利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

30 条记录 (耗时 0.041 秒)

    SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
    2.
    发明申请
    SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS 有权
    含硫酸钠聚合物，耐腐蚀组合物和图案处理

    公开(公告)号：US20090269696A1

    公开(公告)日：2009-10-29

    申请号：US12428933

    申请日：2009-04-23

    申请人： Youichi OHSAWA ,  Jun HATAKEYAMA ,  Seiichiro TACHIBANA ,  Takeshi KINSHO

    发明人： Youichi OHSAWA ,  Jun HATAKEYAMA ,  Seiichiro TACHIBANA ,  Takeshi KINSHO

    IPC分类号： G03F7/20 ,  C08F214/18 ,  G03F7/004

    CPC分类号： G03F7/0045 ,  C08F220/18 ,  C08F220/28 ,  C08F220/30 ,  C08F220/38 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/2041 ,  Y10S430/143 ,  Y10S430/167

    摘要： A polymer comprising recurring units having formulae (1), (2) and (3) is provided as well as a chemically amplified resist composition comprising the same. R1 is H, F, CH3 or CF3, Rf is H, F, CF3 or C2F5, A is an optionally fluorine or oxygen-substituted divalent organic group, R2, R3 and R4 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl, or may form a ring with the sulfur atom, N=0-2, R8 is H or alkyl, B is a single bond or optionally oxygen-substituted divalent organic group, a=0-3, b=1-3, and X is an acid labile group. The polymer generates a strong sulfonic acid which provides for effective cleavage of acid labile groups in a chemically amplified resist composition.

    摘要翻译： 提供了包含具有式（1），（2）和（3）的重复单元的聚合物以及包含其的化学放大抗蚀剂组合物。 R 1是H，F，CH 3或CF 3，R f是H，F，CF 3或C 2 F 5，A是任选氟或氧取代的二价有机基团，R 2，R 3和R 4是烷基，烯基，氧代烷基，芳基，芳烷基或芳氧基烷基 或者可以与硫原子形成环，N = O-2，R 8是H或烷基，B是单键或任选的氧取代的二价有机基团，a = 0-3，b = 1-3，和 X是酸不稳定组。 该聚合物产生强的磺酸，其提供化学增强抗蚀剂组合物中酸不稳定基团的有效切割。

    Lactone-containing compound, polymer, resist composition, and patterning process
    4.
    发明申请
    Lactone-containing compound, polymer, resist composition, and patterning process 有权
    含内酯的化合物，聚合物，抗蚀剂组合物和图案化工艺

    公开(公告)号：US20080026331A1

    公开(公告)日：2008-01-31

    申请号：US11878759

    申请日：2007-07-26

    申请人： Koji HASEGAWA ,  Tsunehiro NISHI ,  Takeshi KINSHO ,  Seiichiro TACHIBANA

    发明人： Koji HASEGAWA ,  Tsunehiro NISHI ,  Takeshi KINSHO ,  Seiichiro TACHIBANA

    IPC分类号： C08F28/06 ,  C08F24/00 ,  G03C5/00

    CPC分类号： G03F7/0397 ,  C08F220/18 ,  C08F220/28 ,  G03F7/0046 ,  Y10S430/111

    摘要： Lactone-containing compounds having formula (1) are novel wherein R1 is H, F, methyl or trifluoromethyl, R2 and R3 are monovalent hydrocarbon groups, or R2 and R3 may together form an aliphatic hydrocarbon ring, R4 is H or CO2R5, R5 is a monovalent hydrocarbon group, W is CH2, O or S, and k1 is 0 or 1. They are useful as monomers to produce polymers which are transparent to radiation≦500 nm. Radiation-sensitive resist compositions comprising the polymers as base resin exhibit excellent properties including resolution, pattern edge roughness, pattern density dependency and exposure margin.

    摘要翻译： 含有式（1）的含内酯的化合物是新的，其中R 1是H，F，甲基或三氟甲基，R 2和R 3是 一价烃基或R 2和R 3可以一起形成脂族烃环，R 4是H或CO 2， R 5，R 5是一价烃基，W是CH 2，O或S，和k 1 它们可用作单体以产生对辐射<= 500nm透明的聚合物。 包含作为基础树脂的聚合物的辐射敏感性抗蚀剂组合物表现出优异的性能，包括分辨率，图案边缘粗糙度，图案密度依赖性和曝光余量。

    POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
    6.
    发明申请
    POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS 审中-公开
    积极的组合和绘图过程

    公开(公告)号：US20100062372A1

    公开(公告)日：2010-03-11

    申请号：US12553410

    申请日：2009-09-03

    申请人： Tsunehiro NISHI ,  Takeshi KINSHO ,  Masaki OHASHI ,  Koji HASEGAWA ,  Masashi IIO

    发明人： Tsunehiro NISHI ,  Takeshi KINSHO ,  Masaki OHASHI ,  Koji HASEGAWA ,  Masashi IIO

    IPC分类号： G03F7/004 ,  G03F7/20

    CPC分类号： G03F7/2041 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397

    摘要： A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising recurring units containing a non-leaving hydroxyl group represented by at least one of formulae (1-1) to (1-3) wherein R1 is H, methyl or trifluoromethyl, X is a single bond or methylene, Y is hydroxyl or hydroxymethyl, and m is 0, 1 or 2. The composition is improved in resolution when processed by lithography.

    摘要翻译： 正型抗蚀剂组合物包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）酸产生剂。 树脂（A）是包含由式（1-1）〜（1-3）中至少一个表示的非离去羟基的重复单元的聚合物，其中R 1是H，甲基或三氟甲基，X是单键 或亚甲基，Y是羟基或羟甲基，m是0,1或2.当通过光刻处理时，组合物的分辨率提高。

    MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS
    7.
    发明申请
    MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS 有权
    单体，耐性组合物和方法

    公开(公告)号：US20090226843A1

    公开(公告)日：2009-09-10

    申请号：US12398483

    申请日：2009-03-05

    申请人： Jun HATAKEYAMA ,  Takeshi KINSHO ,  Masaki OHASHI ,  Kazuhiro KATAYAMA

    发明人： Jun HATAKEYAMA ,  Takeshi KINSHO ,  Masaki OHASHI ,  Kazuhiro KATAYAMA

    IPC分类号： G03F7/20 ,  G03F7/004 ,  C08F120/10

    CPC分类号： G03F7/40 ,  G03F7/0046 ,  G03F7/0397

    摘要： A pattern is formed by applying a positive resist composition comprising a polymer comprising hydroxyalkylnaphthalene-bearing recurring units and acid labile group-bearing recurring units onto a substrate to form a resist film, heat treating and exposing the resist film to radiation, heat treating and developing the resist film with a developer to form a first pattern, and causing the resist film to crosslink and cure with the aid of heat or of acid and heat. A second pattern is then formed in the space area of the first pattern. The double patterning process reduces the pitch between patterns to one half.

    摘要翻译： 通过将包含含有羟烷基萘的重复单元和含酸不稳定基团的重复单元的聚合物的正性抗蚀剂组合物应用到基材上以形成抗蚀剂膜，将抗蚀剂膜热处理和曝光以进行辐射，热处理和显影而形成图案 所述抗蚀剂膜具有显影剂以形成第一图案，并且使得所述抗蚀剂膜在热或酸和热的帮助下交联和固化。 然后在第一图案的空间区域中形成第二图案。 双重图案化工艺将图案之间的间距缩小到一半。

    NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS
    8.
    发明申请
    NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS 有权
    新型磺酸盐，聚合物，聚合物的生产方法，耐腐蚀组合物和方法

    公开(公告)号：US20110189607A1

    公开(公告)日：2011-08-04

    申请号：US13013506

    申请日：2011-01-25

    申请人： Masaki OHASHI ,  Satoshi WATANABE ,  Youichi OHSAWA ,  Keiichi MASUNAGA ,  Takeshi KINSHO

    发明人： Masaki OHASHI ,  Satoshi WATANABE ,  Youichi OHSAWA ,  Keiichi MASUNAGA ,  Takeshi KINSHO

    IPC分类号： G03F7/004 ,  G03F7/20 ,  C07C69/54 ,  C08F220/38

    CPC分类号： C07C69/54 ,  C08F220/38 ,  G03F7/004 ,  G03F7/20

    摘要： There is disclosed a sulfonium salt represented by the following general formula (1). In the formula, X and Y each represents a group having a polymerizable functional group; Z represents a divalent hydrocarbon group having 1 to 33 carbon atoms optionally containing a hetero atom; R1 represents a divalent hydrocarbon group having 1 to 36 carbon atoms optionally containing a hetero atom; and R2 and R3 each represents a monovalent hydrocarbon group having 1 to 30 carbon atoms optionally containing a hetero atom or R2 and R3 may be bonded with each other to form a ring together with a sulfur atom in the formula. There can be provided a sulfonium salt usable as a resist composition providing high resolution and excellent in LER in photolithography using a high energy beam such as an ArF excimer laser, an EUV light and an electron beam as a light source, a polymer obtained from the sulfonium salt, a resist composition containing the polymer and a patterning process using the resist composition.

    摘要翻译： 公开了由以下通式（1）表示的锍盐。 在该式中，X和Y各自表示具有聚合性官能团的基团， Z表示任选含有杂原子的碳原子数1〜33的二价烃基; R1表示任选含有杂原子的碳原子数1〜36的二价烃基; R 2和R 3各自表示可以含有杂原子的具有1〜30个碳原子的一价烃基，或者，R 2和R 3可以相互结合，与式中的硫原子一起形成环。 可以提供可用作抗蚀剂组合物的锍盐，其使用诸如ArF准分子激光器，EUV光和电子束作为光源的高能束在光刻中提供高分辨率和优异的LER，从 锍盐，含有聚合物的抗蚀剂组合物和使用该抗蚀剂组合物的图案化工艺。