀刻工艺。 所述至少一个氧化工艺可以包括第一氧化工艺以氧化附着在磁性隧道结层的蚀刻侧上的第一蚀刻产物。

公开(公告)号：US20130044538A1

公开(公告)日：2013-02-21

申请号：US13586976

申请日：2012-08-16

申请人： Hyung-Rok OH ,  Se-Chung OH

发明人： Hyung-Rok OH ,  Se-Chung OH

IPC分类号： H01L29/82 ,  G11C11/16

CPC分类号： G11C11/16 ,  G11C11/1653 ,  G11C11/1659 ,  H01L25/0657 ,  H01L25/18 ,  H01L27/0688 ,  H01L27/1052 ,  H01L27/11286 ,  H01L27/224 ,  H01L27/228 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a stacked magnetic random access memory (MRAM) in which memory cell arrays having various characteristics or functions are included in memory cell layers. The stacked MRAM device includes a semiconductor substrate and at least one memory cell layers. The semiconductor substrate includes a first memory cell array. Each of the memory cell layers includes a memory cell array having a different function from the first memory cell array and is stacked on the first memory cell array. As a result, the stacked MRAM device has high density, high performance, and high reliability.

摘要翻译： 提供了一种堆叠磁性随机存取存储器（MRAM），其中具有各种特性或功能的存储单元阵列被包括在存储单元层中。 层叠MRAM器件包括半导体衬底和至少一个存储单元层。 半导体衬底包括第一存储单元阵列。 每个存储单元层包括具有与第一存储单元阵列不同的功能并且堆叠在第一存储单元阵列上的存储单元阵列。 结果，堆叠的MRAM器件具有高密度，高性能和高可靠性。

公开(公告)号：US20170084822A1

公开(公告)日：2017-03-23

申请号：US15169775

申请日：2016-06-01

申请人： Ki-Woong KIM ,  Ju-Hyun KIM ,  Yong-Sung PARK ,  Se-Chung OH ,  Joon-Myoung LEE

发明人： Ki-Woong KIM ,  Ju-Hyun KIM ,  Yong-Sung PARK ,  Se-Chung OH ,  Joon-Myoung LEE

IPC分类号： H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

CPC分类号： H01L43/10 ,  H01L27/224 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： A magnetic memory device includes a substrate, a circuit device on the substrate, a lower electrode electrically connected to the circuit device, a magnetic tunnel junction structure (MTJ structure) on the lower electrode, and an upper electrode on the MTJ structure. The MTJ structure includes a pinned layer structure including at least one crystalline ferromagnetic layer and at least one amorphous ferromagnetic layer, a free layer, and a tunnel barrier layer between the pinned layer structure and the free layer.

公开(公告)号：US20180073131A1

公开(公告)日：2018-03-15

申请号：US15629793

申请日：2017-06-22

申请人： Joon-Myoung LEE ,  Yong-Sung PARK ,  Whan-Kyun KIM ,  Se-Chung OH ,  Young-Man JANG

发明人： Joon-Myoung LEE ,  Yong-Sung PARK ,  Whan-Kyun KIM ,  Se-Chung OH ,  Young-Man JANG

IPC分类号： C23C14/34 ,  H01J37/32 ,  C23C16/455

CPC分类号： C23C14/34 ,  C23C14/0036 ,  C23C14/0063 ,  C23C14/0068 ,  C23C14/08 ,  C23C14/541 ,  C23C14/566 ,  C23C16/45563 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32724 ,  H01J37/34

摘要： A substrate processing apparatus including a chamber accommodating a substrate; a substrate support in the chamber, the substrate support supporting the substrate; a gas injector to inject an oxidizing gas for oxidizing a metal layer to be disposed on the substrate; a cooler under the substrate to cool the substrate; a target mount disposed on the substrate, the target mount including a target for performing a sputtering process; and a blocker between the target and the gas injector, the blocker shielding the target from the oxidizing gas injected from the gas injector.