Tunneling magneto-resistive sensors with buffer layers
    5.
    发明授权
    Tunneling magneto-resistive sensors with buffer layers 有权
    隧道磁阻传感器与缓冲层

    公开(公告)号:US09082958B2

    公开(公告)日:2015-07-14

    申请号:US14568645

    申请日:2014-12-12

    IPC分类号: G11B5/39 H01L43/08 H01L43/02

    摘要: In certain embodiments, a tunneling magneto-resistive (TMR) sensor includes a sensor stack positioned between a seed layer and a cap layer. The seed layer includes a first buffer layer that includes a non-magnetic nickel alloy. In certain embodiments, a sensor stack includes a top and bottom shield and a seed layer positioned adjacent to the bottom shield. The seed layer has a first buffer layer that includes a nickel alloy.

    摘要翻译: 在某些实施例中,隧道磁阻(TMR)传感器包括位于种子层和覆盖层之间的传感器堆叠。 种子层包括包含非磁性镍合金的第一缓冲层。 在某些实施例中,传感器堆叠包括顶部和底部屏蔽以及邻近底部屏蔽定位的种子层。 种子层具有包括镍合金的第一缓冲层。

    THIN FILMS HAVING LARGE TEMPERATURE COEFFICIENT OF RESISTANCE AND METHODS OF FABRICATING SAME
    6.
    发明申请
    THIN FILMS HAVING LARGE TEMPERATURE COEFFICIENT OF RESISTANCE AND METHODS OF FABRICATING SAME 有权
    具有较大温度系数的薄膜及其制造方法

    公开(公告)号:US20140146856A1

    公开(公告)日:2014-05-29

    申请号:US13687445

    申请日:2012-11-28

    IPC分类号: G01K7/16 C23C14/06

    摘要: An apparatus comprises a head transducer and a resistive temperature sensor provided on the head transducer. The resistive temperature sensor comprises a first layer comprising a conductive material and having a temperature coefficient of resistance (TCR) and a second layer comprising at least one of a specular layer and a seed layer. A method is disclosed to fabricate such sensor with a laminated thin film structure to achieve a large TCR. The thicknesses of various layers in the laminated thin film are in the range of few to a few tens of nanometers. The combinations of the deliberately optimized multilayer thin film structures and the fabrication of such films at the elevated temperatures are disclosed to obtain the large TCR.

    摘要翻译: 一种装置包括头部换能器和设置在头部换能器上的电阻式温度传感器。 电阻温度传感器包括包含导电材料并具有温度系数电阻(TCR)的第一层和包括镜面层和晶种层中的至少一个的第二层。 公开了一种制造具有层压薄膜结构的这种传感器以实现大TCR的方法。 层压薄膜中各层的厚度在几十纳米的范围内。 公开了故意优化的多层薄膜结构和在升高的温度下制备这种薄膜的组合以获得大的TCR。

    Write head with reduced side to trailing shield spacing

    公开(公告)号:US10699733B1

    公开(公告)日:2020-06-30

    申请号:US16174551

    申请日:2018-10-30

    摘要: A write head including a bearing surface and a write pole having a front surface that forms a portion of the bearing surface. The front surface has a leading edge, a trailing edge and side edges connecting the leading and trailing edges. The write head also includes side shields proximate to the side edges of the write pole, and a trailing shield over the write pole and the side shields. A trailing shield-write pole gap is present between the trailing edge and the trailing shield, and a trailing shield-side shield gap is present between the trailing shield and the side shields. The trailing shield-shield shield gap is substantially less than the trailing shield-write pole gap.

    Selective data writer coil
    9.
    发明授权

    公开(公告)号:US10134428B1

    公开(公告)日:2018-11-20

    申请号:US15797668

    申请日:2017-10-30

    IPC分类号: G11B5/09 G11B5/17 G11B5/31

    摘要: A data writer may be constructed and operated as part of a data storage device. The data writer can be positioned proximal a data storage medium. The data writer may have a write pole positioned adjacent a writer coil with the writer coil having a plurality of turns. A controller that is connected to each turn can be adapted to selectively activate less than all the coil turns in response to the data writer being positioned over a first portion of a data storage medium and selectively activate all of the coil turns in response to the data writer being positioned over a second portion of the data storage medium.

    Magnetic storage device readers
    10.
    发明授权

    公开(公告)号:US09818445B2

    公开(公告)日:2017-11-14

    申请号:US14993694

    申请日:2016-01-12

    IPC分类号: G11B20/12

    摘要: Implementations described and claimed herein includes a storage device comprising a plurality of readers, including a first subset of readers configured to read a first subset of tracks and a second subset of readers configured to read a second subset of tracks, the first subset of tracks being wider than the second subset of tracks. In another implementation, the readers in the first subset of readers are wider than the readers in the second subset of readers. The wider readers may be configured to recover servo information and the narrow readers may be configured to recover data information. The storage devices may include two-dimensional magnetic recording, conventional perpendicular magnetic recording, shingled magnetic recording, multi-sensor magnetic recording, and interlaced magnetic recording.