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    Write head with reduced side to trailing shield spacing
    1.
    发明授权
    Write head with reduced side to trailing shield spacing 有权

    公开(公告)号：US10699733B1

    公开(公告)日：2020-06-30

    申请号：US16174551

    申请日：2018-10-30

    Applicant: Seagate Technology LLC

    Inventor： Kirill A. Rivkin ,  Wei Tian ,  XiaoHong Zhang ,  Yi Liu

    IPC: G11B5/127 ,  H04R31/00 ,  G11B5/31 ,  G11B5/11 ,  G11B5/23

    Abstract: A write head including a bearing surface and a write pole having a front surface that forms a portion of the bearing surface. The front surface has a leading edge, a trailing edge and side edges connecting the leading and trailing edges. The write head also includes side shields proximate to the side edges of the write pole, and a trailing shield over the write pole and the side shields. A trailing shield-write pole gap is present between the trailing edge and the trailing shield, and a trailing shield-side shield gap is present between the trailing shield and the side shields. The trailing shield-shield shield gap is substantially less than the trailing shield-write pole gap.

    Selective data writer coil
    2.
    发明授权
    Selective data writer coil 有权

    公开(公告)号：US10134428B1

    公开(公告)日：2018-11-20

    申请号：US15797668

    申请日：2017-10-30

    Applicant: Seagate Technology LLC

    Inventor： Kirill A. Rivkin ,  JianHua Xue ,  Wei Tian ,  Lei Lu ,  Jian Zhong

    IPC: G11B5/09 ,  G11B5/17 ,  G11B5/31

    Abstract: A data writer may be constructed and operated as part of a data storage device. The data writer can be positioned proximal a data storage medium. The data writer may have a write pole positioned adjacent a writer coil with the writer coil having a plurality of turns. A controller that is connected to each turn can be adapted to selectively activate less than all the coil turns in response to the data writer being positioned over a first portion of a data storage medium and selectively activate all of the coil turns in response to the data writer being positioned over a second portion of the data storage medium.

    Magnetic storage device readers
    3.
    发明授权
    Magnetic storage device readers 有权

    公开(公告)号：US09818445B2

    公开(公告)日：2017-11-14

    申请号：US14993694

    申请日：2016-01-12

    Applicant: Seagate Technology LLC

    Inventor： Wenzhong Zhu ,  Mehmet F. Erden ,  Kenneth A. Haapala ,  Wei Tian ,  Edward Gage

    IPC: G11B20/12

    CPC classification number: G11B20/1217 ,  G11B5/012 ,  G11B5/1278 ,  G11B5/4813 ,  G11B5/4886 ,  G11B20/10009 ,  G11B2020/1238

    Abstract: Implementations described and claimed herein includes a storage device comprising a plurality of readers, including a first subset of readers configured to read a first subset of tracks and a second subset of readers configured to read a second subset of tracks, the first subset of tracks being wider than the second subset of tracks. In another implementation, the readers in the first subset of readers are wider than the readers in the second subset of readers. The wider readers may be configured to recover servo information and the narrow readers may be configured to recover data information. The storage devices may include two-dimensional magnetic recording, conventional perpendicular magnetic recording, shingled magnetic recording, multi-sensor magnetic recording, and interlaced magnetic recording.

    Data writer side shield with cantilevered protrusions
    5.
    发明授权
    Data writer side shield with cantilevered protrusions 有权
    数据写入器侧屏蔽，悬臂突起

    公开(公告)号：US09396741B1

    公开(公告)日：2016-07-19

    申请号：US14839558

    申请日：2015-08-28

    Applicant: Seagate Technology LLC

    Inventor： Wei Tian ,  XiaoHong Zhang ,  Joseph M. Mundenar ,  Dong Lin ,  Jia Sun

    IPC: G11B5/11 ,  G11B5/31

    CPC classification number: G11B5/315 ,  G11B5/3163

    Abstract: A data writer can be fabricated by constructing a write pole to continuously extend from an air bearing surface prior to depositing a first gap layer to continuously extend from the ABS in contact with a first write pole sidewall. A first side shield protrusion can then be formed on the air bearing surface to be separated from the write pole by the first gap layer. A second gap layer may be deposited to continuously extend from the first side shield protrusion along the first write pole sidewall to define a dielectric region on which a second side shield protrusion is formed with the second side shield protrusion separated from the write pole by the first and second gap layers and the first and second side shield protrusions each cantilevered from a common side shield body.

    Abstract translation: 数据写入器可以在沉积第一间隙层之前从空气轴承表面构造一个连续地从第一写入磁极侧壁接触的ABS连续地延伸的写极制造。 然后可以在空气轴承表面上形成第一侧面屏蔽突起，以通过第一间隙层与写入极分离。 可以沉积第二间隙层，以从第一侧屏蔽突起沿着第一写磁极侧壁连续延伸，以限定形成第二侧屏蔽突起的电介质区域，其中第二侧屏蔽突起与写极分离第一侧屏蔽突起 和第二间隙层以及从公共侧屏蔽体悬臂的第一和第二侧面屏蔽突起。

    Write gap structure for a magnetic recording head
    6.
    发明授权
    Write gap structure for a magnetic recording head 有权
    写入磁记录头的间隙结构

    公开(公告)号：US09318131B2

    公开(公告)日：2016-04-19

    申请号：US13930776

    申请日：2013-06-28

    Applicant: Seagate Technology LLC

    Inventor： Wei Tian ,  Huaqing Yin ,  Yan Dong ,  Joseph M. Mundenar ,  Jianhua Xue

    IPC: G11B5/31 ,  G11B5/23

    CPC classification number: G11B5/23 ,  G11B5/232 ,  G11B5/3116

    Abstract: The present application relates to a write gap structure for a magnetic recording head. In illustrated embodiments, the write gap structure includes multiple write gap segments along a beveled pole tip surface between a top edge and a bottom edge of the beveled pole tip surface to provide a narrow write gap proximate to the air bearing surface and a larger write gap behind the air bearing surface. In illustrated embodiments, the narrow write gap segment is formed between the beveled pole tip surface and a lower back surface of front shield and the larger write gap is formed between the beveled pole tip surface and an upper back surface of the front shield.

    Abstract translation: 本申请涉及用于磁记录头的写间隙结构。 在示出的实施例中，写间隙结构包括沿着倾斜磁极尖端表面的顶部边缘和底部边缘之间的斜面磁极尖端表面的多个写入间隙段，以提供靠近空气轴承表面的窄写入间隙和更大的写入间隙 在空气轴承表面后面。 在图示的实施例中，狭窄的写入间隙段形成在斜面极尖表面和前屏蔽的下后表面之间，并且较大的写入间隙形成在斜面极尖表面与前屏蔽的上后表面之间。

    Write head having non-magnetic write gap seed layer, and method
    8.
    发明授权
    Write head having non-magnetic write gap seed layer, and method 有权
    具有非磁性写入间隙种子层的写头和方法

    公开(公告)号：US09147407B2

    公开(公告)日：2015-09-29

    申请号：US13797165

    申请日：2013-03-12

    Applicant: Seagate Technology LLC

    Inventor： Wei Tian ,  Venkateswara Rao Inturi ,  Doug Lin ,  Huaqing Yin ,  Jiaoming Qiu

    IPC: G11B5/23 ,  G11B5/235 ,  G11B5/187 ,  G11B5/33 ,  G11B5/127 ,  G11B5/31

    CPC classification number: G11B5/235 ,  G11B5/1278 ,  G11B5/187 ,  G11B5/23 ,  G11B5/232 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163 ,  G11B5/332 ,  G11B5/6082 ,  Y10T428/115 ,  Y10T428/1193

    Abstract: In accordance with one embodiment, an apparatus includes a main pole layer of magnetic material; a second layer of magnetic material; a first gap layer of non-magnetic material disposed between the main pole layer and the second layer of magnetic material; a second gap layer of non-magnetic material disposed between the main pole layer and the second layer of magnetic material; wherein the second gap layer of non-magnetic material is disposed directly adjacent to the second layer of magnetic material. In accordance with one embodiment, this allows the gap to serve as a non-magnetic seed for the second layer of magnetic material. A method of manufacturing such a device is also described.

    Abstract translation: 根据一个实施例，一种装置包括磁性材料的主极层; 第二层磁性材料; 设置在所述主极层和所述第二磁性材料层之间的非磁性材料的第一间隙层; 设置在主极层和第二磁性材料层之间的非磁性材料的第二间隙层; 其中所述非磁性材料的所述第二间隙层直接邻近所述第二磁性材料层设置。 根据一个实施例，这允许间隙用作第二层磁性材料的非磁性种子。 还描述了制造这种装置的方法。

    Using Different Programming Modes to Store Data to a Memory Cell
    9.
    发明申请
    Using Different Programming Modes to Store Data to a Memory Cell 有权
    使用不同的编程模式将数据存储到存储单元

    公开(公告)号：US20150179268A1

    公开(公告)日：2015-06-25

    申请号：US14136708

    申请日：2013-12-20

    Applicant: Seagate Technology LLC

    Inventor： YoungPil Kim ,  Rodney Virgil Bowman ,  Dadi Setiadi ,  Wei Tian

    IPC: G11C16/14 ,  G11C13/00

    CPC classification number: G11C16/14 ,  G11C11/56 ,  G11C11/5628 ,  G11C13/004 ,  G11C13/0069 ,  G11C16/10 ,  G11C16/3495 ,  G11C2211/5641

    Abstract: Method and apparatus for managing data in a memory, such as a flash memory array. In accordance with some embodiments, a memory cell is provided with a plurality of available programming states to accommodate multi-level cell (MLC) programming. A control circuit stores a single bit logical value to the memory cell using single level cell (SLC) programming to provide a first read margin between first and second available programming states. The control circuit subsequently stores a single bit logical value to the memory cell using virtual multi-level cell (VMLC) programming to provide a larger, second read margin between the first available programming state and a third available programming state.

    Abstract translation: 用于管理诸如闪存阵列的存储器中的数据的方法和装置。 根据一些实施例，存储器单元被提供有多个可用的编程状态以适应多级单元（MLC）编程。 控制电路使用单电平单元（SLC）编程将单个位逻辑值存储到存储器单元，以在第一和第二可用编程状态之间提供第一读取裕度。 控制电路随后使用虚拟多电平单元（VMLC）编程将单个位逻辑值存储到存储器单元，以在第一可用编程状态和第三可用编程状态之间提供较大的第二读取余量。

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