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    SINGLE-GRAIN NEAR-FIELD TRANSDUCER AND PROCESS FOR FORMING SAME
    2.
    发明申请
    SINGLE-GRAIN NEAR-FIELD TRANSDUCER AND PROCESS FOR FORMING SAME 有权

    公开(公告)号：US20220366934A1

    公开(公告)日：2022-11-17

    申请号：US17877434

    申请日：2022-07-29

    Applicant: Seagate Technology LLC.

    Inventor： Michael Christopher Kautzky ,  Tong Zhao ,  Li Wan ,  Xiaolu Kou

    IPC: G11B5/31 ,  H01L33/00 ,  C30B25/04 ,  G11B5/105 ,  G11B5/127 ,  G11B7/124 ,  G11B5/84

    Abstract: A method comprises forming a single-crystal-like metal layer on a metal seed layer, the metal seed layer formed on a carrier wafer. The method comprises forming a first bonding layer on the single-crystal-like metal layer. The method also comprises forming a second bonding layer on a dielectric layer of a target substrate, the target substrate comprising one or more recording head subassemblies. The bonding layers may include diffusion layers or dielectric bonding layers. The method further comprises flipping and joining the carrier wafer with the target substrate such that the first and second diffusion layers are bonded and the single-crystal-like metal layer is integrated with the recording head as a near-field transducer.

    NEAR FIELD TRANSDUCERS (NFTS) AND METHODS OF FORMING NFTS
    5.
    发明申请
    NEAR FIELD TRANSDUCERS (NFTS) AND METHODS OF FORMING NFTS 审中-公开

    公开(公告)号：US20200224307A1

    公开(公告)日：2020-07-16

    申请号：US16726512

    申请日：2019-12-24

    Applicant: Seagate Technology LLC

    Inventor： Tong Zhao ,  Michael C. Kautzky ,  Sarbeswar Sahoo ,  Justin Brons ,  Jie Gong ,  Yuhang Cheng

    IPC: C23C14/58 ,  G11B5/31

    Abstract: Devices having an air bearing surface (ABS), the device including a near field transducer, the near field transducer having a peg and a disc, the peg having a region adjacent the ABS, the peg including a plasmonic material selected from gold (Au), silver (Ag), copper (Cu), ruthenium (Ru), rhodium (Rh), aluminum (Al), or combinations thereof; and at least one other secondary atom selected from germanium (Ge), tellurium (Te), aluminum (Al), antimony (Sb), tin (Sn), mercury (Hg), indium (In), zinc (Zn), iron (Fe), copper (Cu), manganese (Mn), silver (Ag), chromium (Cr), cobalt (Co), and combinations thereof, wherein a concentration of the secondary atom is higher at the region of the peg adjacent the ABS than a concentration of the secondary atom throughout the bulk of the peg. Methods of forming NFTs are also disclosed.

    DEVICES INCLUDING AT LEAST ONE MULTILAYER ADHESION LAYER
    7.
    发明申请
    DEVICES INCLUDING AT LEAST ONE MULTILAYER ADHESION LAYER 审中-公开

    公开(公告)号：US20190051319A1

    公开(公告)日：2019-02-14

    申请号：US16160661

    申请日：2018-10-15

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Justin Brons ,  Tong Zhao ,  Yuhang Cheng ,  Dimitar V. Dimitrov

    IPC: G11B5/31 ,  G11B5/00

    CPC classification number: G11B5/314 ,  G11B5/3133 ,  G11B2005/0021

    Abstract: Devices that include a near field transducer (NFT), the NFT having at least one external surface; and at least one multilayer adhesion layer positioned on at least a portion of the at least one external surface, the multilayer adhesion layer including a first layer and a second layer, with the second layer being in contact with the portion of the at least one external surface of the NFT, the first layer including: yttrium (Y), scandium (Sc), zirconium (Zr), hafnium (Hf), silicon (Si), boron (B), tantalum (Ta), barium (Ba), aluminum (Al), titanium (Ti), niobium (Nb), calcium (Ca), beryllium (Be), strontium (Sr), magnesium (Mg), lithium (Li), or combinations thereof; and the second layer including: lanthanum (La), boron (B), lutetium (Lu), aluminum (Al), deuterium (D), cerium (Ce), uranium (U), praseodymium (Pr), yttrium (Y), silicon (Si), iridium (Ir), carbon (C), thorium (Th), scandium (Sc), titanium (Ti), vanadium (V), phosphorus (P), barium (Ba), europium (Eu), or combinations thereof.

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